5SDF 12F2505 Search Results

5SDF 12F2505 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R5F21255SDFP#X6		Renesas Electronics Corporation	16-bit Microcontrollers with R8C CPU Core (Non Promotion)
R5F21245SDFP#V2		Renesas Electronics Corporation	16-bit Microcontrollers with R8C CPU Core (Non Promotion)
R5F21275SDFP#X6		Renesas Electronics Corporation	16-bit Microcontrollers with R8C CPU Core (Non Promotion), LQFP, /
R5F21245SDFP#X6		Renesas Electronics Corporation	16-bit Microcontrollers with R8C CPU Core (Non Promotion)
R5F21255SDFP#V2		Renesas Electronics Corporation	16-bit Microcontrollers with R8C CPU Core (Non Promotion)

5SDF 12F2505 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5SDF 12F2505 Abstract: 12F2505 dm265 Text: 5SDF 12F2505  5SDF 12F2505 Old part no. DM 818-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications  suited for GTO applications  Snubber diode  Freewheeling diode Key Parameters	Original	PDF	12F2505 1768/138a, DM/265/08b Nov-12 Nov-12 12F2505 5SDF 12F2505 dm265
5SDF12F3005 Abstract: dm265 12F3 Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195	Original	PDF	12F3005 12F3005 12F2505 1768/138a, DM/265/08a Aug-11 Aug-11 5SDF12F3005 dm265 12F3
5SDF12F3005 Abstract: dm265 Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000	Original	PDF	12F3005 12F3005 12F2505 1768/138a, DM/265/08 Jul-10 5SDF12F3005 dm265
Untitled Abstract: No abstract text available Text: 5SGS 16H3000 5SGS 16H3000 Old part no. TG 919-1600-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 600 I TAVm = 760 I TSM = 14 000	Original	PDF	16H3000 16H3000 16H2500 1768/138a, TG/170/05 Jul-10 Jul-10
Thyristor snubber Abstract: No abstract text available Text: 5SGS 12F3000 5SGS 12F3000 Old part no. TG 908-1200-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 200 I TAVm = 630 I TSM = 10 000	Original	PDF	12F3000 12F3000 12F2500 1768/138a, TG/164/05 Jul-10 Jul-10 Thyristor snubber
5SGS 16H2500 Abstract: No abstract text available Text: 5SGS 16H2500  5SGS 16H2500 Old part no. TG 919-1600-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 600 I TAVm = 760	Original	PDF	16H2500 1768/138a, TG/170/05a Sep-11 5SGS 16H2500
5SGS 12F2500 Abstract: ABB Typ RGC ITGQM GTO thyristor ABB Text: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630	Original	PDF	12F2500 1768/138a, TG/164/05b Mar-12 5SGS 12F2500 ABB Typ RGC ITGQM GTO thyristor ABB
Untitled Abstract: No abstract text available Text: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630	Original	PDF	12F2500 1768/138a, TG/164/05a Sep-11