Untitled
Abstract: No abstract text available
Text: 2.92mm Male to 2.92mm Female VNA Test Cable 72 Inch Length, RoHS TECHNICAL DATA SHEET PE321-72 2.92mm Male to 2.92mm Female VNA Test Cable 72 Inch Length, RoHS Configuration Connector 1 Connector 1 Specification Connector 2 Connector 2 Specification Cable Type
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PE321-72
MIL-STD-348
92mm-male-2
emale-vna-cable-cable-assembly-pe321-72-p
PE321-72
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Untitled
Abstract: No abstract text available
Text: 3.5mm Male to 3.5mm Female VNA Test Cable 72 Inch Length, RoHS TECHNICAL DATA SHEET PE317-72 3.5mm Male to 3.5mm Female VNA Test Cable 72 Inch Length, RoHS Configuration Connector 1 Connector 1 Specification Connector 2 Connector 2 Specification Cable Type
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PE317-72
MIL-STD-348
emale-vna-cable-cable-assembly-pe317-72-p
PE317-72
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Untitled
Abstract: No abstract text available
Text: 2.92mm Male to 2.92mm Male VNA Test Cable 72 Inch Length, RoHS TECHNICAL DATA SHEET PE319-72 2.92mm Male to 2.92mm Male VNA Test Cable 72 Inch Length, RoHS Configuration Connector 1 Connector 1 Specification Connector 2 Connector 2 Specification Cable Type
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PE319-72
MIL-STD-348
92mm-male-2
-male-vna-cable-cable-assembly-pe319-72-p
PE319-72
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Untitled
Abstract: No abstract text available
Text: 3.5mm Male to 3.5mm Male VNA Test Cable 72 Inch Length, RoHS TECHNICAL DATA SHEET PE315-72 3.5mm Male to 3.5mm Male VNA Test Cable 72 Inch Length, RoHS Configuration Connector 1 Connector 1 Specification Connector 2 Connector 2 Specification Cable Type 3.5mm Male
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PE315-72
MIL-STD-348
-male-vna-cable-cable-assembly-pe315-72-p
PE315-72
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ad8307 power meter
Abstract: AD8302 ad8307 transmit power control phase detector AD8302 "logarithmic amplifier" decibel meter design of multi section directional coupler AND8314 AD8314 Logarithmic Amplifier detector rf power
Text: MWnov072 10/31/02 4:04 PM Page 72 RF POWER MEASUREMENTS DESIGN Make Precise Base-Station Power Measurements m A highly integrated device with a pair of logarithmic amplifier detectors operating to approximately 3 GHz can be useful in making amplitude and phase measurements on two input signals.
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MWnov072
ad8307 power meter
AD8302
ad8307 transmit power control
phase detector AD8302
"logarithmic amplifier"
decibel meter
design of multi section directional coupler
AND8314
AD8314
Logarithmic Amplifier detector rf power
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DQ849
Abstract: No abstract text available
Text: MONOLITHIC AMPLIFIERS HIGH DIRECTIVITY 50Ω 0.5 to 5.9 GHz NEW! VNA All specifications at 25°C u MODEL NO. FREQ. GHz DC VOLTS (V) fL - fU GAIN, dB Typical 0.5 MAXIMUM POWER (dBm) over frequency, GHz 1.0 1.5 2.0 2.5 Min. at 2 GHz Output (1 dB Comp.) Typ.
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VNA-21
TB-186
TB-01
DQ849
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DQ849
Abstract: TB-186 VNA-21 VNA-22 VNA-23 VNA-25 VNA-28 XX211 72 vna
Text: MONOLITHIC AMPLIFIERS HIGH DIRECTIVITY 50Ω 0.5 to 5.9 GHz NEW! VNA All specifications at 25°C u MODEL NO. FREQ. GHz DC VOLTS (V) fL - fU GAIN, dB Typical 0.5 MAXIMUM POWER (dBm) over frequency, GHz 1.0 1.5 2.0 2.5 Min. at 2 GHz Output (1 dB Comp.) Typ.
