ARF461AG
Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
Text: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF461A
ARF461B
65MHz
ARF461AG
VK200-4B
40.68mhz
40.68MHz power amplifier
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C0603COG500-680JNE
Abstract: SRF-1016 C0603COG500-101JNE SRF-2016
Text: SRF-1016 Z 65MHz to 300MHz Silicon Germanium IF Receiver SRF-1016(Z) Preliminary 65MHz to 300MHz SILICON GERMANIUM IF RECEIVER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s SRF-1016 is a quadrature demodulator RFIC designed for UHF
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SRF-1016
65MHz
300MHz
16-Pin,
16-pin
TCR0603-16W-000T
C0603COG500-680JNE
C0603COG500-101JNE
SRF-2016
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R0605250L1
Abstract: Premier Devices Germany
Text: Product Specification R0605250L1 Si Reverse, low current, 5 – 65 MHz, 25.2dB typ. Gain @ 65MHz, 135mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R0605250L1
65MHz,
135mA
24VDC
65MHz
D-90441
R0605250L1
Premier Devices Germany
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Untitled
Abstract: No abstract text available
Text: KSE210 KSE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to KSE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSE210
65MHz
-100mA
KSE200
O-126
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MJE210
Abstract: No abstract text available
Text: MJE210 MJE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to MJE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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MJE210
65MHz
-100mA
MJE200
O-126
MJE210
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Untitled
Abstract: No abstract text available
Text: KSE200 KSE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSE200
65MHz
100mA
KSE210
O-126
KSE200STSTU
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Untitled
Abstract: No abstract text available
Text: 65MHz SAW Filter 24MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN06505 www.sipatsaw.com Features For IF SAW filter High attenuation Single-ended operation Dual In-line Package
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65MHz
24MHz
LBN06505
2002/95/EC)
13MHz)
10deg/Div
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Untitled
Abstract: No abstract text available
Text: PLL520-80 Low Phase Noise VCXO 9.5-65MHz DIE CONFIGURATION FEATURES XIN DIE SPECIFICATIONS Name Value Size Reverse side Pad dimensions Thickness 62 x 65 mil GND 80 micron x 80 micron 10 mil OUTSEL0^ VDD VDD VDD VDD N/C Reserved OUTSEL1^ 24 23 22 21 20 19
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PLL520-80
5-65MHz)
C502A
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Untitled
Abstract: No abstract text available
Text: PLL620-88/-89 Low Phase Noise XO 9.5-65MHz Output PIN CONFIGURATION FEATURES • Crystal input range: 19MHz to 65MHz Output range: 9.5MHz – 65MHz Very low phase noise and jitter Complementary outputs: o LVPECL (PLL620-88) o LVDS (PLL620-89)
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PLL620-88/-89
5-65MHz
19MHz
65MHz
PLL620-88)
PLL620-89)
TSSOP-16L
PLL620-88
PLL620-89
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ABV2088
Abstract: ABV2088OC ABV2088OC-T ABV2089 E5500
Text: Preliminary ABV2088/89 Low Phase Noise VCXO 9.5-65MHz FEATURES 19MHz to 65MHz fundamental crystal input. Output range: 9.5MHz – 65MHz Complementary outputs: PECL or LVDS output. Selectable OE Logic (enable high or enable low). Integrated variable capacitors.
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ABV2088/89
5-65MHz)
19MHz
65MHz
65MHz
ABV2088
ABV2089
65MHz.
65MHCorporation,
ABV2088
ABV2088OC
ABV2088OC-T
ABV2089
E5500
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Untitled
Abstract: No abstract text available
Text: PLL620-80 Low Phase Noise XO 9.5-65MHz Output DIE CONFIGURATION FEATURES XIN OUTSEL0^ VDD VDD VDD VDD N/C Reserved OUTSEL1^ 24 23 22 21 20 19 18 17 26 Die ID: A2020-20B XOUT 27 N/C 28 S2^ 29 OE CTRL 30 N/C 31 C502A 16 CMOS 15 LVDSB 14 PECLB 13 12 VDDBUF
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PLL620-80
5-65MHz
A2020-20B
C502A
PLL620-80
19MHz
65MHz.
