30192
Abstract: 30191 2SC4412 EN3019
Text: Ordering number:EN3019 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.0pF typ).
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EN3019
2SC4412
VCEO300V)
2018B
2SC4412]
30192
30191
2SC4412
EN3019
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ENN3011
Abstract: No abstract text available
Text: Ordering number:ENN3011 PNP Epitaxial Planar Silicon Transistors 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
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ENN3011
2SA1682
VCEO300V)
2018B
2SA1682]
ENN3011
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2SA1683
Abstract: EN3012
Text: Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.
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EN3012
2SA1683/2SC4414
2SA1683/2SC4414]
2SA1683
2SA1683
EN3012
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2SA1687
Abstract: 2SC4446 EN3013 d 2059
Text: Ordering number:EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Very small-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.
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EN3013
2SA1687/2SC4446
2SA1687/
2SC4446-applied
2SA1687/2SC4446]
2SA1687
2SA1687
2SC4446
EN3013
d 2059
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2SA1682
Abstract: ITR04075 ITR04076
Text: 2SA1682 Ordering number : EN3011B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features • • • • High breakdown voltage VCEO≥300V . Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
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2SA1682
EN3011B
VCEO300V)
2SA1682
ITR04075
ITR04076
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2SA1683
Abstract: N1003 2SC4414 ITR04083 ITR04084 ITR04085
Text: Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.
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ENN3012
2SA1683/2SC4414
2SA1683/2SC4414]
2SA1683
2SA1683
N1003
2SC4414
ITR04083
ITR04084
ITR04085
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EN3011
Abstract: marking CS
Text: 2SA1682 Ordering number : EN3011A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features • • • • High breakdown voltage VCEO≥300V . Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
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EN3011A
2SA1682
VCEO300V)
EN3011
marking CS
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2SC4412
Abstract: ITR06793 ITR06794 ITR06795 ITR06796 ITR06797 ITR06798 30191
Text: Ordering number : ENN3019B 2SC4412 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection High-Voltage Driver Applications Features • • • Package Dimensions High breakdown voltage VCEO≥300V . Small reverse transfer capacitance and excellent high
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ENN3019B
2SC4412
VCEO300V)
2018B
2SC4412]
2SC4412
ITR06793
ITR06794
ITR06795
ITR06796
ITR06797
ITR06798
30191
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Mys 99 178
Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Text: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B
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AA994896G
2A-M18KS08-WP-C1
1234C
11PFA
14PFA
1001D
VAP21001C
VAP21004H
VAP21015C
2001G
Mys 99 178
MYS 99
cj1w-cort21
NT31C-ST143-Ev3
MYS 99 133
E5CS-R1KJ
8203-M
TL-X1R
4503m
st MYS 99 102
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2SA1687
Abstract: 2SC4446 ITR04116
Text: Ordering number:ENN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2059B [2SA1687/2SC4446] 0.425 • Ultrasmall-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.
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ENN3013
2SA1687/2SC4446
2059B
2SA1687/2SC4446]
2SA1687/
2SC4446-applied
2SA1687
2SA1687
2SC4446
ITR04116
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2059B [2SA1687/2SC4446] 0.425 • Ultrasmall-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.
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ENN3013
2SA1687/2SC4446
2SA1687/
2SC4446-applied
2059B
2SA1687/2SC4446]
2SA1687
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2SA1682
Abstract: EN3011 marking C.S marking CS
Text: Ordering number:EN3011 PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency chacateristic (Cre : 1.5pF typ).
