siemens sab 82532
Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
235b05
82532N-10.
00702fl2
siemens sab 82532
82258
SA 82532
SAB 80286
csc 2323
sab80286
STT 3 SIEMENS
80286 microprocessor pin out diagram
ESCC2
siemens sab 82525
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode Chip position • SFH 234 S Common Cathode 2.0 s 0.45 i— L LO O Ni O OCO ct>ct> c o c o c d m* ^ rrfl 3 .0 j _14.5 12.5" 0.3max Radiant sensitive area 0.5x0.5mm each Approx. weight 1.5 g
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fl235b05
6535b05
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon Variable Capacitance Diode B B 639 • For tuning of extended frequency bands •in V H F TV/VTR tuners ty p e BB 639 Ordering Code Pin Configuration tape and reel 1 2 Q62702-B586 C A Marking Package yellow S SOD-323 Maximum Ratings
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Q62702-B586
OD-323
D12DMb2
6535b05
01HQ4bB
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B158-H6497-X-X-7600
Abstract: A535B old Resistors Siemens s
Text: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5, up to 18 MHz operation
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83C517A-5
80C517A
10-bit
80C515,
80C517,
80C515A
P-LCC-84,
P-MQFP-100-2
80C517A/83C5r
MQFP--100
B158-H6497-X-X-7600
A535B
old Resistors Siemens s
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DIODE 3LU
Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
Text: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors
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023SbOS
-50V-
Tmm1S25Â
DQG4420
DIODE 3LU
D959
Q62702-D961
Q62702-D959
3lu diode
BD 862
Diode 864
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)
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Q68000-A4417
OT-23
EHP00770
EHP00772
S35bOÂ
01EES4S
A235b05
012254b
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Untitled
Abstract: No abstract text available
Text: Ö235b05 QGD4440 7 « S I E Û SSC D PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04440 7 "- l l - z ! BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.
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235b05
QGD4440
BDX27
BDX28
Q62702-D162
Q62702-D162-V6
Q62702-D162-V10
Q62702-D162-V16
Q62702-D159
Q62702-D159-V6
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s259b
Abstract: No abstract text available
Text: QBE D • Û235b05 OülblbH 3 « S I E G Light Emitting Diodes ii / T LG S259 LSS259 Q LED low-current single diodes • • • • • • Backlighting of LCDs Indicator for switching and operation modes Direct drive is possible via CMOS gate and LSTTL components
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235b05
LSS259
Q62703-Q1598
Q62703-Q1579
Q62703-Q1599
18-cm-reel
33-cm-reel
E-7503
E-7502
Q62703-Q1566
s259b
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B45181
Abstract: marking 7EU C4335
Text: B 45 181 B 45 185-A, B 45 185-V Radial-Lead Capacitors with Solid Electrolyte Construction • • • Tantalum capacitors with solid electrolyte, polar M olded encapsulation, flam e-retardant UL 94 V-0 Radial wire leads with standard spacing (nickel-coated wire, tinned)
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235bOS
Q075071
007S07S
6535b05
0Q7S073
B45181
marking 7EU
C4335
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F1489
OT-323
Q122QS3
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon AF Transistors • • • • • BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 PNP BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Marking CB CC
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Q62702-C1572
Q62702-C1864
Q62702-C1865
Q62702-C1866
OT-89
BCX68
fiS35bCI5
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Untitled
Abstract: No abstract text available
Text: ,• SIEM EN S ñSBSbüS 002*^5= T ■ S I E G SIEMENS A KTIENGESELLSCHAF M7E D SAB 80C166/83C166 High-Performance 16-Bit CMOS Single-Chip Microcontrollers for Embedded Control Applications Advance Information SAB 83C166-3S SAB 80C166-S • • • • •
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80C166/83C166
16-Bit
83C166-3S
80C166-S
16-bit
16x16
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B62152A0008X030
Abstract: smd code 10y 2205-T PMB2205 2205S
Text: SIEMENS Quadrature Phase Modulator PM B 2205 Preliminary Data Bipolar 1C Features • • • • • • • • • • • • • • • • • Double-balanced mixers Direct modulation Linear modulating inputs Symmetrical circuitry Generation of orthogonal carriers within a wide
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P-DSO-20-1
