7912
Abstract: configuration of IC 7912 ST 7912 STB7102 4256 stmicroelectronics 1011 sot323 TA 8607
Text: STB7102 0.5/2.5 GHz LO BUFFER AMPLIFIER PRELIMINARY DATA • OPERATING FREQUENCY 500-2500MHz • LOW CURRENT CONSUMPTION 4mA @ 2.7V • EXCELLENT ISOLATION (43dB @ 850MHz) • INPUT AND OUTPUT RETURN LOSS > 15dB • ULTRA MINIATURE SOT323-6L PACKAGE (1.15 x 1.8 x 0.8 mm)
|
Original
|
PDF
|
STB7102
500-2500MHz
850MHz)
OT323-6L
OT323-6L
STB7102,
STB7102
OT143
7912
configuration of IC 7912
ST 7912
4256 stmicroelectronics
1011 sot323
TA 8607
|
mbrf1060ctl
Abstract: No abstract text available
Text: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1
|
Original
|
PDF
|
OD-123
BAT54W
OT-323
BAT54WS
BAT54A
OT-23
BAT54C
BAT54S
mbrf1060ctl
|
transistors BC 543
Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
|
Original
|
PDF
|
OT-23
OT-363
OT-143
transistors BC 543
183W
Diode BAW 62
BCR191P
SOT23 BCV 27
TRANSISTOR BC 530
sot-23 p1
diode S6 78A
mmic amplifier sot-89 p4
diode sot 143 s5
|
Untitled
Abstract: No abstract text available
Text: MMBD4448W Surface Mount Switching Diodes SOT-323 Features Fast switching speed. High conductance. For general purpose switching applications. Surface mount package ideally suited for automatic insertion. Dimensions in inches and millimeters Applications
|
Original
|
PDF
|
MMBD4448W
OT-323
MMBD4448W
100mA
150mA
|
2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
|
Original
|
PDF
|
O-92d
2907A PNP bipolar transistors
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 450 pnp
diode S6 78A
transistors bf 517
BFG sot89
BC 327 SOT 23
BAS20 SOT23
DIODE TA 70/04
bcp 846
|
S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
|
Original
|
PDF
|
25-RF-BIPOLAR-Transistors.
45-RF-BIPOLAR-Transistors.
OT-23
OT-143
S4 78a DIODE schottky
diode S6 78A
BC 148 TRANSISTOR DATASHEET
transistors BC 543
TRANSISTOR BC 158
BC 158 is npn or pnp
68W npn
TRANSISTOR BC
s6 78a
baw 92
|
marking code PB surface mount diode
Abstract: MMBD4448W 720 SOT323
Text: BL Galaxy Electrical Production specification Surface Mount Switching Diode MMBD4448W FEATURES Pb z Fast switching speed. z High conductance. z For general purpose switching applications. z Surface mount package ideally suited Lead-free for automatic insertion.
|
Original
|
PDF
|
MMBD4448W
OT-323
BL/SSSDF021
marking code PB surface mount diode
MMBD4448W
720 SOT323
|
44S DIODE
Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
Text: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065
|
Original
|
PDF
|
0-04W
0-05W
0-06W
Q62702-A1065
Q62702-A1066
Q62702-A1067
OT-323
44S DIODE
Q62702-A1066
marking 45s
marking C1
MARKING 44s
Q62702-A1065
Q62702-A1067
cu marking code diode
DIODE BAS JS v
Marking on semiconductor 720
|
Untitled
Abstract: No abstract text available
Text: MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.25 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min.
|
Original
|
PDF
|
MMBD4448W
OT-323
OT-323
J-STD-020D
2002/95/EC
100mA
150mA
Jun-2009,
KSYR79
|
2907A PNP bipolar transistors
Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
|
Original
|
PDF
|
OT-23
OT-143
2907A PNP bipolar transistors
diode S6 78A
MMIC SOT 363
s1140
DIODE TA 70/04
2907A PNP bipolar transistors datasheet
Diode BAW 62
TRANSISTOR BC 158
baw 92
68W SOT
|
Untitled
Abstract: No abstract text available
Text: MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.25 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min.