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EN3011
2SA1682
VCEO300V)
2SA1682]
2SA1682
EN3011
marking C.S
marking CS
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30191
Abstract: 30192 2SC4412
Text: Ordering number: EN 3019 2SC4412 No.3019 NPN Triple Diffused Planar Silicon Transistor SA\YO i TV Camera Deflection, High-Voltage Driver Applications Features . High breakdown voltage Vqeo —300V • Small reverse transfer capacitance and excellent high frequency characteristic (cre: l.OpF typ)
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2SC4412
30191
30192
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pa 2030a
Abstract: cp 035 sanyo NPN S2e 2SC4412 Marking transistor 3019 Transistor
Text: SA NY O S E M I C O N D U C T O R 25E D CORP 7T= 707b 0 0 Q 7 0 3 7 b T -3H 7 2SC4412 ^ N PN Triple Diffused Planar Silicon Transistor 2018 A TV Camera Deflection, High-Voltage Driver Applications D3019 F e a tu r e s . H igh breakdow n voltage (V c e o —300V)
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1707b
00Q7037
2SC4412
pa 2030a
cp 035 sanyo
NPN S2e
Marking transistor
3019 Transistor
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR SEE CORP 2SA1687, 2SC4446 7=H707b D Q0Q75T7 T T -29-/5 # P N P /N PN Epitaxial Planar Silicon Transistors 2 059 Low<Frequency General-Purpose Amp Applications High V iEBO 3013 F e a tu re s . V ery sm all-sized package p erm ittin g th e 2SA1687/2SC4446-applied sets to be m ade sm all a n d slim
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2SA1687,
2SC4446
H707b
Q0Q75T7
2SA1687/2SC4446-applied
2SA1687
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pa 2030a
Abstract: 2SA1682
Text: SANYO SEMICONDUCTOR S5E CORP D 7 cH 7 Q 7 t i O O 07 □ E ñ S 2SA1682 r - 5 /- /7 P N P Epitaxial P ia n a r S ilico n T ran sis to r 2018A TV Camera Deflection, High-Voltage Driver Applications 3011 F e a tu re s . H igh breakdow n voltage V q eo —300V
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00Q702Ã
2SA1682
T-31-/7
pa 2030a
2SA1682
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SA1683
Abstract: A1683 SA168 2SA1683 CS19 SA16 5C44
Text: Ordering number : EN 3Q12 i 2SA1683/2SC4414 No.3012 PNP/NPN Epitaxial Planar Silicon Transistors SA YYO i Low-Frequency General-Purpose Amp, Low-Frequency Power Amp Applications Features •Adoption of FBET process ■High breakdown voltage : Vqeo > 80V : 2SA1683
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2SA1683/2SC4414
2SA1683
SA1683
A1683
SA168
CS19
SA16
5C44
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2SA1687
Abstract: 2SC4446 SC44 TE 30132 HAB 20-S 2SA168
Text: Ordering n u m b e r:EN 3 0 1 3 2SA1687/2SC4446 No.3013 PNP/NPN Epitaxial Planar Silicon Transistors SAßiYO i Low-Frequency General-Purpose Amp Applications F eatu re s . Very small-sized package permitting the 2SAl687/2SC4446-applied sets to be made small and slim
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2SA1687/2SC4446
2SAl687/2SC4446-applied
2SA1687
2SA1687
2SC4446
SC44
TE 30132
HAB 20-S
2SA168
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN 3011 N o.3011 _ 2 S A 1 6 8 2 PN P E pitaxial P lan ar Silicon T ransistor SAMVO i TV Camera Deflection, High-Voltage Driver Applications F e a tu r e s . High breakdow n voltage Vqeo ^ 3 0 0 V • Sm all reverse tran sfer capacitance and excellent high frequency characteristic (cre: 1.5pF ty p )
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marking rsed
Abstract: No abstract text available
Text: Ordering number : EN 3 0 1 3 2SA1687/2SC4446 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp Applications F e a tu re s . Very small-sized package perm itting the 2SA1687/2SC4446-applied sets to be made small and slim • High Vebo
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2SA1687/2SC4446
2SA1687/2SC4446-applied
2SA1687
2SC4446
marking rsed
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DD15S30
Abstract: 2SA1683 60V PNP TO-92 DD15S
Text: Ordering number: EN 3 0 1 2 2SA1683/2SC4414 No.3012 PNP/NPN Epitaxial P lanar Silicon Transistors SA X YO i Low-Frequency General-Purpose Amp, Low-Frequency Power Amp Applications F e a tu re s - Adoption of FBET process • High breakdown voltage: Vceo > 80V
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2SA1683/2SC4414
2SA1683
2034/2034A
SC-43
7tlt17D7b
DD15S30
2SA1683
60V PNP TO-92
DD15S
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