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    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M 6FC39V 7177 7.1~ 7.7GH z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF 6FC39V MGFC39V7177 Item-01: Item-51: 27C102P, RV-15 16-BIT)