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Untitled
Abstract: No abstract text available
Text: Product Specification R0605250L Si Reverse, low current, 5 – 65 MHz, 25.2dB typ. Gain @ 65MHz, 140mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise
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R0605250L
65MHz,
140mA
24VDC
65MHz
D-90441
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MAX3503
Abstract: MAX3503EGP
Text: 19-2339; Rev 1; 3/02 KIT ATION EVALU E L B A AVAIL Upstream CATV Amplifier ♦ Single 3.3V Supply Operation ♦ Accurate Gain Control, ±1dB over 53dB Range ♦ Gain Programmable in 0.5dB Steps ♦ -55dBc Harmonic Distortion at 65MHz ♦ Low Burst On/Off Transient
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-55dBc
65MHz
182mW
34dBmV
MAX3503EGP
MAX3503
MAX3503
MAX3503EGP
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Untitled
Abstract: No abstract text available
Text: ARF460A/G ARF460B/G 125V, 150W, 65MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE TO -2 47 Common Source The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power
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ARF460A/G
ARF460B/G
65MHz
ARF460A
ARF460B
65MHz.
68MHz
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VK200-4B
Abstract: ARF446 ARF447
Text: ARF446 ARF447 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 140W 65MHz The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
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ARF446
ARF447
O-247
65MHz
ARF446
ARF447
ARF446/447
VK200-4B
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ARF448A
Abstract: ARF446 ARF447 ARF448B VK200-4B
Text: ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
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ARF448A
ARF448B
O-247
65MHz
ARF448A
ARF448B
ARF448A/448B
ARF446
ARF447
VK200-4B
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arco mica trimmer
Abstract: class B push pull power amplifier ARF461A ARF461B VK200-4B class td amplifier
Text: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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ARF461A
ARF461B
O-247
65MHz
ARF461A
ARF461B
O-247
335nH
VK200-4B
ARF461A/B
arco mica trimmer
class B push pull power amplifier
class td amplifier
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Untitled
Abstract: No abstract text available
Text: VT Type 7.0 x 5.0 mm SMD PECL/LVDS Voltage Controlled Crystal Oscillator PECL Parameter Supply Voltage Variation VDD 5% Frequency Range Standard Frequency Absolute Pulling Range (APR) Control Voltage Range Supply Current 1.5MHz ≦F0 < 65 MHz 65MHz ≦F0 < 200 MHz
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65MHz
100MHz
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M74HC4060
Abstract: M74HC4060B1R M74HC4060M1R M74HC4060RM13TR M74HC4060TTR
Text: M74HC4060 14 STAGE BINARY COUNTER/OSCILLATOR • ■ ■ ■ ■ ■ ■ HIGH SPEED: fMAX = 65MHz TYP. at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)
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M74HC4060
65MHz
M74HC4060
14-STAGE
DIP-16
P001C
M74HC4060B1R
M74HC4060M1R
M74HC4060RM13TR
M74HC4060TTR
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Untitled
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COL LECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fr=65MHz lc=100mA • Complement to KSE210 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage
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KSE200
65MHz
100mA
KSE210
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ARCO
Abstract: ARF448
Text: A dvanced P ow er T e c h n o lo g y ^ ARF448A ^ RF POWER MOSFETs N -C H A NN EL ENHANCEMENT MODE 150V 250W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
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ARF448A
65MHz
ARF448A
ARF448B
ARF448imeters
ARF446
ARF447
F-33700
ARCO
ARF448
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Untitled
Abstract: No abstract text available
Text: CONNOR—WINFIELD CORPORATION AURORA, IL. 60505 PHONE 630 851-472 2 FAX (630) 851 -5 0 4 0 HIGH FREQUENCY VCXO WITH T R I - STATE HVT54I— 100 SPECIFICATIONS Frequency Range (Fo) 30MHz to 100MHz HVT54I— 150 30MHz to 100MHz HVT54I— 200 30MHz to 65MHz
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HVT54Iâ
30MHz
100MHz
65MHz
50Vdc)
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LC 21 B
Abstract: KSE200 KSE210
Text: NPN EPITAXIAL SILICON TRANSISTOR KSE200 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA • C om plem ent to KSE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage
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KSE200
65MHz
100mA
KSE210
LC 21 B
KSE200
KSE210
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MJE200
Abstract: MJE210
Text: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic V obo
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MJE200
65MHz
100mA
MJE210
O-126
500mA,
200mA
100mA,
10MHz
MJE200
MJE210
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