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    ATF-5X143

    Abstract: ATF pHEMT resistor and inductor
    Text: 5X143C/5X143A Demo Boards for the ATF-5X143 Series Avago PHEMT Devices Applications Bulletin 107 The Avago Technologies’ 5X143C demo board is a general purpose demo board designed for amplifier applications up through several GHz. The demo board as shown in Figure 1 is built on low cost 0.031" thickness FR-4 printed circuit board material. The board


    Original     		PDF 5X143C/5X143A ATF-5X143 5X143C ATF-5XX43 OT-343 SC-70he 5988-6781EN ATF pHEMT resistor and inductor

    ATF-58143

    Abstract: GRH708 GRM40 LL2012-F ATF10236
    Text: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Agilent Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the


    Original     		PDF ATF-58143 5988-9119EN GRH708 GRM40 LL2012-F ATF10236

    ATF-58143

    Abstract: GRH708 ATF58143 LL2012-F
    Text: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Avago Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the UHF through


    Original     		PDF ATF-58143 ATF-10236 5988-9119EN GRH708 ATF58143 LL2012-F

    agilent pHEMT transistor

    Abstract: Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-55143 ATF-551M4 advanced design system
    Text: Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used


    Original     		PDF ATF-55143 ATF-55143 5988-9555EN agilent pHEMT transistor Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-551M4 advanced design system

    SOT 23 AJW

    Abstract: ATF-54143 ATF55143 ATF-55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Agilent Technologies’ ATF-55143 is a low noise enhancement mode PHEMT designed for use in low


    Original     		PDF ATF-55143 ATF-55143 5988-3399EN SOT 23 AJW ATF-54143 ATF55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    ATF-55143

    Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER SOT 23 AJW ATF-54143 ATF55143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K knife edge isolation
    Text: High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies’ ATF-55143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz


    Original     		PDF ATF-55143 ATF-55143 ATF55143 5988-3399EN 5989-3007EN agilent pHEMT transistor LNA LOW NOISE AMPLIFIER SOT 23 AJW ATF-54143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S LL1608-FH5N6K knife edge isolation

    transistor ajw

    Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143
    Text: ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high


    Original     		PDF ATF-55143 ATF-55143 AN-1281: ATF-54143 5988-9555EN transistor ajw ATF55143 Curtice AN-1222 ATF-551M4 ATF-5X143 55143

    5988-2336en

    Abstract: ATF-54143 2N2907 ATF-55143 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K LNAS11
    Text: High Intercept Low Noise Amplifier for the 1850 – 1910 MHz PCS Band using the Agilent ATF-54143 Enhancement Mode PHEMT Application Note 1222 Introduction Agilent Technologies’ ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in


    Original     		PDF ATF-54143 ATF-55143 5988-2336EN 5988-2336en ATF-54143 2N2907 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K LNAS11

    ATF-54143

    Abstract: ATF54143 GRM188R71H103KA01D LL1608-FH2N7S LL1608-FH5N6K ATF at 2.4 Ghz
    Text: ATF-54143 High Intercept Low Noise Amplifier for the 1850– 1910 MHz PCS Band using the Enhancement Mode PHEMT Application Note 1222 Introduction Avago Technologies’ ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6


    Original     		PDF ATF-54143 ATF-54143 ATF-55143 5988-4290EN 5989-2273EN ATF54143 GRM188R71H103KA01D LL1608-FH2N7S LL1608-FH5N6K ATF at 2.4 Ghz

    TRANSISTOR C815

    Abstract: equivalent transistor C5001 ATF-58143 AV02-0913EN ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S
    Text: ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the ­active device. Low cost field ­effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure 0.6


    Original     		PDF ATF-58143 900MHz ATF-58143 AN-1281: ATF54143 5989-9554EN AV02-0913EN TRANSISTOR C815 equivalent transistor C5001 ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S

    equivalent transistor C5001

    Abstract: C5001 transistor c815 transistor transistor c815 ATF581433 ATF-58143 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list
    Text: Agilent ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures


    Original     		PDF ATF-58143 ATF-58143 MTT-28, AN-1281: ATF-54143 AN-1222: equivalent transistor C5001 C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list