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VNA-21
TB-01
TB-186
DQ849
TB-186
VNA-21
VNA-22
VNA-23
VNA-25
VNA-28
XX211
72 vna
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Untitled
Abstract: No abstract text available
Text: High Directivity VNA-22+ VNA-22 Monolithic Amplifier 50Ω 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power no damage 10 dBm Pin Connections • 3V & 5V operation
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800mW
VNA-22+
VNA-22
XX211
2002/95/EC)
PL-077)
VNA-22
100pF
M98898
ED-9810A/2
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Untitled
Abstract: No abstract text available
Text: y Spec. MITSUBISHI LSIs MH8V725AWZJ -5, -6 _ HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V725AWZJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8
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MH8V725AWZJ
8388608-word
72-bit
MIT-DS-0092-0
22/Oct
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Untitled
Abstract: No abstract text available
Text: y Spec. MITSUBISHI LSIs MH8V7245AZTJ -5, -6 _ HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245AZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8
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MH8V7245AZTJ
8388608-word
72-bit
MIT-DS-0047-2
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Untitled
Abstract: No abstract text available
Text: y Spec. MITSUBISHI LSIs MH8V725AZTJ -5, -6 _ HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V725AZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8
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MH8V725AZTJ
8388608-word
72-bit
MIT-DS-0079-2
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A49AN
Abstract: adq38 360ac In400I
Text: I =¥= =• = IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 16Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications
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168-Pin
16Mx64/72
PC100
66MHz
IBM13N16644HC
IBM13N16734HC
A49AN
adq38
360ac
In400I
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Untitled
Abstract: No abstract text available
Text: IBM13Q8739CC 8M x 72 Buffered SDRAM Module Features • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 8M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2* -10 j Units j ! MHz j ; ns jfcK j Clock Frequency 66 ; tcK2
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IBM13Q8739CC
200-Pin
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ADQ45
Abstract: AADQ44 13N4649
Text: Discontinued 12/38 » last order; 9/99 las! ship IBM13N4649JC IBM13N4739JC 4M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Mem ory Module • 4Mx64/72 Synchronous DRAM DIMM • Two speed sorts: • -360 for PC100 applications
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IBM13N4649JC
IBM13N4739JC
168-Pin
4Mx64/72
PC100
66MHz
ADQ45
AADQ44
13N4649
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Untitled
Abstract: No abstract text available
Text: y Spec. MITSUBISHI LSIs SSSÄ-SK* M H 1 6 V 7 2 5 B W J -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V725BWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard
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MH16V725BWJ
16777216-word
72-bit
MIT-DS-0236-0
27/Jul
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Untitled
Abstract: No abstract text available
Text: I = = = = ¥ = = = ’ = IB M 1 3 N 4 6 4 4 M C IB M 1 3 N 4 7 3 4 M C Preliminary 4M x 64/72 1 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Two speed sorts: • -360 for PC100 applications
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168-Pin
4Mx64/72
PC100
66MHz
IBM13N4644MC
IBM13N4734MC
19L7121
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM374S823BT PC100 SDRAM MODULE KMM374S823BT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823BT is a 8M bit x 72 Synchronous Performance range
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KMM374S823BT
PC100
KMM374S823BT
8Mx72
KMM374S823BT-G8
125MHz
400mil
KMM374S823BT-GH
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ADQ37
Abstract: No abstract text available
Text: I =¥= =• = IBM13N4644MC IBM13N4734MC Preliminary 4M x 64/72 1 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only
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168-Pin
4Mx64/72
PC100
66MHz
IBM13N4644MC
IBM13N4734MC
ADQ37
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Untitled
Abstract: No abstract text available
Text: IB M 1 3 Q 1 6 7 3 4 H C A 16M X 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Registered 8-Byte Dual In-line Memory Module • Automatic and controlled Precharge Commands • 16M -SDRAM CAS Latency: 2 -Burst Type: Sequential or Interleave
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200-Pin
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tea 9502
Abstract: Electronic Arrays Inc T3FL 9502c inverter /Invertron Vti
Text: V L S I TECHNOLOGY I NC 72 dË| T3flfl3M7 D D D 0 4 2 D 5 | p ^~~T-42-ll-09 % VGC SERIES ADVANCED 2-MICRON CMOS GATE ARRAY FAMILY Q FEATURES • 500,900,1200,1900,2400,3200, 4000,6000 and 8000 gates. • True 2-micion silicon gate CMOS technology • High performance—
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T-42-ll-09
VGC0500)
tea 9502
Electronic Arrays Inc
T3FL
9502c
inverter /Invertron Vti
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Untitled
Abstract: No abstract text available
Text: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 I -260 S-360 ; -360 i Units S I Device Latency 3 i I Clock Frequency
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IBM13M16734BCD
168-Pin
16Mx72
S-360
66/100MHz
PC100
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BFW11
Abstract: bfw11 equivalent BFW10 in drain resistance
Text: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential
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BFW10
BFW11
bb53T31
DQ3S77b
BFW11
bfw11 equivalent
BFW10 in drain resistance
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Nippon capacitors
Abstract: No abstract text available
Text: HB56UW3272ETL-5/6 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 8k Refresh, 2 Bank Module 36 pcs of 16M x 4 components HITACHI ADE-203-866 (Z) Preliminary, Rev. 0.0 Nov. 28, 1997 Description The HB56UW 3272ETL belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been
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HB56UW3272ETL-5/6
256MB
32-Mword
72-bit,
ADE-203-866
HB56UW
3272ETL
64-Mbit
Nippon capacitors
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TELTONE
Abstract: can obd
Text: 1-,. yg3K- TELTONE CORP 72 » E | 0^32445 DDDOflSS 7^ |~ D 7 ^ - 7 5 -<27 ' ¿ 7 M-958-02 PCM COMPATIBLE DTMF RECEIVER Features • • • • • • • The Teltone M-958-02 is a complete dial tone immune DTMF receiver with a fi-255 Law input. Simple clock and
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M-958-02
fi-255
120th
TELTONE
can obd
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