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Catalog Datasheet	MFG & Type	PDF	Document Tags
KYS 30 40 diode Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100 Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching	OCR Scan	PDF	30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
f g megamos Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested	OCR Scan	PDF	ofMIL-S-19500 MIL-M-38510. f g megamos megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
f g megamos Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested	OCR Scan	PDF	fit55t Q000563 f g megamos megamos 13 megamos IXGE75N100Z ID 48 Megamos
GEM X 365 Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd Text: Prelim inary data HiPerFAST IGBT IXGH24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	PDF	IXGH24N50B IXGH24N60B O-247 24N50 24N60 GEM X 365 24N60 zr smd
Untitled Abstract: No abstract text available Text: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms FAV* 1 Ifmi	OCR Scan	PDF	OT-227 2x61-06B 2x61-08B 2x61-10B D-68619
E72873 Abstract: MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1 MDD56-16N1 Text: 4bE » • MbfibSSb 0 0 0 1 2 2 2 T « I X Y I X Y S CORP n i x Y S MDD56 Diode Modules iTAV= 2 x 71 A VRRM= 400-1600 V Vrsm V„rm Type V V Version 1 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1	OCR Scan	PDF	GGQ122S MDD56 MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1 MDD56-16N1 E72873 MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1 MDD56-16N1
j45ac Abstract: No abstract text available Text: □IXYS Power MOSFET Stage for Boost Converters VUM 24-05 VDSS D25 R DS on Module for Power Factor Correction 1 3 Symbol 2 7 8 = 500 V = 35 A = 0 .1 2 Q 4 6 Maximum Ratings Test Conditions 500 500 ±20 V V V Ts = 85°C Ts = 25°C : 25°C, t = <D 24 35 95	OCR Scan	PDF	4bflb25b OG31bD j45ac
bt 2025 Abstract: VM7512 Text: □IXYS IGBT Modules Half-Bridge and Chopper Configurations High Short Circuit SOA Capability VII VII 75-12S3 VID75-12S3 VDI75-12S3 VID IC DC = 75 A VCES = 1200 V VCE(sat) = 3.4 V VDI r -•’ 3 I * -o I 8 o— M 90 Symbol Test Conditions I I O	OCR Scan	PDF	75-12S3 VID75-12S3 VDI75-12S3 VID75 VDI75 fib22b VII75-12S3 bt 2025 VM7512
Diode LT 023 Abstract: No abstract text available Text: Thyristor Modules Thyristor/Diode Modules MCC 95 iTRMS = 2 x 180 A MCD 95 iTAVM =2x116A V = 800-1800 V RRM T 0 -2 4 0 AA v RSM V V DSM V DRM V V Version 1 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC T y P e rrm 95-08io1 95-12io1 95-14io1	OCR Scan	PDF	2x116A 95-08io1 95-12io1 95-14io1 95-16io1 95-18io1 95-08io8 95-12io8 95-16io8 95-18io8 Diode LT 023
Untitled Abstract: No abstract text available Text: n ixY S Fast Recovery Epitaxial Diode FRED v RSM V* RRM V DSEI12 IFAVM f\ A Type V RRM 12 A 1000 V t 50 ns TO-220 AC 1 \ C V DSEi 12-10 A 1000 1 0 00 Symbol Test Conditions Maximum Ratings ^FRM T1 VJ = T1 VJM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited by TVJM	OCR Scan	PDF	DSEI12 O-220 4bflb25b
tt 2146 m Abstract: tt 2146 IXGH9090 Text: EilXYS IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lfi 48 A 600 V 2.7 V 400 ns T O -2 4 7 A D M a x im u m R a tin g s S ym bol T e s t C o n d itio n s VcHS T j = 2 5 'C to 1 5 0 X 600 V ^C G R T ,J = 2 5 'C to 1 5 0 X ; R b t = 1 M a 600	OCR Scan	PDF	IXGH9090 4bflb25b tt 2146 m tt 2146