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    518 MOSFET Search Results

    518 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    518 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DC518

    Abstract: LTC3704 BE 66a DC-518
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 518 SLIC POSITIVE INPUT TO NEGATIVE OUTPUT DC/DC CONVERTER LTC3704 DESCRIPTION Demonstration circuit 518 is a positive input to negative output SLIC Subscriber Line Interface Circuit converter featuring the LTC3704 switching controller. DC518 converts 4.5V to 15V input


    Original     		PDF LTC3704 LTC3704 DC518 200mA 200kHz BE 66a DC-518

    Vishay Dale RN60D

    Abstract: dale rn60c CECC40401 rlr05 CECC40101 Vishay Dale RN55D RLR20 cecc40101-806 RLR62 cecc40101-806 s
    Text: MIL- R -10 5 0 9 MIL- P R F - 2 2 6 8 4 MIL- P R F - 3 9 0 17 MIL- P R F - 5 518 2 C C E C 4 0 10 1 - 8 0 6 w w w. v i s h a y. c o m Selector Guide military film leaded resistors r e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Military Film Leaded Resistors


    Original     		PDF MIL-PRF-39017, MIL-PRF-55182, MIL-PRF-22684 MIL-R-10509 VMN-SG2018-0609 Vishay Dale RN60D dale rn60c CECC40401 rlr05 CECC40101 Vishay Dale RN55D RLR20 cecc40101-806 RLR62 cecc40101-806 s

    *f6p02

    Abstract: NTMS4700NR2
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 12 6.5 2 NTMD6N02 Max Rating Config. Page No. D 758


    Original     		PDF NTMD2P01 NTMS10P02 NTMS5P02 NTMD6P02 MMSF3P028* NTMD6N02 NTMS4N01 MMDF3N02HD NTMS4503N NTMS4700NR2 *f6p02

    KMA5D2N30XA

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMA5D2N30XA TECHNICAL DATA N-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook


    Original     		PDF KMA5D2N30XA Width300, KMA5D2N30XA

    TC 2608

    Abstract: JESD97 STRH100N6FSY1
    Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH100N6FSY1 STRH100N6FSY3 O-254AA 34Mev/cm TC 2608 JESD97 STRH100N6FSY1

    1128 marking

    Abstract: JESD97
    Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH100N6FSY1 STRH100N6FSY3 O-254AA 34Mev/cm 1128 marking JESD97

    mosfet 0018

    Abstract: SiE802DF
    Text: SPICE Device Model SiE802DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SiE802DF 18-Jul-08 mosfet 0018

    TO-247 Package

    Abstract: No abstract text available
    Text: APT5020BLC 500V 26A 0.200 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5020BLC O-247 O-247 MIL-STD-750 TO-247 Package

    MOSFET Module 100v 1200A

    Abstract: No abstract text available
    Text: APTC60AM35SCT Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 35mΩ Ω max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		PDF APTC60AM35SCT MOSFET Module 100v 1200A

    IRF540N

    Abstract: MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N
    Text: Power MOSFET SPICE and Thermal Models TM Features • • • • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation


    Original     		PDF HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 IRF540N MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N

    LMC7301

    Abstract: LM338 model SPICE Step-Down Voltage Regulator smd 5pin ic VARIABLE POWER SUPPLY. 0 - 30V, LM723 LM338 spice 6v battery charger lm317 automatic LM338 TO-3 spice model diode smd marking BUF GP 750 LM4560 LM358 vs LM741
    Text: Linear/Mixed-Signal Designer’s Guide February 1999  Welcome to National Semiconductor’s February 1999 Edition of the Linear/Mixed-Signal Designer’s Guide! Included in this guide are: • • • • • Alphanumeric index Product selection trees Product selection guides


