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    Hammond Manufacturing SKH600NCC

    HUMIDISTAT 3.5X1.5X1.8"
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    DigiKey SKH600NCC Box 1 1
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    Mouser Electronics SKH600NCC
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    Newark SKH600NCC Bulk 1
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    Moujen Switch MVS-3600-NC

    SWITCH SNP ACT SPST-NC 1.5A 230V
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    Samsung Electro-Mechanics CIC10P600NC

    FERRITE BEAD 60 OHM 0603 1LN
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    FERRITE BEAD 60 OHM 0603 1LN
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    FERRITE BEAD 60 OHM 0603 1LN
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    600NC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic ir2110

    Abstract: IR2110 IGBT IR2110 design ir2110 application MOSFET IGBT RECTIFIER IRGSI270F06 ir igbt ir2110 mosfet IGBT dv
    Text: DESIGN TIPS International Rectifier DESIGN TIPS DT 92-3AJ ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL(310) )322-3331・ ・FAX(310) )322-3332 INTERNATIONAL RECTIFIER・ コントロール IC による MOSFET および IGBT 用


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    PDF 92-3AJ -11mV/C IRGPC50FIGBT 47W10W0W IR2110 IRGSI270F06 600nC ic ir2110 IR2110 IGBT IR2110 design ir2110 application MOSFET IGBT RECTIFIER ir igbt ir2110 mosfet IGBT dv

    1N2074A

    Abstract: h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117
    Text: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD


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    PDF AN978 116ns AN-967 AN-961 AN-959 1N2074A h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117

    K06N60

    Abstract: PG-TO-263-3-2 SKB06N60
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


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    PDF SKB06N60 PG-TO-263-ain K06N60 PG-TO-263-3-2 SKB06N60

    Q67040-S4230

    Abstract: Q67040-S4231 Q67040-S4340 SKA06N60 SKB06N60 SKP06N60
    Text: SKP06N60, SKB06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


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    PDF SKP06N60, SKB06N60 SKA06N60 P-TO-220-3-1 P-TO-263-3-2 O-220AB) O-263AB) O-220, SKP06N60 Jul-02 Q67040-S4230 Q67040-S4231 Q67040-S4340 SKA06N60 SKB06N60 SKP06N60

    Q67040-S4340

    Abstract: SKA06N60
    Text: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    PDF SKA06N60 O-220, O-220-3-31 Q67040-S4340 Aug-00 Q67040-S4340 SKA06N60

    Q67040-S4230

    Abstract: SKP06N60 25E-4 Q67040-S4231 SKB06N60 mar 716
    Text: SKP06N60 SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    PDF SKP06N60 SKB06N60 O-220AB Q67040-S4230 O-263AB Q67040-S4231 Mar-00 Q67040-S4230 SKP06N60 25E-4 Q67040-S4231 SKB06N60 mar 716

    k10n60

    Abstract: SKB10N60A
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    PDF SKB10N60A SKB10N60A k10n60

    Untitled

    Abstract: No abstract text available
    Text: IHP10T120 Soft Switching Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications


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    PDF IHP10T120

    LN4148

    Abstract: 1N2074A PWM IR2112 IRF540 h bridge ir2110 555 igbt driver IR2117 IR2119 power inverter schematic diagram ir2110 IR2110 h bridge inverter ac control using ir2110 IR2110 INVERTER SCHEMATIC
    Text: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD


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    PDF AN978 116ns AN-967 AN-961 AN-959 LN4148 1N2074A PWM IR2112 IRF540 h bridge ir2110 555 igbt driver IR2117 IR2119 power inverter schematic diagram ir2110 IR2110 h bridge inverter ac control using ir2110 IR2110 INVERTER SCHEMATIC

    K10N60

    Abstract: SKB10N60A ND marking
    Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    PDF SKB10N60A P-TO-220-3-45 K10N60 SKB10N60A ND marking

    Untitled

    Abstract: No abstract text available
    Text: IHP10T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications


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    PDF IHP10T120

    k10n60

    Abstract: SKW10N60A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKP10N60A 1000NC
    Text: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


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    PDF SKP10N60A SKW10N60A PG-TO-220-3-1 PG-TO-247-3 k10n60 SKW10N60A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SKP10N60A 1000NC

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,


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    PDF SKB06N60

    SKP10N60A

    Abstract: No abstract text available
    Text: SKP10N60A Preliminary SKB10N60A, SKW10N60A Fast-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


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    PDF SKP10N60A SKB10N60A, SKW10N60A SKP10N60A SKB10N60A SKW10N60A O-220AB O-263AB O-247AC Q67040-S4458

