Untitled
Abstract: No abstract text available
Text: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6020ENJ
SC-83)
R1102A
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Untitled
Abstract: No abstract text available
Text: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.
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R6020FNX
O-220FM
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.
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R6020FNX
O-220FM
R1102A
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mosfet 600V 20A
Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Text: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce
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releases/2008/power
mosfet 600V 20A
L084
to220sis equivalent
toshiba mosfet
TK12J60U
TK15A60U
mosfet 12A 600V
tk12d60u
TK20A60U
toshiba cmos memory camera
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R6020ENX
Abstract: No abstract text available
Text: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6020ENX
O-220FM
R1102A
R6020ENX
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020ENJ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source
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R6020ENJ
SC-83)
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP20GT60I-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A Isolated tab Industry-standard isolated package G RoHS-compliant, halogen-free
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AP20GT60I-HF-3
O-220CFM
100oC
AP20GT60AS
20GT60I
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020ENX Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V.
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R6020ENX
O-220FM
R1102A
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PDF
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R6020ENZ
Abstract: No abstract text available
Text: R6020ENZ1 Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6020ENZ1
O-247
R1102A
R6020ENZ
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R6020-ANX
Abstract: No abstract text available
Text: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6020ANX
O-220FM
R1120A
R6020-ANX
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020ENZ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6020ENZ
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6020ANX
O-220FM
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020ENZ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6020ENZ
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6020ENZ1
O-247
R1102A
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PDF
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20GT60P
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP20GT60P-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A C (tab) G Industry-standard TO-220 package C C RoHS-compliant, halogen-free
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AP20GT60P-HF-3
O-220
O-220
AP20GT60
20GT60P
20GT60P
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PDF
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ictc
Abstract: No abstract text available
Text: AP20GT60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A ▼ RoHS Compliant Product G C E VCES 600V IC 20A TO-220CFM(I)
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AP20GT60I
O-220CFM
100oC
ictc
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PDF
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C
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AP20GT60SW
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Untitled
Abstract: No abstract text available
Text: AP20GT60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A RoHS Compliant Product VCES 600V IC 20A C G C E E Absolute Maximum Ratings
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AP20GT60W
100oC
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PDF
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C
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AP20GT60SW
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Untitled
Abstract: No abstract text available
Text: AP20GT60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A ▼ RoHS Compliant Product VCES 600V IC 20A C G C G TO-3P
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AP20GT60W
100oC
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PDF
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings
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AP20GT60SW
-55tor-Emitter
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PDF
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Untitled
Abstract: No abstract text available
Text: AP20GT60P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A G C E VCES 600V IC 20A TO-220(P) C RoHS Compliant & Halogen-Free G
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AP20GT60P-HF
O-220
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PDF
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20GT60W
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP20GT60W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A C (tab) G RoHS-compliant, halogen-free C C E G TO-3P (W) E Absolute Maximum Ratings
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AP20GT60W-HF-3
AP20GT60
20GT60W
20GT60W
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PDF
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ap20gt60p
Abstract: No abstract text available
Text: AP20GT60P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A G C E VCES 600V IC 20A TO-220(P) C ▼ RoHS Compliant & Halogen-Free
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AP20GT60P-HF
O-220
ap20gt60p
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PDF
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