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    64K BIT DRAM Search Results

    64K BIT DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    64K BIT DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CL-GD5480

    Abstract: intel 945 crb alpine md53 intel 845 crb schematics 945 MOTHERBOARD CIRCUIT diagram 945 crb INTEL 945 crb schematics vesa GD5480 pitch 0.4 QFP 256p
    Text: CL-GD5480 Advance Data Book FEATURES 64-Bit SGRAM GUI Accelerator • 64-bit high-bandwidth synchronous DRAM interface — 800 Mbytes/sec. peak memory bandwidth — Supports modes up to 1600 x 1200, 64K colors at 60 Hz and 1280 × 1024, 16.8M colors at 75 Hz


    Original     		PDF CL-GD5480 64-bit CL-GD5480 intel 945 crb alpine md53 intel 845 crb schematics 945 MOTHERBOARD CIRCUIT diagram 945 crb INTEL 945 crb schematics vesa GD5480 pitch 0.4 QFP 256p

    planar YUV

    Abstract: cl-gd5480 Cirrus Logic Voyager CL-GD5446 1996 ramdac planar planar YUV display input bitblt 43ia
    Text: CL-GD5480 Advance Product Bulletin FEATURES 64-Bit SGRAM GUI Accelerator • 64-bit high-bandwidth synchronous DRAM interface — 800 Mbytes/sec. peak memory bandwidth — Supports modes up to 1600 x 1200, 64K colors at 60 Hz and 1280 × 1024, 16.8M colors at 75 Hz


    Original     		PDF CL-GD5480 64-Bit PC97-compliant planar YUV cl-gd5480 Cirrus Logic Voyager CL-GD5446 1996 ramdac planar planar YUV display input bitblt 43ia

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY KM29N16000TS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000TS/RS is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array : (2M +64K) x 8 bit


    OCR Scan     		PDF KM29N16000TS/RS KM29N16000TS/RS 264-byte KM29N16000 Figure14

    KM428C64

    Abstract: "Video RAM" Video RAM
    Text: KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port Performance range : . Parameter Speed . RAM access time tR A c RAM access time (tc A c ) The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port


    OCR Scan     		PDF KM428C64 130ns 150ns 100ns 180ns KM428C64 "Video RAM" Video RAM

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM29V16000ATS/RS FLASH MEMORY 2M X 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register The KM29V16000ATS/RS is a 2M(2,097,152)x8 bit NAND Flash memory with a spare 64K(65.536)x8 bit. Its NAND


    OCR Scan     		PDF KM29V16000ATS/RS 250us KM29V16000A Figure15

    80C31 instruction set

    Abstract: EXIF-91h
    Text: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM


    OCR Scan     		PDF DS80C320 80C32-Compatible 10X10X2 abl4130 44-PIN 2bl413G 80C31 instruction set EXIF-91h

    DALLAS DS80C320

    Abstract: DS80C320-QCG T movx 80C32 DS80 DS80C320 DS80C320-FCG DS80C320-FNG DS80C320-QCG QDG775S
    Text: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM


    OCR Scan     		PDF DS80C320 80C32-Compatible 16-bit abl4130 000777a 44-PIN 2bl413Q DALLAS DS80C320 DS80C320-QCG T movx 80C32 DS80 DS80C320 DS80C320-FCG DS80C320-FNG DS80C320-QCG QDG775S

    3171S

    Abstract: No abstract text available
    Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND


    OCR Scan     		PDF KM29V16000ARS KM29V16000ATS/RS 264-byte 250fjs 003172R -TSOP2-400F -TSOP2-400R 3171S

    Untitled

    Abstract: No abstract text available
    Text: CMOS VIDEO RAM ÍM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port A rchitecture 64K x 4 bits R AM port The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It consists of a 6 4 K x 4 dynamic random access memory RAM port and 256 x 4 static serial •


    OCR Scan     		PDF M424C64 KM424C64 KM424C64 24-PIN

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D • 7=11,4145 G O l b S D ? 3T4 H S M ä K KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES ■ Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port - Performance range : The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port


    OCR Scan     		PDF KM428C64 KM428C64 130ns 150ns 180ns

    am9064

    Abstract: cvp 45 Am90C644
    Text: Am90C644 64K X 4 CMOS DUAL-ARRAY MEMORY ADVANCE INFORMATION 64K x 4 organization High-speed access: tpAC - 1 00 ns Write-per-Bit mask allows separatewrite controls for each of the four DRAM input bits On-chip video shifter with up to 100Megapixel/sec. bandwidth


