L42n
Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
Text: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:
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OCR Scan
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DD00212
HM3500,
HE12000
ECL10K/KH/100K
148-Pin
MIL-M-38510/600
MIL-STD-883C
L42n
HM3500
adb 630
L43n
"alu 4 bit"
ECL IC NAND
L44N
PT06-16-8P-S/transistor 03e
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Untitled
Abstract: No abstract text available
Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)
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OCR Scan
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HX6228
1x106
1x1014cm
1x109rad
1x101
32-Lead
1x106rad
2x105
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PDF
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HC6264
Abstract: No abstract text available
Text: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical
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OCR Scan
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HC6264
1x101
1x109
36-pin
HC6264
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)
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OCR Scan
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HX9100
1x101
1x1012rad
1x101/cm2
HX9100
4SS1A72
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PDF
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Untitled
Abstract: No abstract text available
Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible
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OCR Scan
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HM3500R,
HVM10000R
to172
148-Pin
244-Pin
M2010,
M2023
M1008,
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NSL 32 equivalent
Abstract: AVW smd AVW smd transistor
Text: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)
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OCR Scan
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36-Lead
HX6408
5x105rad
1x101
NSL 32 equivalent
AVW smd
AVW smd transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell HTMOS High Temperature Products HIGH TEMPERATURE QUAD OPERATIONAL AMPLIFIER HT1104 FEATURES APPLICATIONS • S pecified O ver -55 to +225°C , O perational to +300°C • • Single or Split Supply O peration • T urbine Engine C ontrol • C om m on-M ode Input V oltage Range
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OCR Scan
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HT1104
100pF
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