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    4C6 SPECIFICATIONS Search Results

    4C6 SPECIFICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D82C284-8 Rochester Electronics LLC Processor Specific Clock Generator, 16MHz, CMOS, CDIP18, CERDIP-18 Visit Rochester Electronics LLC Buy
    D82C284-12 Rochester Electronics LLC Processor Specific Clock Generator, 25MHz, CMOS, CDIP18, CERDIP-18 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    4C6 SPECIFICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4c6 philips

    Abstract: t25 4C6 4C6 SPECIFICATIONS material 4c6 Philips 4C6 MBW006
    Text: Philips Components Material grade specification 4C6 4C6 SPECIFICATIONS SYMBOL CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 3 MHz; 0.1 mT 25 °C; 10 MHz; 0.1 mT 25 °C; 100 kHz; 1.5 to 3 mT 25 °C; 100 kHz;


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    PDF MBW006 MBW008 MBW007 100oC MBW079 4c6 philips t25 4C6 4C6 SPECIFICATIONS material 4c6 Philips 4C6 MBW006

    TH562

    Abstract: th562 c 4C6 ferrite SD1731 ferrite core transformer pin connection 4C6 SPECIFICATIONS
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION


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    PDF SD1731 TH562) TH562 SD1731 TH562 th562 c 4C6 ferrite ferrite core transformer pin connection 4C6 SPECIFICATIONS

    ferrite core transformer pin connection

    Abstract: power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731 SD1731-14 ST448
    Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .50 0 4LF L (M17 4 ) epoxy sealed O R DE R CODE


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    PDF SD1731-14 ST448) ST448 SD1731 ferrite core transformer pin connection power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731-14 ST448

    4C6 ferrite

    Abstract: ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731 SD1731-14 ssb transformer
    Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731-14


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    PDF SD1731-14 ST448) ST448 SD1731 4C6 ferrite ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731-14 ssb transformer

    TH562

    Abstract: TORIOD SD1731 th562 c ferrite core transformer pin connection IE transformer core 47UF63V
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731 BRANDING TH562 PIN CONNECTION


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    PDF SD1731 TH562) TH562 SD1731 TH562 TORIOD th562 c ferrite core transformer pin connection IE transformer core 47UF63V

    transistor k 4213

    Abstract: STMicroelectronics marking code date th562 SD1731 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet
    Text: SD1731 TH562 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 13 dB GAIN DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar


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    PDF SD1731 TH562) SD1731 transistor k 4213 STMicroelectronics marking code date th562 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet

    SD1731 datasheet

    Abstract: k 4213 transistor k 4213 SD1731 TH562 STMicroelectronics th562
    Text: SD1731 TH562 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 13 dB GAIN DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar


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    PDF SD1731 TH562) SD1731 SD1731 datasheet k 4213 transistor k 4213 TH562 STMicroelectronics th562

    5A6 smd

    Abstract: smd 5b1 9A4 smd transistor Transistor 8c4 smd 3D5 3 PIN 11d4 Teccor Electronics a6 DK101 DK2000 DS2155DK
    Text: DS2155DK/DS2156DK T1/E1/J1 Single-Chip Transceiver Design Kit Daughter Cards www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS2155/DS2156 design kits are evaluation boards for the DS2155 and DS2156. The DS2155/DS2156 design kits are intended to be used


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    PDF DS2155DK/DS2156DK DS2155/DS2156 DS2155 DS2156. DK2000 DK101 DK2000 DS2156 5A6 smd smd 5b1 9A4 smd transistor Transistor 8c4 smd 3D5 3 PIN 11d4 Teccor Electronics a6 DS2155DK

    rj48_con

    Abstract: 5B1 package SMD 11D4 pc motherboard schematics 11B7 5A6 t smd
    Text: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a


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    PDF DS21352DK DS21352 DK2000 DK101 DK101/DK2000 DS21352DK rj48_con 5B1 package SMD 11D4 pc motherboard schematics 11B7 5A6 t smd

