C2877
Abstract: c2874 7C28 c2872 C2879 CY7C287 7C287-65 CY7C287-55WMB
Text: 1CY 7C28 7 CY7C287 64K x 8 Reprogrammable Registered PROM Features put enable that can be programmed to be synchronous ES or asynchronous (E). It is available in a 28-pin, 300-mil package. The address set-up time is 45 ns and the time from clock HIGH to output valid is 15 ns.
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CY7C287
28-pin,
300-mil
CY7C287
C2877
c2874
7C28
c2872
C2879
7C287-65
CY7C287-55WMB
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SMD DIODE A13
Abstract: smd diode code A13 A13 smd smd transistor w16 CY7C251-45PC transistor smd w16 7c251 C2511 C2515 CY7C251-65WC
Text: 1CY 7C25 4 CY7C251 CY7C254 16K x 8 Power Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial The CY7C251 and CY7C254 are high-performance
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CY7C251
CY7C254
CY7C251
CY7C254
384-word
300-mil-wide
7C254
600-mil-wide
7C251
SMD DIODE A13
smd diode code A13
A13 smd
smd transistor w16
CY7C251-45PC
transistor smd w16
C2511
C2515
CY7C251-65WC
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7c251
Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed
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OCR Scan
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PDF
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CY7C251
CY7C254
7C251)
300-mil
600-mil
CY7C254
384-word
Y7C251
7c251
a1s smd
smd code A1s
smd diode code A1s
65WMB
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Untitled
Abstract: No abstract text available
Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat
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OCR Scan
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PDF
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CY7C251
CY7C254
7C251)
300-m
600-mil
CY7C251
CY7C254
384-word
PROMs3802
CY7C254â
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Untitled
Abstract: No abstract text available
Text: CY7G287 CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding >2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tCo = IS ns
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OCR Scan
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PDF
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300-mil
CY7G287
CY7C287
28-Lead
300-Mil)
CY7C287
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7C251
Abstract: C2515 SMD DIODE A13 C251-5 CY7C251-45WC CY7C251 CY7C254 01d smd code smd diode code A1s 5962-895370
Text: CY7C251 CY7C254 y CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251) — Less than 165 mW when deselected
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OCR Scan
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PDF
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CY7C251
CY7C254
7C251)
300-mil
600-mil
384-word
Y7C251
7C251
C2515
SMD DIODE A13
C251-5
CY7C251-45WC
01d smd code
smd diode code A1s
5962-895370
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Untitled
Abstract: No abstract text available
Text: CY7C286 CY7C287 CYPRESS 65,536 x 8 Reprogrammable SEMICONDUCTOR Asynchronous/Registered PROMs Features Functional Description The CY7C286 and the CY7C287 are high-perfbrmance 65,536 by 8-bit CMOS PROMs. The CY7C286 is configured in the JEDEC-standard S12K EPROM pin
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OCR Scan
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PDF
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CY7C286
CY7C287
CY7C286
CY7C287
28-pin,
600-mil
7C286)
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LC 7258
Abstract: 333Q CY7C287 32fl diode A14A
Text: CY7C287 * CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding > 2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tc o = 15 ns
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OCR Scan
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PDF
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CY7C287
300-mil
CY7C287
28-p32-Pin
CY7C287â
65QMB
32-Pin
65WMB
LC 7258
333Q
32fl
diode A14A
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A15C
Abstract: CY7C287 CY7C287-55PC LCOS uv
Text: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)
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OCR Scan
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PDF
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CY7C286
CY7C287
7C287)
7C286)
7C287
300-mil
A15C
CY7C287
CY7C287-55PC
LCOS uv
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3Cs 6 PIN SMD CHIP
Abstract: AFL smd code CY7C251 CY7C251-45PC Programming SMD code l32 u1p smd 7C251 CY7C254 W2265
Text: -c PRESS MbE D SEMICONDUCTOR • ^ 2 5 0 = ^ 2 0QGb7b7 1 , - if CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed Tor reprogrammability • Highspeed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251)
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OCR Scan
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PDF
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CY7C251
CY7C254
7C251)
300-mil
600-mll
CY7C251
CY7C254
16384-word
CY7C251-65WMB
CY7C251-65TMB
3Cs 6 PIN SMD CHIP
AFL smd code
CY7C251-45PC
Programming
SMD code l32
u1p smd
7C251
W2265
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Untitled
Abstract: No abstract text available
Text: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)
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OCR Scan
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PDF
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CY7C286
CY7C287
7C287)
7C286)
7C287
300-mil
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Untitled
Abstract: No abstract text available
Text: CY7C251 CY7C254 F/ CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable of withstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed
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OCR Scan
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PDF
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CY7C251
CY7C254
7C251)
300-mil
600-mil
CY7C251
CY7C254
384-word
65WMB
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