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    609 200A Search Results

    609 200A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP65S08DWA-00#W0 Renesas Electronics Corporation IGBT 650V 200A Wafer Visit Renesas Electronics Corporation
    RJP65S08DWT-80#X0 Renesas Electronics Corporation IGBT 650V 200A Chip Visit Renesas Electronics Corporation
    RJP65S08DWT-00#X0 Renesas Electronics Corporation IGBT 650V 200A Chip Visit Renesas Electronics Corporation
    RJP1CS08DWT-80#X0 Renesas Electronics Corporation IGBT 1250V 200A Chip Visit Renesas Electronics Corporation
    RJP1CS08DWS-80#W0 Renesas Electronics Corporation IGBT 1250V 200A Sawn Visit Renesas Electronics Corporation
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    609 200A Price and Stock

    Samtec Inc ARC6-16-09.0-LU-LD-2-1

    Specialized Cables AcceleRate Slim Cable Assembly, 0.635 mm Pitch
    Free Sample
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    Mouser Electronics ARC6-16-09.0-LU-LD-2-1
    • 1 $61.04
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    Samtec Inc AW-14-03-G-D-176-098

    Board to Board & Mezzanine Connectors 0.80 mm Flex Stack, Surface Mount Micro Board Stacker
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    Mouser Electronics AW-14-03-G-D-176-098
    • 1 $7.38
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    • 10000 $2.14
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    Samtec Inc ARC6-16-09.0-LU-LU-3-1

    Specialized Cables AcceleRate Slim Cable Assembly, 0.635 mm Pitch
    Free Sample
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    Mouser Electronics ARC6-16-09.0-LU-LU-3-1
    • 1 $61.04
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    Samtec Inc AW-10-03-G-D-146-097-P-TR

    Board to Board & Mezzanine Connectors 0.80 mm Flex Stack, Surface Mount Micro Board Stacker
    Free Sample
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    Mouser Electronics AW-10-03-G-D-146-097-P-TR
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    Guardian Electric Manufacturing Company A420-066092-00 (ALTERNATE: TP6X12-I-12D)

    Solenoid, Tubular, 12 VDC, Intermittent Duty | Guardian Electric A420-066092-00
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    RS A420-066092-00 (ALTERNATE: TP6X12-I-12D) Bulk 41 5 Weeks 1
    • 1 $29.57
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    609 200A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N1371

    Abstract: 323985
    Text: April 8, 1998 6DOHV5HSUHVHQWDWLYHV Australia Room 705, Bao Hua Bldg. Hua Qiang North Rd. Shenzhen Reptechnic 518031 3/36 Bydown Street 2089 T: 612.99.53.98.44 Canada K2K 2A3 T: 613.592.8910 F: 613.592.5441 Starvoy Technologies MEMEC Asia Pacific Ltd. F: 972.9.7744499


    Original     		PDF Singapo72 N1371 323985

    STR 6456

    Abstract: str f 6456 STR G 6352 STR F 6168 Johnson motor 2 607 022 013 TEL5413 str 6168 STR F 6168 31 2322 662 98011 4805
    Text: Distributors Europe Distributors ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ


    Original     		PDF

    3 phase bridge rectifier 400HZ

    Abstract: 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz
    Text: Products and Solutions Sensitron Semiconductor • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - [email protected] 143-0209 Fully Integrated Motor Controllers


    Original     		PDF AS9100 MIL-PRF-19500 MIL-PRF-38534 3 phase bridge rectifier 400HZ 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz

    8002 1025

    Abstract: JJN-300 jjn-50 JJN-30 JJN-60 JJN-150 JJN-40 JJN-10 JJN-15 JJN-25
    Text: Bussmann T-Tron® Very Fast Acting Fuses JJN Class T 300 Volts, 1-1200 Amps Dimensional Data .88" ± 0.02 3.06" (± 0.04) .41" Dia. (± 0.02) 1A to 30A .88" (± 0.02) 2.03" .88" 1.25" (± 0.04) .56" Dia. (± 0.02) 450A to 600A 35A to 60A .284" (Typ. 2)


    Original     		PDF to100A to1200A 300Vac E4273 JJN-50 JJN-250 SB04092 8002 1025 JJN-300 jjn-50 JJN-30 JJN-60 JJN-150 JJN-40 JJN-10 JJN-15 JJN-25

    500 4cr 1

    Abstract: JJN-1200 JJN-60 bussmann fuse 600 vdc 1000 amperes JJN-10 JJN-110 JJN-40 JJN-15 JJN-25 1B0083
    Text: Bussmann T-Tron® Very Fast Acting Fuses JJN Class T 300 Volts, 1-1200 Amps Dimensional Data .88" ± 0.02 3.06" (± 0.04) .41" Dia. (± 0.02) 1A to 30A .88" (± 0.02) 2.03" .88" 1.25" (± 0.04) .56" Dia. (± 0.02) 450A to 600A 35A to 60A .284" (Typ. 2)