    5A6 smd

    Abstract: 10uF 160v Transistor 8c4 6c2 diode 9A4 SMD SMD 6c6 TANTALUM SMD CAPACITOR CROSS-REFERENCES Transistor 6C5 DK101 DK2000
    Text: DS21354DK E1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21354 design kit is an easy-to-use evaluation board for the DS21354 E1 single-chip transceiver SCT . The DS21354DK is intended to be used as a


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    PDF DS21354DK DS21354 DS21354DK DK2000 DK101 DK101/DK2000 IDTQS3R861 5A6 smd 10uF 160v Transistor 8c4 6c2 diode 9A4 SMD SMD 6c6 TANTALUM SMD CAPACITOR CROSS-REFERENCES Transistor 6C5 DK101

    5A6 smd

    Abstract: 4C6 SPECIFICATIONS 11d4 Transistor 8c4 smd 8c7 5a7 02 11d5 XC95144XL-10TQ100c DK101 DS18
    Text: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a


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    PDF DS21352DK DS21352 DS21352DK DK2000 DK101 DK101/DK2000 IDTQS3R861 5A6 smd 4C6 SPECIFICATIONS 11d4 Transistor 8c4 smd 8c7 5a7 02 11d5 XC95144XL-10TQ100c DK101 DS18

    4c6 philips

    Abstract: philips 3h1 RM6R-3H1 coil 3h1 a250 RM6R-3D3-E63 philips 3h1 A400 Philips 4C6 4C6 SPECIFICATIONS material 3h1 CBW128
    Text: MAGNETIC PRODUCTS DATA SHEET RM6R RM cores and accessories Product specification Supersedes data of 1997 Nov 21 File under Magnetic Products, MA01 1999 Jan 18 Philips Components Product specification RM cores and accessories RM6R CORE SETS Effective core parameters


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    PDF COD21 4c6 philips philips 3h1 RM6R-3H1 coil 3h1 a250 RM6R-3D3-E63 philips 3h1 A400 Philips 4C6 4C6 SPECIFICATIONS material 3h1 CBW128

    Untitled

    Abstract: No abstract text available
    Text: SKiM 400GD126DM Absolute Maximum Ratings Symbol Conditions IGBT M>NG -> ->TU M.NG $X C$5,*D $ 67 $5 H IJ CRPD K> ,7 H O E5 E+][ (+5& 67&%+,1'* ,&E7&%+,:%& M1563 SKiM 4 $( H IJ K>L :'3&55 6, &%015& 57&(121&4 -; -;TU $5 H IJ CRPD K> ,7 H O E5 -;GU ,7 H OP E5^ 51'[^ $X H OJP K>


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    PDF 400GD126DM M1563

    Untitled

    Abstract: No abstract text available
    Text: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT M>NG -> ->VW M.NG $Z C$5,*D $ 67 SKiM 5 SKiM 601GD126DM Preliminary Data Features # $%&'( *+,& -./$ 01,) 21&34 5,67 # # E+^¥ (+5& 67&%+,1'* ,&E7&%+,:%& Values Units OIPP STP CURPD XPP Y IP [ SP ¥¥¥ ] OJP COIJD


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    PDF 601GD126DM M1563

    DIODE aaz

    Abstract: No abstract text available
    Text: SKiM 600GD126DLM . $ I JK L>M :'3&55 6, &%015& 57&(121&4 Absolute Maximum Ratings Symbol Conditions IGBT N>OG $P I L> -> $P I RKS L> ->YZ RJSS N KJU ? $)&+,51'T I VS L> WXR ? _SS ? ` JS N RS c5 $)&+,51'T I JK L> W^^ ? $)&+,51'T I VS L> J^_ ? XSS ? WWSS


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    PDF 600GD126DLM DIODE aaz

    MLX16

    Abstract: No abstract text available
    Text: MLX91801 Tire Pressure Monitoring SiP Features and Benefits Application Examples 1 Low-Power Microcontroller-based PressureTemperature-Battery monitor, ideally suited for TPMS 1 Different available pressure ranges up to 1400 kPa 1 Measurement of car and truck tire pressure


