58N2 Search Results

58N2 Price and Stock

Filter by Manufacturer


Pulse Electronics Corporation BSCH001005058N2JCS INDUCTOR RF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSCH001005058N2JCS	Cut Tape	44,350		1	1 $0.1 10 $0.026 100 $0.0199 1000 $0.0155 10000 $0.01402	Buy Now
	BSCH001005058N2JCS	Digi-Reel	44,350		1	1 $0.1 10 $0.026 100 $0.0199 1000 $0.0155 10000 $0.01402	Buy Now
	BSCH001005058N2JCS	Reel	34,350		10,000	1 - 10 - 100 - 1000 - 10000 $0.01204	Buy Now
Mouser Electronics	BSCH001005058N2JCS		29,990			1 $0.1 10 $0.022 100 $0.017 1000 $0.014 10000 $0.01	Buy Now
Master Electronics	BSCH001005058N2JCS					1 $0.0103 10 $0.0103 100 $0.0103 1000 $0.0103 10000 $0.0103	Buy Now
Sager	BSCH001005058N2JCS				50,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Jaro Components Inc HFI-100505-8N2J FIXED IND 8.2NH 300MA 370MOHM SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HFI-100505-8N2J	Reel	20,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.15124	Buy Now
	HFI-100505-8N2J	Cut Tape	8,160		1	1 $0.17 10 $0.166 100 $0.1609 1000 $0.15601 10000 $0.1541	Buy Now
Bourns Inc CW100505-8N2J FIXED IND 8.2NH 680MA 104MOHM SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CW100505-8N2J	Cut Tape	19,090		1	1 $0.3 10 $0.233 100 $0.1813 1000 $0.14068 10000 $0.12709	Buy Now
	CW100505-8N2J	Digi-Reel	19,090		1	1 $0.3 10 $0.233 100 $0.1813 1000 $0.14068 10000 $0.12709	Buy Now
	CW100505-8N2J	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.10888	Buy Now
Mouser Electronics	CW100505-8N2J		10,000			1 - 10 - 100 - 1000 - 10000 $0.1	Buy Now
RS	CW100505-8N2J	Bulk		14 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.158	Get Quote
Avnet Abacus	CW100505-8N2J	Reel		15 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	CW100505-8N2J					1 - 10 - 100 - 1000 - 10000 $0.109	Buy Now
Pulse Electronics Corporation BSCH001005058N2JCP FIXED IND 8.2NH 300MA 240MOHM SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSCH001005058N2JCP	Cut Tape	16,305		1	1 $0.1 10 $0.026 100 $0.0199 1000 $0.0155 10000 $0.01402	Buy Now
Mouser Electronics	BSCH001005058N2JCP					1 - 10 - 100 - 1000 - 10000 $0.008	Get Quote
Maxecho Technologies Corp HBWS1005-8N2S FIXED IND 8.2NH 680MA 104MOHM SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HBWS1005-8N2S	Cut Tape	9,950		1	1 $0.24 10 $0.187 100 $0.1457 1000 $0.11304 10000 $0.10213	Buy Now
	HBWS1005-8N2S	Digi-Reel	9,950		1	1 $0.24 10 $0.187 100 $0.1457 1000 $0.11304 10000 $0.10213	Buy Now

Find more 58N2 price and stock on Findchips.com

58N2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
58N2 Abstract: 58N20 Text: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	58N20Q O-268 O-268 58N2 58N20	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet	Original	58N20Q ISOPLUS247TM 728B1	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q-Class IXFR 58N20Q VDSS = 200 V = 50 A ID25 RDS on = 40 mW trr £ 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	ISOPLUS247TM 58N20Q	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM Q-Class IXFR 58N20Q VDSS = 200 V ID25 = 50 A RDS on = 40 mW trr £ 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	Original	ISOPLUS247TM 58N20Q 247TM E153432	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	58N20Q O-268 O-268	PDF
RAS 0510 SUN HOLD Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 Text: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.	Original	mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions	Original	IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 O-268 dv/00	PDF
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET	PDF
IXFM50N20 Abstract: 50N20 IXFH50N20 IXFH58N20 42N20 58N20 IXFH42N20 IXFM42N20 58AA Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/58N20 VDSS ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions	Original	IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 IXFM50N20 50N20 IXFH50N20 IXFH58N20 42N20 58N20 IXFH42N20 IXFM42N20 58AA	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
50N20 Abstract: 42N20 DIODE N20 IXFH58N20 58N20 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH 58 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous	Original	42N20 50N20 58N20 O-204AE 50N20 42N20 DIODE N20 IXFH58N20 58N20	PDF
50n20 Abstract: IXFM50N20 Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions	Original	IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 42N20 50N20 58N20 IXFM50N20	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B	PDF

Untitled Abstract: No abstract text available Text: nixYS IXFH 58N20Q IXFT 58N20Q HiPerFET Power MOSFETs Q -Class V DSS = ^D25 D DS on — ” 200 V 58 A 40 mQ trr <200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet TO-268 (D3) (IXFT) C ase Style Maximum Ratings	OCR Scan	58N20Q 58N20Q O-268 O-247 O-268	PDF
42n20 Abstract: ixys ml 075 50N20 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083 Text: □IXYS IXFH 42N20 IXFM 42N20 HiPerFET Power MOSFETs IXFH 50N20 IXFM 50N20 IXFH/FM 42N20 IXFH/FM 50N20 IXFH 58N20 IXFH 58N20 V DSS ^D25 D DS on 200 V 200 V 200 V 42 A 50 A 58 A 60 mQ 45 m£2 40 mQ 200 ns 200 ns 200 ns N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family	OCR Scan	42N20 50N20 50N20 58N20 ixys ml 075 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFET Power MOSFETs IXFR 58N20Q ISOPLUS247™ Q Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr <200 ns Maximum Ratings Symbol Test Conditions	OCR Scan	58N20Q ISOPLUS247TM Cto150 247TM 00A/ns	PDF
58N20 Abstract: IXFH58N20 50n20 Text: EUXYS VDSS HiPerFET Power MOSFETs IXFH/IXFT 50N20 IXFH 58N20 200 V 200 V Symbol Test Conditions Maximum Ratings VDSS T j =25°C to150°C 200 V V TCR Tj = 25° C to 150° C; RQS= 1 200 V Vos Continuous ±20 V v GSM Transient ±30 V 50 58 200 232 50 58 A	OCR Scan	50N20 58N20 to150 58N20 O-247 IXFH58N20	PDF
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS	PDF
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
SMD diode N20 Abstract: IXFH58N20 30n20 Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2	OCR Scan	IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20	PDF
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60	PDF
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q Class = 200 V = 50 A D25 R DS on = 40 mQ 58N20Q V,DSS (Electrically Isolated Back Surface) trr < 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	OCR Scan	ISOPLUS247â IXFR58N20Q	PDF

58N2 Search Results

58N2 Price and Stock

Pulse Electronics Corporation BSCH001005058N2JCS

Jaro Components Inc HFI-100505-8N2J

Bourns Inc CW100505-8N2J

Pulse Electronics Corporation BSCH001005058N2JCP

Maxecho Technologies Corp HBWS1005-8N2S

58N2 Datasheets Context Search

58N2

Untitled

Untitled

Untitled

Untitled

RAS 0510 SUN HOLD

Untitled

transistor 12n60c

IXFM50N20

C1162

50N20

50n20

sd 20n60

75N1

Untitled

42n20

Untitled

58N20

mosfet 4400

12N60c equivalent

40n80

SMD diode N20

ixys ixfn 55n50

Untitled