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    531 OPTO Search Results

    531 OPTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DLP3030AFYJQ1 Texas Instruments Optoelectronic Device Visit Texas Instruments
    TLP3475W Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation

    531 OPTO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RS631

    Abstract: circuit capacitive level transmitter nn17 f6351
    Text: Issued March 1986 F6351 20mA current loop opto-isolator Stock numbers 631-531 and 631-547 The RS 631-531 is equivalent to the HCPL4100 The RS 631-547 is equivalent to the HCPL4200 Two opto isolators, transmitter 631-531 and receiver 631-547, designed specifically for digital 020mA current loop applications. The opto isolators


    Original     		PDF F6351 HCPL4100 HCPL4200 LM334 RS631 circuit capacitive level transmitter nn17 f6351

    c1166

    Abstract: C5804 C2516A C1188 c2555 RG6 coaxial cable C2543A C0454A C2536A.41.10 354-37
    Text: 531-2012:QuarkCatalogTempNew 8/23/12 11:10 AM Page 531 3 Electronic Communication and Coaxial Cable ᭤ RoHS Compliant Directive 2002/95/EC ᭤ Impact- and Abrasion-Resistant RoHS ᭤ Stranded Conductors for Superior Flexibility ᭤ Designed to Meet UL VW-1 Vertical Wire Flame Test


    Original     		PDF 2002/95/EC C2524A C2534A C2514A RG-59/U C8028 C3500 c1166 C5804 C2516A C1188 c2555 RG6 coaxial cable C2543A C0454A C2536A.41.10 354-37

    7 segment display 542

    Abstract: 7-segment 4 digit 5461 din 74 Pt100-sensor display de 7 segmentos AFFICHEUR sonde pt100 PT100 temperature sensor of temperatur DC334
    Text: CODIX 531 für Widerstands-Thermometer Pt100, Ni100 deutsch Digitalanzeige for resitance thermometers Pt100, Ni100 english Digital display Afficheur digital Pt100, Ni100 français pour thermomètres à résistance Visualizador digital Visualizzatore digitale


    Original     		PDF Pt100, Ni100 7 segment display 542 7-segment 4 digit 5461 din 74 Pt100-sensor display de 7 segmentos AFFICHEUR sonde pt100 PT100 temperature sensor of temperatur DC334

    ATEX 2033

    Abstract: optokoppler
    Text: 04-MÄR-2003 15:41 PTB FB. 3.4 EX-SCHUTZ Physikalisch-Technische +49 531 592 3405 S.01 Bundesanstalt Braunsehweigund Berlin Telefax Bittesofortweiterleiten! Bei fehlerhafter übermittlung In the CBSOoffauliy fepttlducrlon. 1 Anzahl Seiten einschi. Deckblatt :


    Original     		PDF R-2003 BundesalJee100 OptokopplerCNY85 ATEX 2033 optokoppler

    rel 531

    Abstract: step down transformer 6-0-6 abb REL531 RTXP 18 cutout ABB brc 410 REL531 Broken Conductor Detection for Overhead Line Distribution System IEC 255-3 earth fault relay with 4 ct detect abb multiplexer
    Text: Line distance protection terminal REL 531*2.0 1MRK 606 005-BEN Page 1 May 2002 Changed since October 1998 Data subject to change without notice SE 95 02 15 Features • Line distance functionality comprises; - simultaneous measurement of the different phase - phase and phase - earth


    Original     		PDF 005-BEN 003-BEN 005-UEN 004-REN 057-BEN 014-BEN 056-BEN SE-721 rel 531 step down transformer 6-0-6 abb REL531 RTXP 18 cutout ABB brc 410 REL531 Broken Conductor Detection for Overhead Line Distribution System IEC 255-3 earth fault relay with 4 ct detect abb multiplexer

    T318

    Abstract: No abstract text available
    Text: DATE REVISIONS REV DRAWING NUMBER REV SSL-LX100133XX 9.6 .386 DIA. 11.5 (.453) 13.5 (.531) 1 (.04) MAX 25.4 (1.00) MIN 27 (1.063) MIN RELIABILITY NOTE: OUR MANY YEARS OF EXPERIENCE DATA ACCUMULATION INDICATE AND THAT SOLDER HEAT IS A MAJOR CAUSE OF EARLY


