Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6A TRANSISTOR Search Results

    6A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)


    Original     		PDF 2SD2633 100max 10max 150min 2000min O220F

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    2SD2633

    Abstract: 84AB 2sd26
    Text: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)


    Original     		PDF 2SD2633 100max 10max 150min 2000min O220F 2SD2633 84AB 2sd26

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    1014-6A

    Abstract: No abstract text available
    Text: 1014-6A R2 1014-6A 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 Watts of CW or pulsed RF output power across the band 1000 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed


    Original     		PDF 014-6A 014-6A 1014-6A

    schematic atx 250

    Abstract: computer mother board circuit diagram I740 IRU1160 IRU1160CM IRU1160CP
    Text: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that


    Original     		PDF PD94130 IRU1160 IRU1160 O-263 schematic atx 250 computer mother board circuit diagram I740 IRU1160CM IRU1160CP

    I740

    Abstract: IRU1160 IRU1160CM IRU1160CP
    Text: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that


    Original     		PDF PD94130 IRU1160 IRU1160 RegulRU1160 O-263 1358C. I740 IRU1160CM IRU1160CP

    2SC5370

    Abstract: FM20
    Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A


    Original     		PDF 2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20

    2SD2389 power transistor

    Abstract: 2SD2389 audio Darlington 6A 2SB1559 transistor 2SB1559
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2389 APPLICATIONS


    Original     		PDF 2SD2389 -160V; 2SD2389 power transistor 2SD2389 audio Darlington 6A 2SB1559 transistor 2SB1559

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that


    Original     		PDF PD94130 IRU1160 IRU1160 O-263

    2SC5370

    Abstract: FM20 2402 transistor
    Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A


    Original     		PDF 2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20 2402 transistor

    BAT54A

    Abstract: MAX1945 MAX1945R MAX1945REUI MAX1945S MAX1945SEUI
    Text: 19-2640; Rev 0; 10/02 KIT ATION EVALU E L B A IL AVA 1MHz, 1% Accurate, 6A Internal Switch Step-Down Regulators Applications Features ♦ 6A PWM Step-Down Regulator with 95% Efficiency ♦ 1MHz/500kHz Switching for Small External Components ♦ 0.76in2 Complete 6A Regulator Footprint


    Original     		PDF 1MHz/500kHz 76in2 MAX1945R) MAX1945S) 180-Degree MAX1945R/MAX1945S BAT54A MAX1945 MAX1945R MAX1945REUI MAX1945S MAX1945SEUI

    atx 2.03 power supply schematic dc

    Abstract: I740 IRU1160 IRU1160CM IRU1160CP
    Text: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that


    Original     		PDF PD94130 IRU1160 IRU1160 O-263 atx 2.03 power supply schematic dc I740 IRU1160CM IRU1160CP

    2SB1254

    Abstract: 2SD1894
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 APPLICATIONS


    Original     		PDF 2SD1894 -160V; -140V; 2SB1254 2SD1894

    Untitled

    Abstract: No abstract text available
    Text: Technology Licensed from International Rectifier APU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown RoHS Compliant The APU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that


    Original     		PDF APU1160 APU1160 O-263 1358C.

    APU1160

    Abstract: APU1160S I740 regulator 5a 28v
    Text: Technology Licensed from International Rectifier APU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown RoHS Compliant The APU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that


    Original     		PDF APU1160 APU1160 O-263 1358C. APU1160S I740 regulator 5a 28v

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4– MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A pulsed * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with


    Original     		PDF ZTX718 ZTX618

    53-06A

    Abstract: 2n5306 2N5305
    Text: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are


    OCR Scan     		PDF 3fl75Dfll OG17c 2N5305, GES5305, S-42S27 10--Typical 53-06A 2n5306 2N5305

    2N5305

    Abstract: "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98
    Text: G E SOLI» STATE ~~ ~~ Gl DËT| 307SDÛ1 OG17c]47 D T ~ * 7 ~ z 7 Signal Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 T h e G E / R C A 2N5305, 06, 06A and G E S 5 3 0 5 , 6, and 6A are


    OCR Scan     		PDF a017c 2N5305, GES5305, 92CS-42S2T 92CS-42626 2N5305 "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98

    pnp 1500v 8a

    Abstract: fr120 2SD1548 2SD2253 2SC4352 2sc5027 2SC2706 2SD2499 2sc4544 diode 6a 250v
    Text: Horizontal Deflection Output Transistors for Color TV Description Ic For Small Screen Color TV VC80=1500V TO-3P H (BS) 2.5A 3.5A 2.5A 3.SA 3.5A 5A 2SD1431 2SD1432 6A 2SD1433 2SD1427 SA 6A 2SD1428 8A 10A 6A 7A 9A For Largs 16:9 Sctmh Color TV Vcao=1700V For Large 16:9 Screw Color TV


    OCR Scan     		PDF 1S00V 2SD1543 2SD1544 2SD1553 2SD1554 2SD2089 2SD1545 2SD1546 2SD2498 2SD1547 pnp 1500v 8a fr120 2SD1548 2SD2253 2SC4352 2sc5027 2SC2706 2SD2499 2sc4544 diode 6a 250v

    vp1210n5

    Abstract: VP1204N2
    Text: yjßSupertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package If ^DS ON BVdgs -40V (max) 0.8Q -60V 0.8£i -100V 0.8£i -6A DICEt TO-39 TO-220 -6A VP1204N2 VP1204N5 VP1204ND -6A VP1206N2


    OCR Scan     		PDF VP1204N2 VP1206N2 VP1210N2 O-220 VP1204N5 VP1206N5 VP1210N5 VP1204ND VP1206ND VP1210ND

    Kvp 26A

    Abstract: kvp 3a kvp 42 DIODE kvp 34 DIODE 100-200KV kvp diode kvp 68A hv rectifiers diode kvp 26 DIODE 8ph ZENER
    Text: NEW E-MAIL ADDRESS DIODES [email protected] AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000


    OCR Scan     		PDF 600mA 220mA 200mA 175mA 150mA 100mA 500mA Kvp 26A kvp 3a kvp 42 DIODE kvp 34 DIODE 100-200KV kvp diode kvp 68A hv rectifiers diode kvp 26 DIODE 8ph ZENER

    si 13001

    Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm


    OCR Scan     		PDF ENN6662 2SB633P 2SD613P 2SD613P] O-220 si 13001 transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001

    si 13001

    Abstract: transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions • High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm 201 OC


    OCR Scan     		PDF ENN6662 2SB633P 2SD613P 2SB633P 2SD613P] O-220 IT02147 IT02149 SB633 si 13001 transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor