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    6R520 Price and Stock

    CTS Corporation 516R52025ITR

    2.0mm x 1.6mm Surface Mount Clip
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    DigiKey 516R52025ITR Reel 3,000
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    Avnet Americas 516R52025ITR Reel 10 Weeks 3,000
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    Mouser Electronics 516R52025ITR
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    CTS Corporation 516R52020DTR

    2.0mm x 1.6mm Surface Mount Clip
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    DigiKey 516R52020DTR Reel 3,000
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    CTS Corporation 526R52025CTR

    3.2mm x 2.5mm Surface Mount HCMO
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    DigiKey 526R52025CTR Reel 3,000
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    Avnet Americas 526R52025CTR Reel 10 Weeks 3,000
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    CTS Corporation 516R52005CTR

    2.0mm x 1.6mm Surface Mount Clip
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    DigiKey 516R52005CTR Reel 3,000
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    Avnet Americas 516R52005CTR Reel 10 Weeks 3,000
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    Mouser Electronics 516R52005CTR
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    CTS Corporation 516R52005ITR

    2.0mm x 1.6mm Surface Mount Clip
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 516R52005ITR Reel 3,000
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    • 10000 $2.26123
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    Avnet Americas 516R52005ITR Reel 10 Weeks 3,000
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    Find more 6R520 price and stock on Findchips.com

    6R520 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6R520C6

    Abstract: IFX Design tools IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6


    Original     		PDF IPx60R520C6 IPD60R520C6, IPP60R520C6 IPA60R520C6 6R520C6 IFX Design tools IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6


    Original     		PDF IPx60R520E6 IPP60R520E6, IPA60R520E6

    6R520P

    Abstract: IPA60R520CP JESD22 mosfet d38
    Text: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R520CP PG-TO220 6R520P 6R520P IPA60R520CP JESD22 mosfet d38

    6R520C6

    Abstract: IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22 SMD mosfet MARKING code C6 TRANSISTOR SMD MARKING CODE 512 6R520C
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6 IPA60R520C6 Description


    Original     		PDF IPx60R520C6 IPD60R520C6, IPP60R520C6 IPA60R520C6 6R520C6 IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22 SMD mosfet MARKING code C6 TRANSISTOR SMD MARKING CODE 512 6R520C

    6R520C6

    Abstract: IPA60R520C6 IPx60R520C6 6R520C IPD60R520C6 IPP60R520C6 JESD22 J-STD-20
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6


    Original     		PDF IPx60R520C6 IPD60R520C6, IPP60R520C6 IPA60R520C6 6R520C6 IPA60R520C6 IPx60R520C6 6R520C IPD60R520C6 IPP60R520C6 JESD22 J-STD-20

    6r520

    Abstract: No abstract text available
    Text: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R520CP PG-TO220 6R520P 6r520

    Untitled

    Abstract: No abstract text available
    Text: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R520CP PG-TO263 6R520P

    6R520P

    Abstract: IPP60R520CP JESD22 PG-TO220-3
    Text: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R520CP PG-TO220 6R520P 6R520P IPP60R520CP JESD22 PG-TO220-3

    Untitled

    Abstract: No abstract text available
    Text: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R520CP PG-TO220 6R520P

    6R520E6

    Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6


    Original     		PDF IPx60R520E6 IPP60R520E6, IPA60R520E6 6R520E6 IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520

    IPA60R520CP

    Abstract: No abstract text available
    Text: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R520CP PG-TO220 6R520P IPA60R520CP

    Untitled

    Abstract: No abstract text available
    Text: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R520CP PG-TO220 6R520P

    6R520E6

    Abstract: IPA60R520E6 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6


    Original     		PDF IPx60R520E6 IPP60R520E6, IPA60R520E6 6R520E6 IPA60R520E6 JESD22

    6R520P

    Abstract: IPD60R520CP JESD22 smd transistor ISS d38 marking transistor SMD TRANSISTOR MARKING Dd
    Text: IPD60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPD60R520CP PG-TO252 6R520P 6R520P IPD60R520CP JESD22 smd transistor ISS d38 marking transistor SMD TRANSISTOR MARKING Dd

    IPB60R520CP

    Abstract: JESD22 SMD TRANSISTOR MARKING Dd 6R520P
    Text: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R520CP PG-TO263 6R520P IPB60R520CP JESD22 SMD TRANSISTOR MARKING Dd 6R520P