    OCR Scan     		PDF Am90C644 100Megapixel/sec. 144-bit WF010 WF000372 am9064 cvp 45

    Untitled

    Abstract: No abstract text available
    Text: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It c o n s is ts o f a 6 4 K x 4 dynam ic random


    OCR Scan     		PDF KM424C64 KM424C64 24-PIN

    3771 8 pin ic

    Abstract: 3771 ic 8 pin 8 pin ic 3771 3771 1A7A1 3771- IC
    Text: LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71V016L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V016L is a 1,048,576-bit very low-pow er Static RAM organized as 64K x 16. It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		PDF 16-BIT) IDT71V016L 100ns 44-pin 576-bit 71V016 400-mil 3771 8 pin ic 3771 ic 8 pin 8 pin ic 3771 3771 1A7A1 3771- IC

    3771

    Abstract: 3771 ic 8 pin
    Text: LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71V016L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V016L is a 1,048,576-bit very low-pow er Static RAM organized as 64K x 16. It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		PDF 16-BIT) IDT71V016L 100ns 44-pin T71V016L 576-bit 9S054 3771 3771 ic 8 pin

    Untitled

    Abstract: No abstract text available
    Text: J MN1020019 / 0219 / 0419 / 0819 MN1020019 / 0219 / 0419 / 0819 1 Type 1 ROM x8-bit/x16-bit External / 1 6K / 32K / 64K (External Memory Expandable) 1 RAM (x8-bit/x16-bit) 3K / 1 K / 2K / 3K (External Memory Expandable) I Minimum Instruction Execution Time


    OCR Scan     		PDF MN1020019 x8-bit/x16-bit) 100ns 20MHz) 200ns 10MHz)

    Untitled

    Abstract: No abstract text available
    Text: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit


    OCR Scan     		PDF KM29V16000ATS KM29V16000ATS/RS 264-byte 250ps -TSOP2-400F -TSOP2-400R 0031flfll

    HY53C464LS

    Abstract: LASCR HY53C464S HY53C464 MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70
    Text: HY53C464 Series »HYUNDAI 64K X 4-bit CMOS DRAM DESCRIPTION The HY53C464 is feist dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C464 330mil 18pin 1AA02-20-MAY94 4b750flà HY53C464S HY53C464LS LASCR MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70

    HM534

    Abstract: hitachi sr 302 HM53462P-12 HM53462P12 HM53462P-15
    Text: HMS3462 Series 65,536-word x 4 bits Multi Port DRAM with Logic operation mode The HM53462P is a 262,144 bit multi port memory equipped with a 64k word x 4 bit Dynamic RAM port and a 256 word x 4 bit Serial Access Memory (SAM) port. The SAM port is con­


    OCR Scan     		PDF HMS3462 536-word HM53462P HM534 hitachi sr 302 HM53462P-12 HM53462P12 HM53462P-15

    Untitled

    Abstract: No abstract text available
    Text: KM29V16000AR Flash ELECTRONICS 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES •Single 3.3-volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte


    OCR Scan     		PDF KM29V16000AR 250us 003170b

    NMOS DRAM

    Abstract: KM4164BP KM4164 km4164b
    Text: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor­


    OCR Scan     		PDF KM4164B KM4164B-10 KM4164B-12 KM4164B-15 100ns 120ns 150ns 190ns 220ns 260ns NMOS DRAM KM4164BP KM4164 km4164b

    KM29N16000ATS

    Abstract: No abstract text available
    Text: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization Flash memory with a spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array


    OCR Scan     		PDF KM29N16000ATS/RS KM29N16000ATS/RS 264-byte KM29N16000A Figure14 KM29N16000ATS

    KM29V16000ATS

    Abstract: No abstract text available
    Text: KM29V 16000ATS ELECTRONICS Flash 2M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte


    OCR Scan     		PDF KM29V 250us 16000ATS -TSOP2-400F -TSOP2-400R KM29V16000ATS 7Tb4142 KM29V16000ATS

    D240C

    Abstract: No abstract text available
    Text: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte


    OCR Scan     		PDF KM29N16000T/R D240C

    ti77

    Abstract: BV EI 301
    Text: PRELIM INARY KM 29V16000ATS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization • - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase


    OCR Scan     		PDF KM29V16000ATS/RS 250us KM29V16000A Figure15 0D242fl2 ti77 BV EI 301