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    4N06L08

    Abstract: 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140
    Text: IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.9 mΩ ID 45 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L08 IPI45N06S4L-08 4N06L08 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140

    PG-TO252-3-11

    Abstract: IPD50N06S4L-08
    Text: IPD50N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 7.8 mΩ ID 50 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD50N06S4L-08 PG-TO252-3-11 4N06L08 PG-TO252-3-11 IPD50N06S4L-08