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    SK339 Coilcraft Inc Super Kit, 0603HC chip inductors, RoHS Visit Coilcraft Inc
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    5 K339 Price and Stock

    KEMET Corporation PHE450KK3390JR05

    Film Capacitors 400V 390pF 5% LS=7.5mm
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    Mouser Electronics PHE450KK3390JR05 2,979
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    KEMET Corporation PHE450MK3390JR05

    Film Capacitors 630V 390pF 5% LS=7.5mm
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    Mouser Electronics PHE450MK3390JR05 2,532
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    Toshiba America Electronic Components SSM3K339R,LF

    MOSFETs Small Signal MOSFET
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    Mouser Electronics SSM3K339R,LF 1,230
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    KEMET Corporation PHE450HK3390JR05

    Film Capacitors 250V 390pF 5% LS=7.5mm
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    Mouser Electronics PHE450HK3390JR05 659
    • 1 $0.63
    • 10 $0.443
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    Daniels Manufacturing Corporation (DMC) M22520/2-16

    Crimpers / Crimping Tools POSITIONER M22520/2-16
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    Mouser Electronics M22520/2-16 11
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    5 K339 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor m1104

    Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
    Text: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms


    Original     		PDF filt05 transistor m1104 transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		PDF 2SK3399

    2SK3399

    Abstract: K3399 k339
    Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) · High forward transfer admittance: |Yfs| = 5.2 S (typ) · Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		PDF 2SK3399 2SK3399 K3399 k339

    K3399

    Abstract: k339 2SK3399
    Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		PDF 2SK3399 K3399 k339 2SK3399

    k3399

    Abstract: No abstract text available
    Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		PDF 2SK3399 k3399

    K3399

    Abstract: 2SK3399
    Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)


    Original     		PDF 2SK3399 K3399 2SK3399

    K3399

    Abstract: 2SK3399
    Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 600 V)


    Original     		PDF 2SK3399 K3399 2SK3399

    Untitled

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 100are

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 2SK3398

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 2SK3398

    Untitled

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 to150

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) · High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 25transportation 2SK3398

    Untitled

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 to150

    K339

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 to150 K339

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 to150

    2SK3398

    Abstract: 75VDSS
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 2SK3398 75VDSS

    2SK3397

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 2SK3397

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 to150

    2SK3397

    Abstract: k3397
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 2SK3397 k3397

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 2SK3398

    K3399

    Abstract: 2SK3399 MJ10050
    Text: 2SK3399 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3399 ○ スイッチングレギュレータ用 • 単位: mm オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) • 順方向伝達アドミタンスが高い。: |Yfs| = 5.2 S (標準)


    Original     		PDF 2SK3399 2-10S1B K3399 2SK3399 MJ10050

    k3397

    Abstract: 2SK3397
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 k3397 2SK3397

    k2605

    Abstract: k2862 K3353 K4058 K3353-000 "frequency mixer" ku k338 K2307 K2860-000
    Text: EDüAlph GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low Noise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancement Mixers Passivated Planar Construction for Reliability Description Alpha’s series of gallium arsenide Schottky barrier


    OCR Scan     		PDF 0SflS443 k2605 k2862 K3353 K4058 K3353-000 "frequency mixer" ku k338 K2307 K2860-000