    Original     		PDF SSL-LX100133XX T318

    REL531

    Abstract: rel 531 abb REL531 microcontroller based substation monitoring using pulse echo in power cable fault locator REL531 application microcontroller based substation monitoring using with parameters 3 pole circuit breaker ABB microcontroller based substation monitoring and c REL521
    Text: REL 531 * 1.0 Line di:stance protection 1 MAK 506 004-BEN Page' Oclober 1997 Changed since April 1997 Dala subjecl to change wilhoul nolice terminal ABB Network Partner SE 95 02 15 \ I Features .Simultaneous measurement of the phasephase and phase-earth loop impedances with in


    Original     		PDF 004-BEN diske11e 004-UEN 007-M 314-GA 077-0B 078-AA 876-KA 004-\UEN 476-AA REL531 rel 531 abb REL531 microcontroller based substation monitoring using pulse echo in power cable fault locator REL531 application microcontroller based substation monitoring using with parameters 3 pole circuit breaker ABB microcontroller based substation monitoring and c REL521

    3AMC

    Abstract: SSL-LX30FT2GD
    Text: DATE I REVI5KJN5 I 1 1 2 .5 13 .5 <.531 MIN .5 .0 2 0 ) TYP JL .4 9 2 ) MIN. ;a t h o d e UNIT: m m (INCHES) TOLERANCE: ± 0 .2 (-0 0 8 ] RELIABILITY NOTE DUR MANY YEARS OF EXPERIENCE DATA ACCUMULATION INDICATE THAT SOLDER HEAT IS A MAOOR CAUSE OF EARLY AND FUTURE


    OCR Scan     		PDF PR0CE55, LX30FT2GD SSL-LX30FT2GD 3AMC

    Untitled

    Abstract: No abstract text available
    Text: FILn M I C R O E L E C T R O N I C S I 4SE D • 3S75745 F IL M M IC R O E L E C T R O N IC S IN C . IOB Centennial Drive, Peabody MA 01960, USA . TEL 508 531-8901 FAX (508) 532-9954 □ □ □ □ 1 7 1 T7T ■ FLMfT s o l id s t a t e r e l a y (SPST/NO)


    OCR Scan     		PDF 3S75745 MIL-STD-883 MIL-R-28750

    relay 6v 100 ohm

    Abstract: DDD017Z MIL-R-28750 FET 125DegC
    Text: FILn M I C R O E L E C T R O N I C S I M5E D 3S 7S 745 □□□□ !?! T7T • F IL M M IC R O E L E C T R O N IC S IN C . The Ultim ate In Microelectronic Packaging and Interconnect Technology JOB C e n te rin g Drive, Peabody M A 0 9 6 0 , USA * TEL 508) 531-8901 FAX (508) 5 3 2 -9 95 4


    OCR Scan     		PDF 3S7S745 MILSTD-1772 MIL-STD-883 MIL-R-28750 100TYP. relay 6v 100 ohm DDD017Z MIL-R-28750 FET 125DegC

    2N5779

    Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5779 L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327

    L14F1 npn photo transistor

    Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25

    ssl55c

    Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 ssl55c photo transistor 2n5777 2N5779 PHOTO DIODE LED55C L14F1 H74A1

    2N5777 equivalent

    Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 equivalent transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent color sensitive PHOTO TRANSISTOR

    2n5777 phototransistor

    Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2n5777 phototransistor L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2

    H15A1

    Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 H15A1 H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 L14F2

    L14F1 npn photo transistor

    Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1

    L14F1 phototransistor

    Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 phototransistor L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator 2N5777 A3-H11 2N5778 L14G3

    photo transistor 2n5777

    Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 photo transistor 2n5777 L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1

    PHOTO DIODE LED55C

    Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 PHOTO DIODE LED55C ssl55c photo transistor L14F1 ssl55b SSL55CF Direct replacement for ssl55c

    L14H2

    Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14H2 L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3

    opto isolator 4n35

    Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 opto isolator 4n35 GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 L14G1 phototransistor

    Phototransistor L14G3 application

    Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
    Text: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 Phototransistor L14G3 application L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777

    TLP 817

    Abstract: moc 641 CNY 817 TLP 621 TOSHIBA NEC ps2401 TLP766J MOTOROLA moc cny 57 moc 410 optokoppler
    Text: Optokoppler Optocouplers Vergleichsliste Cross reference D iese Liste erhebt keinen A n sp ru ch auf V ollstän dig keit, im Einzelfall bitte die e n tsp re ch e n d e n D a te nb lätter ve rg le ich e n . (This list do es not cla im be in g com p le te , therefore,


    OCR Scan     		PDF IL420 IL400 IL250 IL252 LTK-702 TLP 817 moc 641 CNY 817 TLP 621 TOSHIBA NEC ps2401 TLP766J MOTOROLA moc cny 57 moc 410 optokoppler