15N60
Abstract: IXTM15N60
Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r
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4bflb22b
D00034Ö
IXTH15N60,
IXTM15N60,
IXTH15N55
IXTM15N55
IXTH15N60
IXTM15N60
50-600V,
O-247
15N60
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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ixys dsei 2x30-05c
Abstract: ixys dsei 2x30-04c ixys dsei
Text: 4bflb22b O G O ia n D Y I X E H B IIX Y S DSEI 2x30 IFAV DSEI 2x31 VRRM Fast Recovery Epitaxial Diodes 2x30 A 400-600 V < 35 ns miniBLOC, SOT-227 B v RSM V T yp e Typ e V V 440 540 640 400 500 600 Symbol Test Conditions •cavi . TVJ = Tvjm Tc = 85°CT rectangular, 6= 0.5
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4bflb22b
OT-227
2X30-04C
2x31-040
2x30-05C
2x31-050
2x30-060
2x31-060
D-68619
ixys dsei 2x30-05c
ixys dsei 2x30-04c
ixys dsei
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E2512
Abstract: vgb 0503 VGB0504MY7 VBO 24 VGB0492MY7 80380 b1912 E2506 vgb 0491 VGB0493MY7
Text: I X Y S CORP If lE D • 4bflb22b 0QQ07bñ Rectifier Bridges, 1~ i 5 ■ 'T - r s - o c i Typical applications - DC-Power supplies - DC-Supply for electronics and power control systems - Avalanche Types: magnet valves, magnet brakes B 1906 LF B 1912 LF LF
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4bflb22b
0QQ07bñ
E2512
VB010
vgb 0503
VGB0504MY7
VBO 24
VGB0492MY7
80380
b1912
E2506
vgb 0491
VGB0493MY7
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cs 16-12
Abstract: TP 220 bjt CS 8-10 io2 cs 23-12 142-06 CS 8-10 cs 3504 T0208AA CS 8-02 CS 8-12
Text: 4bflb22b O D D i a b S bb4 • IXY Phase Control Thyristors lTAV= 16-330 A V *TAV RRM *TRMS V DRM Tc= 85°C Type V A A 25 CS 8-12 io2 1200 16 • CS 5-12 io2 • CS 8-10 ¡02 • CS 5-10 io2 i 200 1000 1000 11.5 16 11.5 CS 8-08 102 800 16 • • • • •
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4bflb22b
cs 16-12
TP 220 bjt
CS 8-10 io2
cs 23-12
142-06
CS 8-10
cs 3504
T0208AA
CS 8-02
CS 8-12
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VB020-12N02
Abstract: VB020-06N02 VB020 VB020-16N02 VB020-08N02 VB020-16A02 06N02 VB020-14A02 VB020-04N02
Text: 4bE D • 4bflb22b I X Y S □IXYS D0D1271 1 « I X Y CORP November 1991 Data Sheet No. 911012A Single-Phase Diode Rectifier Bridge VB020 FEATURES:_ • • • Avalanche Rated Parts Available Isolated Direct Copper Bond Base Plate
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4bflb22b
D0D1271
11012A
VB020
VB020-04N02
VB020-06N02
VB020-08N02
VB020-10N02
VB020-12N02
VB020-14N02
VB020
VB020-16N02
VB020-16A02
06N02
VB020-14A02
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Untitled
Abstract: No abstract text available
Text: I X Y S CORP IflE D 4bflb22b GOOOfc.34 b PIXYS I X T E 14 N 40 X 4 MAXIMUM RATINGS PER DEVICE IXTE14N40X4 Sym. Drain-Gate Voltage (Rqs = I.OMO)(1) Voss Vdc Vd g r 400 Vdc Vgs Vdc Vgsm ±3 0 V Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25,C)
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4bflb22b
IXTE14N40X4
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20-16A02
Abstract: 20-16N02 VBO 20-16N02
Text: 4bflb22b Ü D D I M D ? T43 « I X Y □IXYS VBO 20 IdAV = 31 A VRRM = 8 0 0 -1 6 0 0 V Single Phase Rectifier Bridges Standard and Avalanche Types v RSM V BRmln V V 900 1300 1700 v*HRH Standard Avalanche V Types Types VBO 20-08N02 VBO 20-12N02 VBO 20-16N02
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4bflb22b
20-08N02
20-12N02
20-16N02
0-12A
20-16A02
VBO20
20-16A02
20-16N02
VBO 20-16N02
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abb ys thyristor
Abstract: Thyristor ABB ys 150 ABB thyristor ys
Text: 4bE D • 4bflb22b OOGlEM'i û « I X Y I X Y S CORP □IXYS *T Data Sheet No.911001A November 1991 Three-Phase Diode Rectifier Bridge with Thyristor VUC25 FEATURES: • Fast Recovery Diodes to Reduce EMI • Separate Thyristor for "Soft Start" • Isolated Direct Copper Bond Base Plate
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4bflb22b
11001A
E72873M)
VUC25
abb ys thyristor
Thyristor ABB ys 150
ABB thyristor ys
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LCMV
Abstract: No abstract text available
Text: 4bflb22b □ □ □ 1 5 3 1 043 M I X Y nixYS # IGBT with Diode IXSN55N120U1 IC25 VCES High Short Circuit SO A Capability CE sat = 83 A = 1200 V = 3.5 V Preliminary data (09/93) Maximum Ratings Symbol Test Conditions vCES v«„ T.J = 25‘ C to 150'C Tj = 25'C to 150'C; RGE= 1 M iî
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4bflb22b
IXSN55N120U1
OT-227
40acteristic
LCMV
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6n60a
Abstract: 6N60 3N90 IXTM6N60 IXTP6N60
Text: I X Y S CORP IflE D • 4bflb22b O O O O b l O □IX YS IX T P 6 N 6 0 , 3 IX T M 6 N 6 0 6 A M P S , 6 0 0 V , 1 .2 S / 1 .5 Q M A X IM U M R A T IN G S " T - '^ 0 1 - 1 - 7 P aram eter IX T P 6N 60 IX T M 6 N 6 0 S ym . Drain-Source Voltage 1 U nit D rain-G ale Voltage (R GS =1.0 M Q ) (1)
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IXTP6N60,
IXTM6N60
IXTP6N60
O-220
6n60a
6N60
3N90
IXTP6N60
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60-05A
Abstract: 60-06A DSEI60 JJS1200 p-to 247 c107w PS1000
Text: 4bflb22b DOGlbBb 50b * I X Y nixYS DSEI 60 U Fast Recovery Epitaxial Diode v v HR* V V 440 540 640 400 500 600 Type DSEI 60-04A DSEI 60-05A DSEI 60-06A * Maximum ratings Symbol Test conditions imun 1«« 1 Tw = T VJU Tc = 70°C; rectangular, 6 = 0.5 < 1 0 us; rep. rating, pulse width limited by TVJU
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4bflb22fc.