|
Original
|
PDF
|
MMBD4448W
OT-323
OT-323
J-STD-020D
2002/95/EC
|
J-STD-020D
Abstract: MMBD4448W
Text: MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.25 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min.
|
Original
|
PDF
|
MMBD4448W
OT-323
OT-323
J-STD-020D
2002/95/EC
J-STD-020D
MMBD4448W
|
Untitled
Abstract: No abstract text available
Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and
|
Original
|
PDF
|
540ESD
540ESD
BFP540ESD
460L3
BFR460L3
434MHz
BFP460
360L3
340L3
|
BC850
Abstract: bc849 marking code P
Text: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-323 1: EMITTER 2: BASE 3: COLLECTOR
|
Original
|
PDF
|
BC846/BC847/BC848/BC849/BC850
BC856
BC860
OT-323
BC846
BC847
BC850
BC848
BC849
marking code P
|
|
|
BC846AW
Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W
Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2011-07-07 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm]
|
Original
|
PDF
|
BC846W
BC849W
OT-323
UL94V-0
BC847W
BC848W
BC846AW
BC846W
BC847AW
BC847W
BC848W
BC849W
BC856W
BC859W
|
BC846AW
Abstract: BC846W BC847AW BC847W BC848W BC849W BC856W BC859W BC849B
Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1 ±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]
|
Original
|
PDF
|
BC846W
BC849W
OT-323
UL94V-0
BC847W
BC848W
BC846AW
BC846W
BC847AW
BC847W
BC848W
BC849W
BC856W
BC859W
BC849B
|
Untitled
Abstract: No abstract text available
Text: BC846W . BC849W BC846W . BC849W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-27 2 ±0.1 0.3 1±0.1 1 2.1 Type Code 1.25±0.1 ±0.1 3 2 1.3 Dimensions - Maße [mm]
|
Original
|
PDF
|
BC846W
BC849W
OT-323
UL94V-0
BC847W
BC848W
|
SSF1320N
Abstract: MosFET
Text: SSF1320N 2A , 20V , RDS ON 58 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low
|
Original
|
PDF
|
SSF1320N
OT-323
OT-323
28-Aug-2012
SSF1320N
MosFET
|
VSO05561
Abstract: No abstract text available
Text: BAS 40W. Silicon Schottky Diode 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40-04W BAS 40-05W BAS 40-06W 3 3 3 1 2 1 2 EHA07005 1 VSO05561 2 EHA07006 EHA07004
|
Original
|
PDF
|
0-04W
0-05W
0-06W
VSO05561
EHA07005
EHA07006
EHA07004
OT-323
VSO05561
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BC846-BC850 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 … BC860 ORDERING INFORMATION Ordering Number Lead Free
|
Original
|
PDF
|
BC846-BC850
BC856
BC860
BC846L-x-AE3-R
BC846G-x-AE3-R
BC847L-x-AE3-R
BC847G-x-AE3-R
BC848L-x-AE3-R
BC848G-x-AE3-R
BC849L-x-AE3-R
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W
|
OCR Scan
|
PDF
|
10kii,
47kii)
Q62702-C2280
OT-323
300ns;
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • C ircuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code Marking Package^ tape and reel
|
OCR Scan
|
PDF
|
0-04W
0-05W
0-06W
2702-A
OT-323
EHD07168
EHD07169
|
diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
|
OCR Scan
|
PDF
|
O-92tl
O-92d
diode S6 78A
TRANSISTOR PNP BA RT SOT 89
mmic CEA SOT363
32N45
transistor 6bw
TRANSISTOR BC 545
BF1012S
6bw sot-23
up 6103 s8
6bw 12 transistor
|
a2 marking
Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065
|
OCR Scan
|
PDF
|
Q62702-A1065
Q62702-A1066
Q62702-A1067
0-04W
0-05W
0-06W
OT-323
EHD07I67
a2 marking
Marking Code to on semiconductor 720
|