P-DSO-20-4
fiE3Sb05
0DS111S
B62152A0008X030
smd code 10y
2205-T
PMB2205
2205S
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smd transistor marking a2h
Abstract: smd transistor marking a7h smd transistor marking a1h 81C91 smd TRANSISTOR code marking A4H SAE81C90 transistor marking code TS2 smd transistor marking p14 cpu 222 siemens TRANSISTOR SMD MARKING CODE BCH
Text: SIEMENS Stand Alone Full CAN Controller SAE 81C90/91 P r e lim in a r y D a ta • • Full CAN controller for data rate up to 1 Mbaud Com plies with CAN specification V2.0 part A part B passive • Up to 16 messages simultaneous (each with maximum data length)
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81C90/91
P-LCC-44-1
P-LCC-44-1
81C90
I/O15
235b05
G07T7Ã
smd transistor marking a2h
smd transistor marking a7h
smd transistor marking a1h
81C91
smd TRANSISTOR code marking A4H
SAE81C90
transistor marking code TS2
smd transistor marking p14
cpu 222 siemens
TRANSISTOR SMD MARKING CODE BCH
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 8-Bit CMOS Microcontroller C517A Advance Information • • • • • • • • • • Full upward compatibility with SAB 80C517A/83C517A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation Superset of the 8051 architecture with 8 datapointers
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C517A
80C517A/83C517A-5
P-MQFP-100-2
A235bOS
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SIEMENS 3 TB 40 12 - 0A
Abstract: smd transistor 2T5 SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0A
Text: SIEMENS ISDN Subscriber Access Controller for UpN-lnterface Terminals ISAC -P TE PSB 2196 Preliminary Data 1 • • • • • • • • • • CMOS IC Features Cost/performance-optimized UPN-interface transceiver, compatible to PEB 2096 OCTAT-P HDLC-controller with 2 x 32 byte FIFO per direction
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Q67100-H6392
P-LGC-44-
00bfl701
SIEMENS 3 TB 40 12 - 0A
smd transistor 2T5
SIEMENS 3 TB 40 10 - 0A
SIEMENS 3 TB 40 17 - 0A
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kss 210
Abstract: Q67100-Q3016 Q67100-Q3017
Text: SIEM E N S 4M X 36-Bit EDO-DRAM Module HYM 364035S/GS-60 Advanced Inform ation • 4 194 304 words by 36-Bit organization • Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time • Hyper page mode EDO capability 25 ns cycle time
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36-Bit
364035S/GS-60
L-SIM-72)
L-SIM-72-13
75x157
kss 210
Q67100-Q3016
Q67100-Q3017
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t07 transistor smd
Abstract: smd transistor 2T6 SMD Transistor t07
Text: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •
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flE35b05
00fll430
BTS410E2
fl23Sb05
O-220AB/5
410E2
O-22QAB/5,
E3043
Q67060-S6102-A2
410E2
t07 transistor smd
smd transistor 2T6
SMD Transistor t07
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8883
fl235b05
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transistor zo 103 MA 7S 738
Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Text: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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BFQ72
Q62702-F776
fl235b05
00b714S
transistor zo 103 MA 7S 738
SiEMENS PM 350 98
VCE05181
siemens 350 98
siemens Pm 90 87
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TUA4300P
Abstract: No abstract text available
Text: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300P The TUA 4300P is a one-chip car radio system consist ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu lator and stereo decoder/noiseblanker.
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4300P
4300P
535b05
fi23SbDS
P-LCC-68-1
12x45Â
TUA4300P
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3 V 168 pin Registered SDRAM Modules HYS 72V8200GR HYS 72V16200GR HYS 72V32200GR HYS 72V32220GR HYS 72V64200GR HYS 72V128220GR 64MB, 128MB, 256MB, 512MB & 1GB Densities Preliminary Information • 168 Pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module
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72V8200GR
72V16200GR
72V32200GR
72V32220GR
72V64200GR
72V128220GR
128MB,
256MB,
512MB
D12342Ã
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smd marking code BS sot-23 infineon
Abstract: No abstract text available
Text: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33
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OT-23
Q67041-S1416
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd marking code BS sot-23 infineon
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