    Original     		PDF S-12123 LMC7301 LM338 model SPICE Step-Down Voltage Regulator smd 5pin ic VARIABLE POWER SUPPLY. 0 - 30V, LM723 LM338 spice 6v battery charger lm317 automatic LM338 TO-3 spice model diode smd marking BUF GP 750 LM4560 LM358 vs LM741

    VARIABLE POWER SUPPLY. 0 - 30V, LM723

    Abstract: LM741 audio amplifiers IC LM741 timer circuit diagram lm35 sensor interfacing with adc0808 diagram LM338 TO-3 spice model LM741 AND LM386 Audio Amplifier lm1485 LM1084 spice LF351 op-amp audio equalizer smd code marking 162 sot23-5
    Text: Welcome to National Semiconductor’s Summer 2000 Edition of the Linear/Mixed-Signal Designer’s Guide! Included in this guide are: • • • • • Alphanumeric index Product selection trees Product selection guides Package descriptions CD-ROM with complete datasheets, a pdf version of this guide, and other valuable information


    Original     		PDF

    din IEC 68

    Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
    Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN917 Dual-Channel LITTLE FOOT 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance 175 °C Rated Part INTRODUCTION The new dual 6-pin SC-70 package with a copper leadframe


    Original     		PDF AN917 SC-70 laySx15xxEEH SC70-6 15-Apr-13

    1RFD210

    Abstract: IRFD210
    Text: International [rag Rectifier PD-9.386G IRFD210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = 2 0 0 V


    OCR Scan     		PDF IRFD210 1RFD210

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    Untitled

    Abstract: No abstract text available
    Text: SÌ6965DQ Vishay Siliconix P-Channel 2.5-V G-S Battery Switch New Product Ros{on) (f ì ) I d (AJ 0.035 @ VGs = -4 -5 V ±5 .0 0.060 @ VGS = -2 .5 V ±3.9 vos m -2 0 TSSOP-8 Top View P-Channel MOSFET P-Channel MOSFET • m ■ ■ ■ ■ ■ ■ 1 SYMBOL


    OCR Scan     		PDF 6965DQ i6965DQ S-56943-- 02-Nov-98

    MOSFET 800V 10A

    Abstract: ssf10n80a Tc-25-t
    Text: SSF10N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 800V


    OCR Scan     		PDF SSF10N80A MOSFET 800V 10A ssf10n80a Tc-25-t

    Untitled

    Abstract: No abstract text available
    Text: IRF710A Advanced Power MOSFET FEATURES BV Ds s = 4 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jJA Max. @ VDS= 400V Low RDS(ON) : 2.815 £2 (Typ.)


    OCR Scan     		PDF IRF710A

    Untitled

    Abstract: No abstract text available
    Text: IRLR020/024 IRLU020/024 N-CHANNEL LOGIC LEVEL MOSFET FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRLR020/024 IRLU020/024 IRLR024/IRLU024 IRLR020/IRLU020

    74142

    Abstract: SSF10N80A 115U ssv 620 00401ST
    Text: SSF10N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA Max. @ V ^ = 800V


    OCR Scan     		PDF SSF10N80A 00401ST 003b333 003b33M D03b335 74142 SSF10N80A 115U ssv 620

    ld18a

    Abstract: IRLIZ44G
    Text: PD-9.849 International SS Rectifier IRLIZ44G HEXFET Power MOSFET • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling


    OCR Scan     		PDF IRLIZ44G O-220 ld18a IRLIZ44G

    Untitled

    Abstract: No abstract text available
    Text: ¡n HARRIS I j U S E M I C O N D U C T O R FRK9150D, FRK9150R, FFÌf 9150H 26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -100V, RDS(on = 0.125£i TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRK9150D, FRK9150R, 9150H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    SSP2N90

    Abstract: 123456789
    Text: N-CHANNEL POWER MOSFETS SSP2N90 FEATURES • L o w e r R ds ON • Improved inductive ruggedness • Fast switching times • Rugged polysiiicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSP2N90 SSP2N90 CI20435 123456789