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    488AA Search Results

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    488AA Price and Stock

    Analog Devices Inc DC1488A-A

    EVAL BOARD FOR LTC2634-12
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    DigiKey DC1488A-A Box 1 1
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    Mouser Electronics DC1488A-A 5
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    Analog Devices Inc DC1488A-A 42
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    Richardson RFPD DC1488A-A 1
    • 1 $84.74
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    Renesas Electronics Corporation 8T49N488AASGI

    8T49N488AASGI
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    Renesas Electronics Corporation 8T49N488AASGI8

    8T49N488AASGI8
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    onsemi ADT7488AARMZ-RL

    IC TEMP/VOLT DGTL W/SST 10MSOP
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    DigiKey ADT7488AARMZ-RL Reel 3,000
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    Rochester Electronics ADT7488AARMZ-RL 10,983 1
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    Rochester Electronics LLC ADT7488AARMZ-RL

    TEMP. SENSOR WITH SST INTERFACE
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    DigiKey ADT7488AARMZ-RL Bulk 134
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    ADT7488AARMZ-RL Bulk 134
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    Find more 488AA price and stock on Findchips.com

    488AA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    488AA

    Abstract: MO-240A SO8FL 488AA-01
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P SO−8FL CASE 488AA−01 ISSUE E 1 SCALE 2:1 DATE 17 AUG 2010 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE


    Original     		PDF 488AA-01 488AA 488AA MO-240A SO8FL 488AA-01

    4934N

    Abstract: NTMFS4934N 362 N MOSFET NTMFS4934NT1G
    Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4934N NTMFS4934N/D 4934N 362 N MOSFET NTMFS4934NT1G

    4841NH

    Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH mosfet 4841NH 4841N 090nh NTMFS4841NHT1G

    4939n

    Abstract: 15AID 488A
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4939N NTMFS4939N/D 4939n 15AID 488A

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package http://onsemi.com Features • Thermally and Electrically Enhanced Packaging Compatible with • • • • Standard SO−8 Package Footprint New Package Provides Capability of Inspection and Probe After


    Original     		PDF NTMFS4108N NTMFS4108N/D

    Untitled

    Abstract: No abstract text available
    Text: NTS8100MFS, NRVTS8100MFS Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability


    Original     		PDF NTS8100MFS, NRVTS8100MFS NTS8100MFS/D

    5832NL

    Abstract: DFN5 1.6 PACKAGE DIMENSIONS NTMFS5832NLT1G
    Text: NTMFS5832NL Power MOSFET 40 V, 111 A, 4.2 mW Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS5832NL NTMFS5832NL/D 5832NL DFN5 1.6 PACKAGE DIMENSIONS NTMFS5832NLT1G

    NTMFS4833N

    Abstract: NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet
    Text: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*


    Original     		PDF NTMFS4833N NTMFS4833N/D NTMFS4833N NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet

    mosfet 4941n

    Abstract: NTMFS4941NT1G 4941n NTMFS4941
    Text: NTMFS4941N Power MOSFET 30 V, 47 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4941N NTMFS4941N/D mosfet 4941n NTMFS4941NT1G 4941n NTMFS4941

    mosfet 4925n

    Abstract: 4925N BFR 965 NTMFS4925NT1G
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4925N NTMFS4925N/D mosfet 4925n 4925N BFR 965 NTMFS4925NT1G

    NTMFS4121N

    Abstract: NTMFS4121NT1G NTMFS4121NT3G
    Text: NTMFS4121N Power MOSFET 30 V, 29 A, Single N−Channel, SO−8 Flat Lead Features • • • • Low RDS on Optimized Gate Charge Low Inductance SO−8 Package These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • Notebooks, Graphics Cards


    Original     		PDF NTMFS4121N NTMFS4121N/D NTMFS4121N NTMFS4121NT1G NTMFS4121NT3G

    NTMFS4747NT3G

    Abstract: NTMFS4747N NTMFS4747NT1G 44A17
    Text: NTMFS4747N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4747N NTMFS4747N/D NTMFS4747NT3G NTMFS4747N NTMFS4747NT1G 44A17

    V5834L

    Abstract: No abstract text available
    Text: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTMFS5834NL, NVMFS5834NL NVMFS5834NLWF NTMFS5834NL/D V5834L

    Untitled

    Abstract: No abstract text available
    Text: NTS1545EMFS, NRVTS1545EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Leakage Fast Switching with Exceptional Temperature Stability


    Original     		PDF NTS1545EMFS, NRVTS1545EMFS NTS1545EMFS/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 226 A, Single N−Channel Features • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTMFS5C612NL NTMFS5C612NL/D

    Untitled

    Abstract: No abstract text available
    Text: NTS12100MFS Very Low Forward Voltage Trench-based Schottky Rectifier Features http://onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability


    Original     		PDF NTS12100MFS NTS12100MFS/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		PDF NTMFS4H02N NTMFS4H02N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS5C410NL Power MOSFET 40 V, 0.9 mW, 302 A, Single N−Channel Features • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTMFS5C410NL NTMFS5C410NL/D

    Untitled

    Abstract: No abstract text available
    Text: NVMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF − Wettable Flank Option for Enhanced Optical


    Original     		PDF NVMFS5C604NL NVMFS5C604NLWF NVMFS5C604NL/D

    4C03N

    Abstract: NVMFS4C03NT3G
    Text: NVMFS4C03N, NVMFS4C03NWF Power MOSFET 30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL http://onsemi.com Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses


    Original     		PDF NVMFS4C03N, NVMFS4C03NWF NVMFS4C03N/D 4C03N NVMFS4C03NT3G

    Untitled

    Abstract: No abstract text available
    Text: NTS1545MFS, NRVTS1545MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability


    Original     		PDF NTS1545MFS, NRVTS1545MFS NTS1545MFS/D

    Untitled

    Abstract: No abstract text available
    Text: NTS12100EMFS, NRVTS12100EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability


    Original     		PDF NTS12100EMFS, NRVTS12100EMFS NTS12100EMFS/D

    NVMFS5C404NLT1G

    Abstract: No abstract text available
    Text: NVMFS5C404NL, NVMFS5C404NLWF Power MOSFET 40 V, 0.75 mW, 352 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF − Wettable Flank Option for Enhanced Optical


    Original     		PDF NVMFS5C404NL, NVMFS5C404NLWF NVMFS5C404NL/D NVMFS5C404NLT1G

    Untitled

    Abstract: No abstract text available
    Text: NTS10120EMFS, NRVTS10120EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability


    Original     		PDF NTS10120EMFS, NRVTS10120EMFS NTS10120EMFS/D