DSEI60
0-04A
0-05A
0-06A
O-247
/JJS1200
60-05A
60-06A
JJS1200
p-to 247
c107w
PS1000
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CS 8-10 io2
Abstract: CS 8-12 cs 23-12 T0208 cs 16-12 142-12io8 CS 8-02
Text: 4bflb22b 00D13bS bm • IXV Phase Control Thyristors lTAV= 1 6 - 3 3 0 A Type V RRM V DRM Tc= 85°C V *TRMS ' tsm A A 45°C 10 ms A 25 *TAV CS 8-12 io2 • CS 5-12 io2 • CS 8-10 ¡02 • CS 5-10 io2 CS 8-08 102 • CS 5-08 io2 • CS 8-06 go2 • CS 5-06 go2
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4bflb22b
00D13bS
CS 8-10 io2
CS 8-12
cs 23-12
T0208
cs 16-12
142-12io8
CS 8-02
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Untitled
Abstract: No abstract text available
Text: 4bflb22b □OQlbb'l TS2 H I X Y DIXYS < < < ! I Thyristor Modules Thyristor/Diode Modules V mm Vo», V 500 700 900 1300 1500 1700 1900 400 600 000 1200 1400 1600 1600* MCC72 MCD72 iTAV= 2 x 85 A VRRM= 400-1800 v Type Version 1 B MCC72-064O1 MCC72-08ÌO1 MCC72-12Ì01
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4bflb22b
MCC72
MCD72
MCC72-064O1
MCC72-08Ã
MCC72-12Ã
MCC72-14Ã
MCC72-16Ã
MCC72-18io1
MCC72Â
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Untitled
Abstract: No abstract text available
Text: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500
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IXTH/IXTM21N50
IXTH/IXTM24N50
O-247
21N50
24N50
4bflb22b
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Untitled
Abstract: No abstract text available
Text: DIXYS High Power Diode Modules MDD220 IFRMS 2 x 450 A FAVM 2 x 270 A V RRM VRSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 Type MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol Test Conditions ^FRMS TVJ = T' VJM Tc = 100°C; 180° sine ^FAVM
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MDD220
220-08N1
220-12N1
220-14N1
220-16N1
4bflb22b
DDD35bM
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30n60
Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2
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IXGH30
N60U1
N60AU1
30N60U1
30N60AU1
30n60
IXGH30N60U1
IXC 844
30N60U1
n60u
30N60A
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1xys
Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500
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IXTN36N45
IXTN36N50
IXTN36N45
Cto150Â
IXTN36N
D-68619;
1xys
IXTN36N50
36N50
E72873
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Untitled
Abstract: No abstract text available
Text: ISOSMART IGBT Module VIE200-12S4 lc = 200 A VCES = 1200 V Intelligent Power Module IPM with integrated galvanic isolation interface High Sh ort Circuit S O A C ap ab ility 4 Driver 5 Jt Protection e 9 10 Preliminary data Isolatori Symbol Test Conditions
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VIE200-12S4
4bflb22b
Mbflb22b
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Untitled
Abstract: No abstract text available
Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2
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N100U1
N100AU1
O-247
10N100U1
10N100AU1
4bflb22b
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Untitled
Abstract: No abstract text available
Text: H b û b 2 2 b 0 0 0 1 Ö 0 3 ^21 I IX Y ID IXYS IG B T w ith D io d e ÌX S N 3 0 N 10 0 A U 1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 é * 'T i Symbol Test Conditions V«s Tj = 25°C to 150°C 1000 V v«* Tj = 25°C to 150°C; RGE= 1 M£2
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D-68619;
4bflb22b
D-68619
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IXSN35N120
Abstract: No abstract text available
Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings
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35N120AU1
OT-227
IXSN35N120AU1
4bflb22b
IXSN35N120
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Untitled
Abstract: No abstract text available
Text: Id IXYS • Fast Recovery Epitaxial Diode FRED DSEI60 lFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD c A Sym bol T e st C o n d itio n s ^FRMS "*vj = "*"vjM T c = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T VJM 98 69 800
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DSEI60
O-247
4bflb22b
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ixys dsei 2x61-06C
Abstract: No abstract text available
Text: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4
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OT-227
2x61-04C
2x61-05C
2x61-06C
D-68619
ixys dsei 2x61-06C
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