4lc4m16
Abstract: sdram 4 bank 4096 16 AS4LC4M16S0 4m16
Text: Advance information AS4LC8M8S0 4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words x 8 bits × 4 banks 8M×8 - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous
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AS4LC4M16S0
4Mx16
PC100/133
54-pin
AS4LC8M8S0-75TC
AS4LC8M8S0-10TC
AS4LC8M8S0-10FTC
AS4LC4M16S0-75TC
AS4LC4M16S0-8TC
4lc4m16
sdram 4 bank 4096 16
AS4LC4M16S0
4m16
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AS4LC4M16S0
Abstract: 4lc4m16 dab interleaving
Text: Advance information AS4LC8M8S0 4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words x 8 bits × 4 banks 8M×8 - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous
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Original
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PDF
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AS4LC4M16S0
4Mx16
PC100/133
54-pin
AS4LC8M8S0-75TC
AS4LC8M8S0-10TC
AS4LC8M8S0-10FTC
AS4LC4M16S0-75TC
AS4LC4M16S0-8TC
AS4LC4M16S0
4lc4m16
dab interleaving
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j13000
Abstract: dram 4mx4 DD01B J1-30004-A LM 327 CN til 702 datasheet 4lc4m4e0 4c4m4 29SF
Text: H igh P erform an ce 4M x4 CMOS DRAM « II Features • Organization: 4,194,304 words x 4 bits • High speed A S4C 4M 4E0 A 4LC4M 4E0 4M X 4 CMOS EDO DRAM Advance information JEDEC standard package - 400 mil, 24/26-pin SOJ 5V power supply 4C4M4E0 3V power supply (4LC4M4E0)
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OCR Scan
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PDF
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24/26-pin
AS4LC4M4E0-60TC
1-30004-A.
1M16E0
0004-A.
DD01b03
j13000
dram 4mx4
DD01B
J1-30004-A
LM 327 CN
til 702 datasheet
4lc4m4e0
4c4m4
29SF
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Untitled
Abstract: No abstract text available
Text: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O
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OCR Scan
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PDF
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24/26-pin
24/26-p
E0-60JC
AS4LC4M4E0-50TC
AS4LC4M4E0-60TC
U-30004-A.
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4lc4m4e0
Abstract: No abstract text available
Text: H i ” li P e r l o m i a i H r •■ \S4 4M 4H II AS4I C 4 M 4 I 0 Jl A 4M X4 CMOSDRAM t M x 4 C M O S I.IH) DRAM Advance information Features • TTL-compatible, three-state I/O • JEDEC standard package • Organization: 4,194,304 words x 4 bits • High speed
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OCR Scan
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PDF
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/30/3S
24/26-pin
24-pin
4lc4m4e0
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Untitled
Abstract: No abstract text available
Text: MICRON 4M E Gx4 . FPM DRAM DRAM 4LC4M4B1, 4LC4M4A1 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: A H i” li Pi r t o r n i a i K e 4M X4 CMOS DRAM « II AS4I C 4 M 4 S 0 4 M x 4 C M O S Synchronous DR/IM Advance information Features • • • • O rganization: 2 ,0 9 7 ,1 5 2 w ords x 4 bits x 2 banks All signals reference to positive edge o f d o c k
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OCR Scan
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PDF
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44-pin
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Untitled
Abstract: No abstract text available
Text: 4 MEG X 4 FPM DRAM MICRON I TECHNOLOGY. INC. 4LC4M4B1, MT4C4M4B1 4LC4M4A1, MT4C4M4A1 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-perform ance, low pow er CMOS silicon-gate process • Single pow er supply +3.3V +0.3V or +5V +10%
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OCR Scan
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PDF
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24/26-Pin
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2MX4
Abstract: No abstract text available
Text: H ig h p e r fo r m a n c e 4M x4 CMOS DRAM H 4LC4M 4S0 A 4 M x 4 C M O S sy n c h ro n o u s D RA M Advance inform ation Features • • • • • • • • • Burst re a d /w rite , single w rite • Can assert ran d o m colum n address in every cycle
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OCR Scan
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PDF
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44-pm
44-pin
1-30008-A.
DD01b31
2MX4
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Untitled
Abstract: No abstract text available
Text: H igh Pi'rfn rm .iiK c 4 M X-J CM O S DRAM a| \S4I 4 M 4 S 0 A 4.VIX4 CMOS Synchronous UK,AM Advance inform ation Features O rganization: 2 ,0 9 7 ,1 5 2 w ords x 4 bits x 2 banks All signals reference to positive edge o f clock Dual internal banks (controlled by BA
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: II. H igh perform ance 4M x4 CMOS DRAM •■ 4LC4M4S0 II 4 M x 4 CMOS synchronous DRAM Advance information Features • • • • • • • • • Burst re a d /w rite , single w rite • Can assert ran d o m colum n address in every cycle • LVTTL com patible I / O
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OCR Scan
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PDF
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44-pin
-30008-A.
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Untitled
Abstract: No abstract text available
Text: H ig h P e r f o r m a n c e 4M X 4 CM OS DRAM » H A S4C 4M 4E0 A S4L C 4M 4E 0 4 M X 4 CMOS EDO DRAM Advance information Features • O r g a n iz a t io n : 4 , 1 9 4 , 3 0 4 w o r d s x 4 b its JED EC s ta n d a r d p a c k a g e • H ig h s p e e d - 4 0 0 m il, 2 4 /2 6 - p i n SOJ
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OCR Scan
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PDF
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1-30004-A.
1M16E0
l-30004-A.
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MT4LC4
Abstract: No abstract text available
Text: PRELIMINARY MICRON I SEMICONDUCTOR, 4LC4M4A1/B1 S 4 MEG X 4 DRAM INC DRAM 4 MEG x 4 DRAM 3.3V FAST-PAGE-MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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PDF
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300mW
048-cycle
096-cycle
24/26-Pin
A11/NC
A0-A11
MT4LC4M4AI/81
MT4LC4
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MT4LC4M4G6
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4IW4GS 4 M EG x4 BURSTEDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V
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OCR Scan
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PDF
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048-cycle
26-Pin
000xBwhere
MT4LC4M4G6
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