NTTFS4800N
Abstract: NTTFS4800NTAG NTTFS4800NTWG
Text: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
|
Original
|
PDF
|
NTTFS4800N
NTTFS4800N/D
NTTFS4800N
NTTFS4800NTAG
NTTFS4800NTWG
|
Untitled
Abstract: No abstract text available
Text: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
|
Original
|
PDF
|
NTTFS4800N
NTTFS4800N/D
|
NTTFS4800N
Abstract: NTTFS4800NTAG NTTFS4800NTWG
Text: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
|
Original
|
PDF
|
NTTFS4800N
NTTFS4800N/D
NTTFS4800N
NTTFS4800NTAG
NTTFS4800NTWG
|
Untitled
Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI
|
Original
|
PDF
|
IRF6641TRPbF
|
SJ 76 A DIODE EMI
Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI
|
Original
|
PDF
|
IRF6643TRPbF
SJ 76 A DIODE EMI
|
Untitled
Abstract: No abstract text available
Text: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S G S N - CHANNEL ENHANCEMENT MODE 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
|
Original
|
PDF
|
ARF1500
40MHz
ARF1500
|
Untitled
Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low RDS on for improved efficiency Low Qg for better THD and improved efficiency
|
Original
|
PDF
|
IRF6641TRPbF
|
AMPLIFIER 1500w
Abstract: No abstract text available
Text: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
|
Original
|
PDF
|
ARF1500
40MHz
ARF1500
AMPLIFIER 1500w
|
840S2
Abstract: P-DSO-20-12
Text: Preliminary Data PROFET BTS 840S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ
|
Original
|
PDF
|
840S2
P-DSO-20-12
840S2
P-DSO-20-12
|
CMOS Process Family
Abstract: 0.6 um cmos process
Text: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage
|
Original
|
PDF
|
|
P-MOSFET
Abstract: mosfet 4800 micron resistor 0.6 um cmos process 3-Micron-CMOS-Process 4800 mosfet MOSFET dynamic parameters 1.2 Micron CMOS Process Family
Text: 3 Micron CMOS Process Family June 1995 Process Parameters Features • Double Poly / Double Metal • 6 µm Poly Pitch; 7 µm Metal Pitch • 7 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 10 Volts High Voltage Option • Low TCR Resistor Module
|
Original
|
PDF
|
|
siemens functional description profet
Abstract: P-DSO-20-12
Text: PROFET BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ 12A 24A 5.0.34V
|
Original
|
PDF
|
P-DSO-20-12
systems23)
1999-Nov-18
siemens functional description profet
P-DSO-20-12
|
0.6 um cmos process
Abstract: CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family
Text: 3 Micron CMOS Process Family February 1996 Features • • • • • • Process Parameters LOVMOS Process 2.7~3.6 Volts Low Voltage Option Double Poly / Double Metal 6 µm Poly Pitch; 7 µm Metal Pitch 7 Volts Maximum Operating Voltage 10 Volts High Voltage Option
|
Original
|
PDF
|
fam10-04
0.6 um cmos process
CMOS Process Family
micron resistor TCR
1.2 Micron CMOS Process Family
|
4800 BB
Abstract: P-DSO-20-12 BTS840S2 Q67060S701 hl24l
Text: PROFET BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ 12A 24A 5.0.34V
|
Original
|
PDF
|
P-DSO-20-12
2003-Oct-01
4800 BB
P-DSO-20-12
BTS840S2
Q67060S701
hl24l
|
|
|
BTS 740 s2
Abstract: BTS 740 S5 BTS 740 profet Q67060-S7012 Q67060-S7012-A2
Text: PROFET BTS 740 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Package Operating Voltage one 30mΩ 5.5A 24A 5.0.34V
|
Original
|
PDF
|
P-DSO-20-9
2003-Oct-01
BTS 740 s2
BTS 740 S5
BTS 740
profet
Q67060-S7012
Q67060-S7012-A2
|
740S2
Abstract: BTS 740 L2
Text: PROFET BTS 740S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Package Operating Voltage one 30mΩ 5.5A 24A 5.0.34V
|
Original
|
PDF
|
740S2
P-DSO-20-9
740S2
BTS 740 L2
|
IRF7665S2
Abstract: IRF7665S2TR1PBF AN1035 IRF7665S2TR
Text: DIGITAL AUDIO MOSFET PD - 96239 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI
|
Original
|
PDF
|
IRF7665S2TRPbF
IRF7665S2TR1PbF
AN1035
IRF7665S2
IRF7665S2TR1PBF
IRF7665S2TR
|
Untitled
Abstract: No abstract text available
Text: PD - 96239 DIGITAL AUDIO MOSFET IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI
|
Original
|
PDF
|
IRF7665S2TRPbF
IRF7665S2TR1PbF
AN1035
|
ARF1500
Abstract: AMPLIFIER 1500w MAX3920 "27 mhz" amp 700B
Text: S D S S D S ARF1500 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
|
Original
|
PDF
|
ARF1500
1525-xx
40MHz
ARF1500
50-450pF
AMPLIFIER 1500w
MAX3920
"27 mhz" amp
700B
|
Untitled
Abstract: No abstract text available
Text: MOSFET MODULE SF150AA50 UL;E76102 M SF1 5 0 A A 5 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 1 5 0 A A 5 0 enable you to control high power with compact p a c k a g e .^ ^ 150A, VDSS= 500V Compact Package
|
OCR Scan
|
PDF
|
SF150AA50
E76102
112M3
Q00B24B
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data PROFET BTS 840S2 Smart High-Side Power Switch Two Channels: 2 x 3 0 mo Current Sense Product Summary Operating Voltage Package Vbb on Active channels: one On-state Resistance Ron Load Current (ISO) Current Limitation 5.0. ,34V two parallel
|
OCR Scan
|
PDF
|
840S2
30mi2
15mi2
|
Untitled
Abstract: No abstract text available
Text: PROFET BTS 740S2 Smart High-Side Power Switch Two Channels: 2 x 30mo Current Sense Product Summary Operating Voltage Vbb on Active channels one 30mi2 On-state Resistance R on 5.5A Nominal load current Il(NOM) Current limitation 24A IL(SCr) Package 5.0. ,34V
|
OCR Scan
|
PDF
|
740S2
30mi2
15mi2
70jim,
|
2sj403
Abstract: 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430
Text: Large-signal Power M0SFETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
|
OCR Scan
|
PDF
|
chan12/0
2SK2010
2SK2011
2SK2012
2SK2108
2SK2058
2SK2058
O-220
T0-220ML
H707b
2sj403
2sk2532
2SJ406
2SJ28
mosfet 4800
2sk2680
2SK2161
2SK1427
2SK1428
2SK1430
|
2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
|
OCR Scan
|
PDF
|
2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
|
