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    Samsung Semiconductor KM68257BJ-20

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    Bristol Electronics KM68257BJ-20 8,098
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    Samsung Electronics Co. Ltd KM68257BP-20

    Electronic Component
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    ComSIT USA KM68257BP-20 818
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    68257B Datasheets Context Search

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    KM68257Bp-20

    Abstract: KM68257BP20 KM68257BP KM68257BP-25 KM68257BP-15 KM68257BJ25 KM68257BJ20 328-pin km68257bj KM68257
    Text: 68257B CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating K M 68257BP/J-15: 150mA (max.) 68257BP/J-20: 140mA (max.)


    OCR Scan     		PDF KM68257B 68257BP/J-15: 150mA KM68257BP/J-20: 140mA KM68257BP/J-25: KM68257BP: 28-pin KM68257BJ: KM68257Bp-20 KM68257BP20 KM68257BP KM68257BP-25 KM68257BP-15 KM68257BJ25 KM68257BJ20 328-pin km68257bj KM68257

    KM68257B-20

    Abstract: KM68257bl
    Text: CMOS SRAM 68257B/BL 32 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40m A (max.) (C M O S ): 100,aA(Max.) L-Ver 2mA(Max.) Operating KM 68257B /B L-15:150m A (Max.)


    OCR Scan     		PDF KM68257B/BL 68257B KM68257BP/BLP: 28-pin KM68257BJ/BLJ: KM68257B-20 KM68257bl

    Untitled

    Abstract: No abstract text available
    Text: 68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating 68257B-15 : 150mA (max.) 68257B-20: 140mA (max.) 68257B-25: 130mA (max.)


    OCR Scan     		PDF KM68257B KM68257B-15 150mA KM68257B-20: 140mA KM68257B-25: 130mA KM68257BP: 28-DIP-300 KM68257BJ

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    KM68257BP

    Abstract: KM68257Bp-20 KM68257BJ25
    Text: PRELIMINARY 68257B CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating 68257BP/J-15: 150mA (max.) 68257BP/J-20: 140m A (max.)


    OCR Scan     		PDF KM68257B KM68257BP/J-15: 150mA KM68257BP/J-20: KM68257BP/J-25: KM68257BP: 28-pin KM68257BJ: KM68257BP KM68257Bp-20 KM68257BJ25

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 68257B CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 1S, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM6S2S7BPfJ-15: 150mA (max.) 68257BP/J-20: 140mA (max.)


    OCR Scan     		PDF KM68257B KM6S2S7BPfJ-15: 150mA KM68257BP/J-20: 140mA KM68257BPM-25: 130mA KM6B257BP: 28-pin KM68257BJ:

    KM28C64A

    Abstract: No abstract text available
    Text: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19


    OCR Scan     		PDF KM75C03A. KM75C101A. KM75C102A. KM75C103A. KM75C104A. KM28C64A

    KM68257bl

    Abstract: No abstract text available
    Text: 68257BL CMOS SRAM 32,768 WORD x 8 Bit High Speed CMOS Static RAM FEATURES • Fast A cc e s s Tim e: 15, 20, 25n s m ax. • Low Pow er D issipation S tandb y (TTL) : 30m A (m ax.) (C M O S ): 100pA (m ax.) O p e ra tin g K M 6 8 2 5 7 B L P /J -1 5: 1 5 0 m A (m a x .)


    OCR Scan     		PDF KM68257BL 100pA 68257B 28-pin KM68257bl

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001