Hitachi DSA001652
Abstract: No abstract text available
Text: HVM17 Variable Capacitance Diode for FM tuner ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.
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HVM17
ADE-208-087B
50min)
SC-59A
Hitachi DSA001652
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PDF
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2SC3519
Abstract: 2SC3519A transistor 2sc3519 2SA1386
Text: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A
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2SC3519/3519A
2SA1386/A)
2SC3519A
100max
160min
180min
50min
50typ
250typ
2SC3519
2SC3519A
transistor 2sc3519
2SA1386
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PDF
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2SC4467
Abstract: transistor 2SC4467 2SA1694
Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A
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2SC4467
2SA1694)
MT-100
10max
50min
20typ
200typ
100ms
2SC4467
transistor 2SC4467
2SA1694
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PDF
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2SC4065
Abstract: TRANSISTOR SE 135
Text: Power Transistor 2SC4065 ICBO IEBO V BR CEO hFE VCE (sat) VFEC fT COB (Ta=25ºC) Unit µA mA V Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5
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2SC4065
100max
60max
60min
50min
35max
24typ
180typ
2SC4065
TRANSISTOR SE 135
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PDF
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2SA1386
Abstract: 2SA1386A 1386A transistor 2sc3519 DSA0016503 transistor 2sa1386
Text: 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3519/A –180 V(BR)CEO –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=–5A, IB=–0.5A –2.0max Tj Tstg 150 °C fT VCE=–12V, IE=2A
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2SA1386/1386A
2SC3519/A)
100max
180min
160min
50min
40typ
500typ
2SA1386
2SA1386
2SA1386A
1386A
transistor 2sc3519
DSA0016503
transistor 2sa1386
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PDF
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2SC3856
Abstract: 2SA1492 2SA1492 2SC3856 DSA0016508
Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C)
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2SC3856
2SA1492)
MT-100
100max
180min
50min
20typ
300typ
2SC3856
2SA1492
2SA1492 2SC3856
DSA0016508
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PDF
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2SC5101
Abstract: 2SA1909 DSA0016511
Text: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A
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2SC5101
2SA1909)
FM100
10max
140min
50min
20typ
250typ
2SC5101
2SA1909
DSA0016511
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PDF
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2SA1746
Abstract: DSA0016504
Text: 2SA1746 LOW VCE sat Silicon PNP Epitaxial Planar Transistor V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –50min V –12(Pulse–20) A hFE 50min VCE=–1V, IC=–5A IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max PC 60(Tc=25°C) W VBE(sat)
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2SA1746
10max
50min
25typ
400typ
FM100
2SA1746
DSA0016504
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PDF
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2SC4467
Abstract: 2SA1694 2sa1694 2sc4467 DSA0016509
Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A
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Original
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2SC4467
2SA1694)
MT-100
10max
50min
20typ
200typ
100ms
120min
2SC4467
2SA1694
2sa1694 2sc4467
DSA0016509
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PDF
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2SC3519
Abstract: 2SC3519A SE140 2SA1386 c 3519a DSA0016507
Text: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A V VCB= VEBO 5 V IEBO IC 15 A V(BR)CEO IB 4 A hFE PC 130(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=10V, f=1MHz 180 160 V 50min∗ IC=5A, IB=0.5A 2.0max V
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2SC3519/3519A
2SA1386/A)
180min
160min
50typ
250typ
45typ
50min
100max
MT-100
2SC3519
2SC3519A
SE140
2SA1386
c 3519a
DSA0016507
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB4R7M Features Item Summary 4.7 H ±20% , 4A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)
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LHL10TB4R7M
50min,
500pcs
96MHz
50min
38MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB5R6M Features Item Summary 5.6 H ±20% , 3.8A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)
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LHL10TB5R6M
50min,
500pcs
96MHz
50min
34MHz
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PDF
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2SA1725
Abstract: 2SC4511 FM20 2sa1725 transistor
Text: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C
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2SA1725
2SC4511)
10max
80min
50min
20typ
150typ
100ms
2SA1725
2SC4511
FM20
2sa1725 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB3R3M Features Item Summary 3.3 H ±20% , 4.2A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)
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LHL10TB3R3M
50min,
500pcs
96MHz
50min
46MHz
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PDF
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2SC4466
Abstract: 2SA1693
Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC4466
2SA1693)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4466
2SA1693
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PDF
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2SA1726
Abstract: 2SC4512
Text: 2SA1726 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4512 VCB=–80V –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max
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Original
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2SA1726
2SC4512)
MT-25
10max
80min
50min
20typ
150typ
2SA1726
2SC4512
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PDF
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2SC4466
Abstract: 2SA1693
Text: 2SA1693 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4466 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –1.5max V 60(Tc=25°C) W
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Original
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2SA1693
2SC4466)
MT-100
10max
80min
50min
20typ
150typ
100ms
2SC4466
2SA1693
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB222J Features Item Summary 2200 H ±5% , 0.25A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)
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Original
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LHL10TB222J
50min,
500pcs
252MHz
50min
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB102J Features Item Summary 1000 H ±5% , 0.41A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)
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Original
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LHL10TB102J
50min,
500pcs
252MHz
50min
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB272J Features Item Summary 2700 H ±5% , 0.24A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)
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Original
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LHL10TB272J
50min,
500pcs
252MHz
50min
67MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB220K Features Item Summary 22 H ±10% , 1.8A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)
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Original
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LHL08TB220K
50min,
1000pcs
52MHz
50min
11MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB470K Features Item Summary 47 H ±10% , 1.7A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)
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Original
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LHL10TB470K
50min,
500pcs
52MHz
50min
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PDF
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Untitled
Abstract: No abstract text available
Text: HVM17 Variable Capacitance Diode for FM tuner HITACHI ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.
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OCR Scan
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HVM17
ADE-208-087B
50min)
10MHz
200pF,
10OnA
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PDF
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Untitled
Abstract: No abstract text available
Text: QFP-Socket and Emulation-Adapter HHSÌ3 QFP/TQFP80 20 x 20 0.65 mm pitch IC - Dimensions Adapter PCB-Layout (View from Soldering Side) Socket PCB-Layout (Top View) 2-20. 50min .4-14. 70max .65 x 19.= ß. 6 5 * 1 9 = 1 2 . 3 5 ± 0 . 12.35 ±0. 4 - 1 3. 0 Ori I r
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OCR Scan
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QFP/TQFP80
50min
70max
IC149-080-017-S5
IC149-080-117-S5
I49-080-017-B5
IC149-080-021-S5
IC149-080-121-S5
IC149-080-021-B5
IC149-080-121-B5
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PDF
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