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    PDF MLX91801 125KHz ISO14001 MLX16

    philips ferroxcube 4c6

    Abstract: mgp063 BLF175 PHILIPS HF CHOKE type 4330 hf amplifier for transformer D1 Marking SOT123 PHILIPS toroidal core MGP080 ferroxcube 4C6 ferroxcube 4322 020 97171
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain • Low intermodulation distortion


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    PDF BLF175 MBB072 MSB057 OT123 philips ferroxcube 4c6 mgp063 BLF175 PHILIPS HF CHOKE type 4330 hf amplifier for transformer D1 Marking SOT123 PHILIPS toroidal core MGP080 ferroxcube 4C6 ferroxcube 4322 020 97171

    Untitled

    Abstract: No abstract text available
    Text: Rev: 102108 DS33M33 Demo Kit General Description The DS33M33 demo kit DK is an easy-to-use evaluation board for the DS33M33 and the DS33M33 Ethernet-over-SONET/SDH devices. The demo kit contains an option for either T3 or E3. The T3E3 links are complete with line interface, transformers, and


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    PDF DS33M33 DS33M33 CB168 CB107 CB165 CB100 dp83865bvh

    do214

    Abstract: T1 6C6 smd A12 5PIN smd z17 smd A13 5pin XC2S50 driver CON12P F1333 Transistor 5C5 Transistor 8c4
    Text: DS21Q55DK Quad T1/E1/J1 Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21Q55DK is an easy-to-use evaluation board for the DS21Q55 quad T1/E1/J1 transceiver. The DS21Q55DK is intended to be used as a daughter card with the DK101 motherboard or the DK2000


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    PDF DS21Q55DK DS21Q55DK DS21Q55 DK101 DK2000 DK101/DK2000 do214 T1 6C6 smd A12 5PIN smd z17 smd A13 5pin XC2S50 driver CON12P F1333 Transistor 5C5 Transistor 8c4

    BJBS

    Abstract: 4C6 ferrite TH562
    Text: . 5 7 SGS-THOMSON SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION Pout — 220 W PEP WITH 13 dB GAIN PIN CONNECTION 1 4X \ (o f jO ) \y DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar


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    PDF SD1731 TH562) SD1731 BJBS 4C6 ferrite TH562

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 i. SD1731-14 ST448 •ILO RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P o u t = 250 W PEP WITH 12 dB GAIN .500 4LFL (M 174) epoxy sealed


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    PDF SD1731-14 ST448) SD1731 ST448 0D77b3b

    Untitled

    Abstract: No abstract text available
    Text: Œ fï . SG S-IHO M SON l[Li ïï[ÊMO©S SD1731 TH562 RF & M ICRO W AVE TR AN SISTO R S HF SSB APPLIC ATIO N S . OPTIMIZED FOR SSB • 30 MHz ■ 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER ■ GOLD METALLIZATION > P o u t = 220 W PEP WITH 13 dB GAIN PIN CONNECTION


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    PDF SD1731 TH562) SD1731

    4C6 ferrite

    Abstract: No abstract text available
    Text: SGS-THOMSON m SD1731-14 ST448 RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION Pout = 250 W PEP WITH 12 dB GAIN .50 0 4 L F L ( M 1 7 4 ) epoxy sealed O R D ER CODE


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    PDF SD1731-14 ST448) ST448 SD1731 4C6 ferrite

    bz 148 diode

    Abstract: 74VHC245 74VHC245M 74VHC245MTC 74VHC245SJ 74VHCT245 M20D MTC20 VHC245
    Text: EM ICDNDUCTOR t 74VHC245 74VHCT245 Octal Bidirectional Transceiver with 3-STATE Outputs General Description Features The VH C/VH C T245 is an advanced high speed C M O S octal bus tran sce ive r fabricated w ith silicon gate C M O S technol­ ogy. It achieves high speed operation sim ilar to equivalent


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    PDF 74VHC245 74VHCT245 VHC/VHCT245 VHC245 bz 148 diode 74VHC245 74VHC245M 74VHC245MTC 74VHC245SJ 74VHCT245 M20D MTC20