EN29GL128L
Abstract: BA262 EN29GL128 TC58FVM7T5B toshiba flash
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H L -70ZIP vs TOSHIBA Flash TC58FVM7T(B)5B-TG65 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. B, Issue Date: 2009/08/11
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EN29GL128H
-70ZIP
TC58FVM7T
5B-TG65
5B-TG65
-70ZIP
EN29GL128L
BA262
EN29GL128
TC58FVM7T5B
toshiba flash
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70ZI
Abstract: CY9C6264 CY9C6264-70PI CY9C6264-70SI FeRAM
Text: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features Description • 100% form-, fit-, and function-compatible with 8K x 8 micropower SRAM CY9C6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW max.
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CY9C6264
CY9C6264
70ZI
CY9C6264-70PI
CY9C6264-70SI
FeRAM
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external RAM ic 6264
Abstract: 6264 EPROM
Text: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.
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CY9C6264
CY6264
64-bytes
CY9C6264
external RAM ic 6264
6264 EPROM
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5525L
Abstract: CY62256 CY62256L CY62256LL
Text: 56 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and
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CY62256
32Kx8
CY62256
450-mil-wide
300-mil
600-mil
5525L
CY62256L
CY62256LL
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CY62256NLL-70PXC
Abstract: CY62256NLL-70SNXI 06511 CY62256NLL-70ZXI CY62256N
Text: CY62256N 256K 32K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High speed: 55 ns • Voltage range: 4.5V–5.5V operation
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CY62256N
CY62256N
CY62256NLL-70PXC
CY62256NLL-70SNXI
06511
CY62256NLL-70ZXI
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CY62256
Abstract: CY62256L CY62256LL
Text: fax id: 1068 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and
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CY62256
32Kx8
CY62256
450-mil-wide
300-mil
600-mil
CY62256L
CY62256LL
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TAA 7656
Abstract: cy62256nll-55snxi cy62256nll70snxc 70snxc CY62256NLL-70SNXC
Text: CY62256N 256K 32K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C • High speed: 55 ns and 70 ns • Voltage range: 4.5V–5.5V operation • Low active power (70 ns, LL version, Com’l and Ind’l)
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CY62256N
28-lead
600-mil)
300-mil)
28-lead
CY62256N
TAA 7656
cy62256nll-55snxi
cy62256nll70snxc
70snxc
CY62256NLL-70SNXC
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FeRAM
Abstract: CY62256 CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI 22758
Text: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby
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CY9C62256
CY62256)
28-pin
FeRAM
CY62256
CY9C62256
CY9C62256-70SI
CY9C62256-70SNC
CY9C62256-70SNI
22758
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CY62256NLL-70SNXI
Abstract: CY62256NL-70SNXI CY62256N
Text: CY62256N 256K 32K x 8 Static RAM Features Functional Description The CY62256N[1] is a high performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tristate drivers. This device has an
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CY62256N
CY62256N
CY62256NLL-70SNXI
CY62256NL-70SNXI
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Untitled
Abstract: No abstract text available
Text: CY9C62256 PRELIMINARY 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function - compatible with 32K x 8 micropower SRAM CY62256 . — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW (max.)
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CY9C62256
CY62256)
CY9C62256
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70ZI
Abstract: CY62256 CY9C62256 CY9C62256-70PI CY9C62256-70SI
Text: CY9C62256 PRELIMINARY 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function - compatible with 32K x 8, micropower SRAM CY62256 . — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW (max.)
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CY9C62256
CY62256)
CY9C62256
70ZI
CY62256
CY9C62256-70PI
CY9C62256-70SI
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CY62256LL-55SNxi
Abstract: CY62256LL-55SNx CY62256LL-70SNXC CY62256LL70SNXI CY62256LL-55SNXE CY62256LL-70SNXI CY62256LL-70PXC CY62256LL-70SNX CY62256L-70PXC cy62256l-70snxc
Text: CY62256 256K 32K x 8 Static RAM Features • Also available in Lead-free packages Functional Description[1] • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • High speed: 55 ns and 70 ns
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CY62256
450-mil-wide
300-mil
28-lead
600-mil
CY62256
CY62256LL-55SNxi
CY62256LL-55SNx
CY62256LL-70SNXC
CY62256LL70SNXI
CY62256LL-55SNXE
CY62256LL-70SNXI
CY62256LL-70PXC
CY62256LL-70SNX
CY62256L-70PXC
cy62256l-70snxc
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CY62256
Abstract: CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI
Text: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby
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CY9C62256
CY62256)
28-pin
CY62256
CY9C62256
CY9C62256-70SI
CY9C62256-70SNC
CY9C62256-70SNI
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FeRAM
Abstract: MRAM CY6264 CY9C6264 CY9C6264-70SI CY9C6264-70SNC CY9C6264-70SNI
Text: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form, fit, function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.
