Untitled
Abstract: No abstract text available
Text: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416V1200BT
1Mx16Bit
1Mx16
band-w25
5CK44
-TSOP2-400R
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16v1204
Abstract: C1204B KM416V1204BJ 74142 74142 NOTE
Text: KM416V1204BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1204BJ
1Mx16Bit
1Mx16
Q323tÃ
5CK44
-TSOP2-400R
825-oocÂ
35-q1q
003b2b0
16v1204
C1204B
KM416V1204BJ
74142
74142 NOTE
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16V1204
Abstract: No abstract text available
Text: KM416V1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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KM416V1204BT
1Mx16
-TSOP2-400F
5CK44
-TSOP2-400R
825-ooo<
003b2bD
16V1204
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Untitled
Abstract: No abstract text available
Text: KM416S1020C Preliminary CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .2 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.
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KM416S1020C
PC100
2K/32ms
4K/64ms.
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