    Original     		PDF to100A to1200 E4273 A00178 500 4cr 1 JJN-1200 JJN-60 bussmann fuse 600 vdc 1000 amperes JJN-10 JJN-110 JJN-40 JJN-15 JJN-25 1B0083

    APQ03SN80AB

    Abstract: MOSFET 800V 3A 800VVGS
    Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ03SN80AB 00V/3A APQ03SN80AB-XXM0 APQ03SN80AB MOSFET 800V 3A 800VVGS

    Untitled

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ03SN80AB 00V/3A

    DIODE FS 601

    Abstract: irf 48v mosfet
    Text: PD - 96099 IRFZ48SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.018Ω G ID = 50A† Description S Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ48SPbF EIA-418. DIODE FS 601 irf 48v mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5970A IRG4BC30FD-SPbF 20kHz EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5970A IRG4BC30FD-SPbF 20kHz

    IRF530S

    Abstract: bridge rectifier 200a irg4bc30fd-s
    Text: PD - 95970 IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-SPbF 20kHz IRF530S bridge rectifier 200a irg4bc30fd-s

    Untitled

    Abstract: No abstract text available
    Text: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-S 20kHz

    IRF530S

    Abstract: No abstract text available
    Text: PD - 95970 IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-SPbF 20kHz EIA-418. IRF530S

    VG 96929

    Abstract: IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30
    Text: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD-S 20kHz VG 96929 IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30

    PM200CSD060

    Abstract: 72 volts inverter diagram
    Text: PM200CSD060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase IGBT Inverter Output 200 Amperes/600 Volts 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO A B


    Original     		PDF PM200CSD060 Amperes/600 125oC 35oC/W PM200CSD060 72 volts inverter diagram

    500 watt power UPS circuit diagram

    Abstract: inverter protection ic 500 watt power inverter 500 watt inverter circuit diagram 450 watt circuit diagram H BRIDGE inverters circuit diagram using igbt IGBT G 1010 PM200CSD060
    Text: PM200CSD060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase IGBT Inverter Output 200 Amperes/600 Volts 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO A B


    Original     		PDF PM200CSD060 Amperes/600 125oC 35oC/W 500 watt power UPS circuit diagram inverter protection ic 500 watt power inverter 500 watt inverter circuit diagram 450 watt circuit diagram H BRIDGE inverters circuit diagram using igbt IGBT G 1010 PM200CSD060

    IRF530S

    Abstract: IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL
    Text: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET


    Original     		PDF IRFZ48 IRFZ48RSPbF IRFZ48RLPbF EIA-418. IRF530S IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

    SO 607 NH

    Abstract: 61-GY DIODE FS 607 608 diode 61gy
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device Is intended for use in


    OCR Scan     		PDF BUK464-200A BUK464-2Q0A SO 607 NH 61-GY DIODE FS 607 608 diode 61gy

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan     		PDF BUK464-200A SQT404 777ali

    Untitled

    Abstract: No abstract text available
    Text: T-13/4l-EDs Standard Profile Data D isplay Products Diffused Tinted Encapsulation • Non-Diffused Tinted Encapsulation • Water Clear Encapsulation • Electro-Optical Characteristics @TA = 25°C P art N um ber Color Peak Tint111 Wavelength Xpk nm Chip Material


    OCR Scan     		PDF T-134l-EDs Tint11 200-ER 200-ECR 200-EW 200-BR 200-G5K, 200-B1K 200-T5K

    GM5ZR01200A

    Abstract: 18198 GM5ZE01200A GM5ZG01200A GM5ZJ01200A GM5ZS01200A GM5ZV01200A IR sensor for 40khz EIAJ C-3
    Text: No. SHARP CORPORATION DG-98Y016 TECHNICAL LITERATURE FOR Light Emitting Diode MODEL No. DATE G M 5 Z R 0 1 2 Q 0 A s e r ie s 1 3 -N o v -9 8 1. These specification sheets include m aterials protected under the copyright o f Sharp Corporation "Sharp" . Please do not reproduce or cause anyone to reproduce them without Sharp's consent


    OCR Scan     		PDF DG-98Y0I6 GM5ZR01200A 13-Nov-98 PO1200A GM1ZSO1200A GM5ZS95200A 180sec 18198 GM5ZE01200A GM5ZG01200A GM5ZJ01200A GM5ZS01200A GM5ZV01200A IR sensor for 40khz EIAJ C-3

    ic str 6307

    Abstract: str 6307 str x 6456 tel5413 STR S 6307 STR 6456 STR W 5456 C STR W 5456 A aeg 645 307 080 76660
    Text: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark TEMIC Dansk Roskildevej 8-10 2620 Albert&Iund Tel: 45 43 648522 Fax: 45 43 626228 France TEMIC France Les Quadrants 3. avenue du centre B.P. 309 78054 St.-Q uentin-en-Yvelines Cedex


    OCR Scan     		PDF