Untitled
Abstract: No abstract text available
Text: User's Guide SLUU669 – January 2012 QFN-Packaged bq24165/166/167EVM-720 Evaluation Modules The bq24165/166/167EVM-720 evaluation module is a complete charger module for evaluating a compact, flexible, high-efficiency, USB-friendly, switch-mode, charge-management solution for single-cell,
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SLUU669
bq24165/166/167EVM-720
bq2416x
bq24165/166/167EVM
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Mitsumi D353F3
Abstract: NM2200 D353F3 NM2200 C-A TX34D62VC1CA BTP-1931 721TX GE SCR Manual Automatic Battery Charger troubleshooting and repair lcd monitors lcd monitor troubleshooting and repair
Text: 720.book Page I Tuesday, November 23, 1999 2:29 AM Travel Mate 720 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.42C01.001 DOC. NO.: SG295-9803A PRINTED IN TAIWAN
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42C01
SG295-9803A
TM720
TM720
42C39
Mitsumi D353F3
NM2200
D353F3
NM2200 C-A
TX34D62VC1CA
BTP-1931
721TX
GE SCR Manual Automatic Battery Charger
troubleshooting and repair lcd monitors
lcd monitor troubleshooting and repair
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a1717
Abstract: STK611-720-E
Text: Ordering number : EN*A1717 Thick-Film Hybrid IC STK611-720-E Fan 3-phase Inverter Motor Drive Inverter Hybrid IC Overview The STK611-720-E is an inverter power hybrid IC for use in 3-phase fan-motor applications and contains power stage, pre-driver, and protection circuits.
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A1717
STK611-720-E
STK611-720-E
A1717-7/7
a1717
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sot223 weight
Abstract: No abstract text available
Text: BF 720, BF 722 High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case
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OT-223
UL94V-0
25width
sot223 weight
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MARKING 720
Abstract: P008B BF720 BF721
Text: BF720 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BF720 720 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS BF721
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BF720
OT-223
BF721
OT-223
MARKING 720
P008B
BF720
BF721
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transistor J132
Abstract: 1090 MS2475 J132
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2475 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • DESIGNED FOR HIGH POWER PULSED IFF 720 WATTS (min.) IFF 1030 or 1090 MHz
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MS2475
MS2475
MSC0937A
transistor J132
1090
J132
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c code for convolution
Abstract: powersi Kramer vhdl code for lte channel coding Kuznetsov PP1052 linear convolution advantages 77KB transistor a1m
Text: DesignCon 2006 Fast Time-Domain Simulation of 200+ Port S-Parameter Package Models Vadim Heyfitch, Altera Corporation [email protected], 408 544-6914 (Vladimir Dmitriev-Zdorov, Mentor Graphics Corporation) ([email protected], (720) 494-1196)
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BF marking code
Abstract: MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110
Text: NPN Silicon High-Voltage Transistors ● ● ● ● ● BF 720 BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP
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Q62702-F1238
Q62702-F1306
OT-223
BF marking code
MARKING CODE 720
720 marking
marking 722
Q62702-F1238
Q62702-F1306
TS110
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IC 723
Abstract: 723 ic IC 1 723 uA 723 723DC mA 723 BF Marking pdf application of IC 723 Q62702-F1239 Q62702-F1309
Text: PNP Silicon High-Voltage Transistors ● ● ● ● ● BF 721 BF 723 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 720/722 NPN
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Q62702-F1239
Q62702-F1309
OT-223
IC 723
723 ic
IC 1 723
uA 723
723DC
mA 723
BF Marking
pdf application of IC 723
Q62702-F1239
Q62702-F1309
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j327 transistor
Abstract: j327 J334 transistor
Text: Freescale Semiconductor Technical Data Document Number: MMRF1017N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1017NR3 This 80 W RF power LDMOS transistor is designed for wideband RF power amplifiers covering the frequency range of 720 to 960 MHz.
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MMRF1017NR3
j327 transistor
j327
J334 transistor
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j327
Abstract: j327 transistor AFT09S282 transistor j326 J161 mosfet transistor j334 AFT09S282NR3 ATC600F4R7BT250XT AFT09S282N
Text: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
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AFT09S282N
AFT09S282NR3
AFT09S282N
j327
j327 transistor
AFT09S282
transistor j326
J161 mosfet transistor
j334
AFT09S282NR3
ATC600F4R7BT250XT
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Untitled
Abstract: No abstract text available
Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3565
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
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AFT09S282N
AFT09S282NR3
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K4207
Abstract: 2SK4207 SC-65
Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
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2SK4207
K4207
2SK4207
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3798
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Abstract: No abstract text available
Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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Untitled
Abstract: No abstract text available
Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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B 722 P
Abstract: f1306
Text: NPN Silicon High-Voltage Transistors BF 720; BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP Type M arking
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F1238
Q62702
F1306
OT-223
OT-223
BF720
B 722 P
f1306
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ABE 721
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP
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Q62702-F1238
Q62702-F1306
OT-223
A23SbGS
ABE 721
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MARKING BF
Abstract: No abstract text available
Text: SIEM ENS PNP Silicon High-Voltage Transistors BF 721 BF723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN
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BF723
Q62702-F1239
Q62702-F1309
OT-223
EHP00555
MARKING BF
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B 722 P
Abstract: BB 722 DC DC BB 722
Text: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP
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BF722
Q62702-F1238
Q62702-F1306
OT-223
B 722 P
BB 722 DC DC
BB 722
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon High-Voltage Transistors BF 721 BF 723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN
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Q62702-F1239
Q62702-F1309
OT-223
flE35b05
D1E17DD
EHP0055Ã
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Untitled
Abstract: No abstract text available
Text: 3SE D • 0231*320 G01b7b2 7 « S I P NPN Silicon High-Voltage Transistors BF 720; BF 722 _SIEMENS/ SPCL-, SEMICONDS T - 33- OS' Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage
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G01b7b2
12-mm
Q62702
F1238
OT-223
F1306
BF720
flS3b32Q
Q01b7bS
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P 721 g f
Abstract: IC 723 H
Text: PNP Silicon High-Voltage Transistors BF 721; BF 723 Suitable for video output stages in TV sets and switching pow er supplies High breakdow n voltage Low collecto r -em itter saturation voltage Low capacitance C om plem entary types: BF 720/722 NPN T ype
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Q62702
F1239
F1309
OT-223
OT-223
P 721 g f
IC 723 H
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