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Broadcom Limited ATF-531P8-BLK RF MOSFET E-PHEMT 4V 8LPCC
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Broadcom Limited ATF-531P8-TR2 RF MOSFET E-PHEMT 4V 8LPCC
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Broadcom Limited ATF-531P8-TR1 RF MOSFET E-PHEMT 4V 8LPCC
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DigiKey	ATF-531P8-TR1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Seiko Epson Corporation SG-531P-8.1920MC XTAL OSC XO 8.1920MHZ CMOS TTL
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DigiKey	SG-531P-8.1920MC	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Seiko Epson Corporation SG-531P-8.0000MC XTAL OSC XO 8.0000MHZ CMOS TTL
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DigiKey	SG-531P-8.0000MC	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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531P8 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ATF-531P8 Abstract: AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89 Text: Agilent ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a	Original	ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89	PDF
ATF-531P8 Abstract: ATF-521P8 ATF531P8 BCV62B 0805ZC105KATZA RK73H1J68R1F Text: Low Noise and High Linearity Applications using the Agilent ATF-531P8 Application Note 1320 Introduction Agilent Technologies’ ATF-531P8 is an enhancement mode PHEMT designed for low noise and high linearity applications. With a noise figure of 1.16 dB and OIP3 of 40 dBm, ATF-531P8 is well suited as a	Original	ATF-531P8 ATF-531P8 5988-8237EN ATF-521P8 ATF531P8 BCV62B 0805ZC105KATZA RK73H1J68R1F	PDF
agilent pHEMT transistor Abstract: transistor C715 ATF-531P8 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Text: Agilent ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used	Original	ATF-531P8 ATF-531P8 5988-9545EN agilent pHEMT transistor transistor C715 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER	PDF
150526 Abstract: sf128 Text: ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Agilent Technologies’s ATF‑531P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier LPCC [3]	Original	ATF-531P8 ATF531P8 5988-8407EN 5988-9990EN 150526 sf128	PDF
03311704 Abstract: ATF-531P8 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AV02-0845EN 133443 89829 0845en Text: ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Avago Technologies’ ATF‑531P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC [3] package.	Original	ATF-531P8 ATF531P8 5988-9990EN AV02-0845EN 03311704 ATF-531P8 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 133443 89829 0845en	PDF
Untitled Abstract: No abstract text available Text: Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description	Original	ATF-531P8 5988-7935EN	PDF
transistor C715 Abstract: ATF-531P8 ATF531 AN-1222 ATF531P83 ATF-54143 BCV62C fet curtice mesfet fet Text: ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high	Original	ATF-531P8 AN-1281: ATF-54143 5988-9545EN transistor C715 ATF531 AN-1222 ATF531P83 BCV62C fet curtice mesfet fet	PDF
ATF-531P8 Abstract: No abstract text available Text: Agilent ATF-531P8 Reliability Data Sheet Introduction Reliability Prediction Model The ATF-531P8 is fabricated with Agilent Technologies’ new PHEMT C process. This process has been qualified at wafer level and a similar robustness was observed compared to other	Original	ATF-531P8 ATF-531P8 JESD22-A113-A 5988-7962EN	PDF
ATF-531P8 Abstract: No abstract text available Text: ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Agilent Technologies’s ATF‑531P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier LPCC [3]	Original	ATF-531P8 ATF531P8 5988-9990EN AV02-0845EN ATF-531P8	PDF
C882 TRANSISTOR Abstract: ATF-531P8 Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers Text: ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a typical gain of 22 dB	Original	ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN C882 TRANSISTOR Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers	PDF
ATF-531P8 Abstract: ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AMPLI 741 low noise high frequency HEMT from agilent Text: ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Agilent Technologies’s ATF‑531P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC [3] package.	Original	ATF-531P8 ATF531P8 5988-9990EN AV02-0845EN ATF-531P8 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AMPLI 741 low noise high frequency HEMT from agilent	PDF
ATF-531P8-BLK Abstract: ATF-531P8-TR1 ATF-531P8 ATF-531P8-TR2 MO229 0840 057 OIP350 marking 0836 atf531p8 atf531 Text: Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description	Original	ATF-531P8 5988-8407EN 5988-9990EN ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 0840 057 OIP350 marking 0836 atf531p8 atf531	PDF
LL1608-FSR15J Abstract: MCR01J000 IIP31 ATF-531P8 Tower Mounted Amplifiers Schematic 0805ZC105KATZA 0402CG189C9B200 ATF-521P8 BCV62B 630-007 Text: ATF-531P8 1900 MHz High Linearity Amplifier Application Note 1320 Introduction Avago Technologies’ ATF-531P8 is an enhancement mode PHEMT designed for low noise and high linearity applications. With a noise figure of 1.16 dB and OIP3 of 40 dBm, ATF-531P8	Original	ATF-531P8 ATF-531P8 138dBm 43dBm 38dBm LL1608-FSR15J MCR01J000 IIP31 Tower Mounted Amplifiers Schematic 0805ZC105KATZA 0402CG189C9B200 ATF-521P8 BCV62B 630-007	PDF
wn 2308 Abstract: ATF-531P8 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AT-2 03-rf 048 Text: Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description	Original	ATF-531P8 5988-7935EN 5988-8407EN wn 2308 ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 AT-2 03-rf 048	PDF