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CY9C6264
CY6264
64-bytes
CY9C6264
FeRAM
MRAM
CY6264
CY9C6264-70SI
CY9C6264-70SNC
CY9C6264-70SNI
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32k x 8 28 dip mram
Abstract: CY62256 CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI 22758
Text: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby
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CY9C62256
CY62256)
28-pin
32k x 8 28 dip mram
CY62256
CY9C62256
CY9C62256-70SI
CY9C62256-70SNC
CY9C62256-70SNI
22758
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CY62256
Abstract: CY62256-55 CY62256-70 CY62256L CY62256LL 5525L CY62256-70SNC CY62256L70SNC
Text: 56 CY62256 32K x 8 Static RAM Features vided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, Reverse
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CY62256
CY62256
450-mil-wide
300-mil
600-mil
CY62256-55
CY62256-70
CY62256L
CY62256LL
5525L
CY62256-70SNC
CY62256L70SNC
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CY62128
Abstract: CY62128-55ZC
Text: CY62128 128K x 8 Static RAM Features • 4.5V − 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 330 mW (max.) (60 mA) • Low standby power (70 ns, LL version) — 110 µW (max.) (20 µA) • Automatic power-down when deselected
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CY62128
CY62128
CY62128-55ZC
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all datasheet 62128
Abstract: STATIC RAM 62128 62128 62128-1 70ZI RAM 62128 CY62128 CY62128-55ZC CY62128-70ZC
Text: fax id: 1072 CY62128 128K x 8 Static RAM Features • 4.5V − 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 330 mW (max.) (60 mA) • Low standby power (70 ns, LL version) — 110 µW (max.) (20 µA) • Automatic power-down when deselected
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CY62128
CY62128
all datasheet 62128
STATIC RAM 62128
62128
62128-1
70ZI
RAM 62128
CY62128-55ZC
CY62128-70ZC
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32k x 8 28 dip mram
Abstract: No abstract text available
Text: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Description • 100% Form, Fit, Function-compatible with 32K x 8, micropower SRAM CY62256 . — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW (max.)
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CY9C62256
CY62256)
CY9C62256
32k x 8 28 dip mram
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CY9C6264-70PC
Abstract: No abstract text available
Text: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form-, fit-, and function-compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.
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CY9C6264
CY6264
64-bytes
CY9C6264
CY9C6264-70PC
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CY62148V
Abstract: No abstract text available
Text: fax id: 1093 CY62148V PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW max.
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CY62148V
CY62148V
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Untitled
Abstract: No abstract text available
Text: fax id: 1069 PRELIMINARY CYPRESS CY62256V 32K Features X 8 Static RAM ers. T hese d e vice s have an au to m a tic pow e r-d ow n feature, reducing th e po w e r con sum p tion by over 99% w h en d e se le ct ed. The C Y 6 2 2 5 6 V fam ily is available in the standard
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CY62256V
300-m
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Untitled
Abstract: No abstract text available
Text: fax id: 1068 _CY62256 32Kx8 Static RAM Features ou tp u t enable OE and th re e -sta te drivers. T his device has an au to m a tic po w er-dow n feature, reducing the po w e r c o n s u m p tion by 99 .9% w hen de selected . The C Y 6 22 56 is in the sta n
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CY62256
32Kx8
300-m
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E825
Abstract: CY62148V ZS32
Text: fax id: 1093 O YPH ESS W CY62148V PRELIMINARY 512Kx 8 Static RAM Features an au tom atic pow er-dow n feature tha t reduces pow er co n sum p tion by m ore than 99% w h en deselected. • 2 .7 V -3 .6 V o peratio n W riting to th e device is accom plished by taking chip enable
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CY62148V
CY62148V
E825
ZS32
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