    K06N60

    Abstract: SKA06N60 K06N60 TO-220F infineon IGBT 1000V .100A IGBT 0835 SKP06N60
    Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter


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    PDF SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, SKA06N60 K06N60 K06N60 TO-220F infineon IGBT 1000V .100A IGBT 0835

    K06N60

    Abstract: TO220 package infineon K06N60 SMD
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter


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    PDF SKB06N60 O-220, SKB06N60 K06N60 TO220 package infineon K06N60 SMD

    K06N60

    Abstract: No abstract text available
    Text: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter


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    PDF SKB06N60 O-220, SKB06N60 K06N60

    power inverter schematic diagram ir2110

    Abstract: IR2110 INVERTER SCHEMATIC Inverter IR2110 PWM IR2112 IRF540 1n2074a power inverter schematic diagram irf740 full bridge ir2110 INT978 Full-bridge IR2110 IR2110 full bridge inverter
    Text: INT978 HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD Bootstrap operation How to select the bootstrap components How to calculate the power dissipation in the MGD


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    PDF INT978 116ns AN-967 AN-961 AN-959 power inverter schematic diagram ir2110 IR2110 INVERTER SCHEMATIC Inverter IR2110 PWM IR2112 IRF540 1n2074a power inverter schematic diagram irf740 full bridge ir2110 INT978 Full-bridge IR2110 IR2110 full bridge inverter

    SKP10N60A

    Abstract: SKB10N60A SKW10N60A Q67040-S4459 Q67040-S4458 fast recovery diode 1000v 10A 100w 5a IGBT
    Text: SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


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    PDF SKP10N60A, SKB10N60A SKW10N60A P-TO-220-3-1 O-220AB) P-TO-263-3-2 P-TO-247-3-1 O-263AB) O-247AC) O-220AB SKP10N60A SKB10N60A SKW10N60A Q67040-S4459 Q67040-S4458 fast recovery diode 1000v 10A 100w 5a IGBT

    SKB10N60

    Abstract: SKP10N60 Q67040-S4217 7A, 100v fast recovery diode SKW10N60
    Text: SKP10N60 SKB10N60, SKW10N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:


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    PDF SKP10N60 SKB10N60, SKW10N60 O-220AB Q67040-S4217 SKB10N60 O-263AB Q67040-S4218 O-247AC SKB10N60 SKP10N60 Q67040-S4217 7A, 100v fast recovery diode SKW10N60

    power inverter schematic diagram ir2110

    Abstract: IR2110 INVERTER SCHEMATIC 1n 4148 zener diode DIODE LN4148 full bridge ir2110 IR2110 full bridge inverter PWM IR2112 IRF540 pin configuration IR2110 INVERTER DIAGRAM 1n2074a Inverter IR2110
    Text: Index AN-978 V. Int HV Floating MOS-Gate Driver ICs (HEXFET is a trademark of International Rectifier) Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD Bootstrap operation How to select the bootstrap components


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    PDF AN-978 116ns AN-967 AN-961 AN-959 power inverter schematic diagram ir2110 IR2110 INVERTER SCHEMATIC 1n 4148 zener diode DIODE LN4148 full bridge ir2110 IR2110 full bridge inverter PWM IR2112 IRF540 pin configuration IR2110 INVERTER DIAGRAM 1n2074a Inverter IR2110

    K06N60

    Abstract: fast recovery diode 600v 12A SKP06N60 PG-TO-220-3-1 PG-TO220-3-31 SKA06N60
    Text: SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter


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    PDF SKP06N60 SKA06N60 PG-TO-220-3-1 O-220AB) O-220, K06N60 fast recovery diode 600v 12A SKP06N60 PG-TO-220-3-1 PG-TO220-3-31 SKA06N60

    Untitled

    Abstract: No abstract text available
    Text: SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter


    Original
    PDF SKA06N60 O-220, O-220-3-31 SKA06N60 Q67040-S4340 Dec-01

    ECG1386

    Abstract: ecg1388 ECG116 tabla
    Text: PHILIPS EC G INC 17E ECG Sem iconductors o • bbsaiaa • ECG1386 8 W AF PO Features • 1 .3 3 9 3 4 .0 - • Protective circu it for load sh o rt circu it • L o w distortion rate and high im ­ p edance f5 3 2 "_- f (I3.5P| 4 • Uni-direction pins with wider spacing


    OCR Scan
    PDF T-74-05-01 ECG1386 ECG1386 ecg1388 ECG116 tabla