UPS APC RS 1500 VA service manual
Abstract: apc ups transformer 65kAIC apc ups rt 2000 SERVICE MANUAL Digital Panel Meter PM 435 DSP BASED ONLINE UPS design
Text: Uninterruptible Power Supplies Section 20 Power dependency has increased dramatically in the new business environment based on e-commerce applications, mobile networks, corporate Internet sites, e-pay and networked IT structures. Near one-hundred percent system availability is
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Text: IRG7RA13UPbF PDP TRENCH IGBT Key Parameters Features • Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability
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IRG7RA13UPbF
IGBJESD47F
JSTD020D
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Abstract: No abstract text available
Text: ACE User Guide For ACE Version 5.0 UG001 v5.0 - 5th December 2012 http://www.achronix.com Copyright Info Copyright 2006 - 2012 Achronix Semiconductor Corporation; certain portions of this guide are Copyright © 2000, 2006 IBM Corporation and others. All rights reserved. Achronix and Speedster are trademarks of
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UG001
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Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
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D260-4118-0000
Abstract: 0119A 0190A
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
D260-4118-0000
0119A
0190A
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Untitled
Abstract: No abstract text available
Text: User's Guide SLAU432 – February 2012 DAC348x EVM 1 2 3 4 5 Contents Introduction . 2 1.1 Overview . 2
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SLAU432
DAC348x
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Text: A.V Series www.vishay.com Vishay BCcomponents Axial Leaded Multilayer Ceramic Capacitors for Automotive Applications Class 1 and Class 2, 50 VDC, 100 VDC, 200 VDC FEATURES • AEC-Q200 qualified with PPAP available • High reliability MLCC insert with wet build
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AEC-Q200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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DETUNING REACTOR
Abstract: No abstract text available
Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M400 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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B44066D5075M400
B44066D
DETUNING REACTOR
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Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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B44066D5075M440
B44066D
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Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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B44066D1499M440
B44066D
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Untitled
Abstract: No abstract text available
Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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B44066D1499M440
B44066D
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D260-4118-0000
Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25GNR1
MRFE6VS25N
D260-4118-0000
MRFE6VS25L
MRFE6VS25GNR1
transistor J128
2422D
21-201-J
ATC100B2R7BT500XT
crcw12065k60f
avx c0805c103k5rac
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M27500-16RC1509
Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,
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MRFE6VP100H
MRFE6VP100HR5
MRFE6VP100HSR5
MRFE6VP100H
M27500-16RC1509
ferronics 11-750-K
11-750-K
12-365-K
UT-90-25
Micro-coax UT
m27500-16
m27500 transfer impedance
transformer mttf
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,
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MRFE6VP100H
MRFE6VP100HR5
MRFE6VP100HSR5
MRFE6VP100HR5
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ATC100B471JT200XT
Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25N
ATC100B471JT200XT
EB-38
651AT
ATC100B181JT300XT
ATC100B4R3CT500XT
CDR33BX104AKWY
C5750KF1H226ZT
Fair-Rite ATC
MRFE6VS25NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
25cale
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Untitled
Abstract: No abstract text available
Text: A Series www.vishay.com Vishay BCcomponents Axial Leaded Multilayer Ceramic Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 200 VDC, 500 VDC FEATURES • • • • High capacitance with small size High reliability Axial mounting style
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: DuroSite LED High Bay - UL for Indoor and Outdoor Industrial Applications Patent Pending DuroSite® LED High Bay Features & Benefits • 10 year full performance warranty available on specific models • 5 year full performance warranty standard • L70 rated for >100,000
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104lm/W
Catalogs/Illumination/MDEXHBX001
MDEXHBX001
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bd139 equivalent
Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
Text: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION
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BLV861
AN98033
BLV861
SCA57
bd139 equivalent
BLV862
ATC180R
philips power transistor bd139
transistor DK ql
AN98014
linear handbook
MGM734
860mhz rf amplifier circuit diagram
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Abstract: No abstract text available
Text: JESD204B PHY Layer Compliance Test Rev. 1 — 31 May 2012 White paper Document information Info Content Author s Maury Wood – General Manager, High-Speed Converters, NXP Semiconductors; Scott Ferguson – Field Digital Specialist, Agilent Technologies; Joe Evangelista – Field Applications Engineer, Agilent
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JESD204B
JESD204B
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Abstract: No abstract text available
Text: Trusted Smart Life Solutions Electronic Driving Licenses Application Introduction Q1 - 2013 Introduction to National ID • Governments introduce electronic drivers licenses to – Reduce document fraud & identity theft – Securely and simply identify drivers
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2006/126/EC
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ATC600 capacitor
Abstract: MRF7S21170HS
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21170H
MRF7S21170HR3
MRF7S21170HSR3
ATC600 capacitor
MRF7S21170HS
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"MARKING CODE BR"
Abstract: No abstract text available
Text: PJSD05MLFN2 ESD PROTECTION DIODES The PJSD05MLFN2 is designed to protect voltage sensitive components from ESD. Excellent clamping capability,low leakage,and fast response time provide best in class protection on designs that are exposed to ESD. VOLTAGE POWER
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PJSD05MLFN2
PJSD05MLFN2
2002/95/EC
IEC61249
IEC61000-4-2
IEC61000-4-4
5/50ns)
MIL-STD-750,
2010-REV
"MARKING CODE BR"
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0119A
Abstract: IC/0119A IC/IC/0119A
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21170H
MRF7S21170HR3
MRF7S21170HSR3
MRF7S21170HR3
0119A
IC/0119A
IC/IC/0119A
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