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    Untitled

    Abstract: No abstract text available
    Text: I Ordering number :E N 4 7 6 8 _ 2SC4922 N PN E p itax ial P la n a r Silicon T ran sisto r M uting Circuit, Driver Applications F e a tu re s • H igh DC c u rre n t gain. •On-chip bias resistance R1 = 47kfl,R 2 = 47ki2 • Very sm all-sized package p erm ittin g 2SC4922-applied sets to be m ade sm aller and slim m er.


    OCR Scan     		PDF 2SC4922 47kfl 47ki2) 2SC4922-applied 53094TH AX-8876

    2SA1420

    Abstract: SC36 small signal transistor
    Text: Ordering number: EN 1682A 2SA1420/2SC3653 PNP/ NPN Epitaxial P lanar Silicon Transistors SAßtYO i Switching Applications _ with Bias Resistor Use .Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=47kfl ,R2=47kO ).


    OCR Scan     		PDF l682A 2SA1420/2SC3653 2SA1420 2034/2034A SC-43 7tlt17D7b SC36 small signal transistor

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR FC107 CORP E2E D 7 cn 7 D 7 b Q0G7372 1 T-Sl-ll # P N P Epitaxial Planar S ilicon C o m p o site Transistor 2066 Switching Applications 3075 with Bias Resistances R1=47ki2, R2=47kO Features • On-chip bias resistors (Ri = 47kfl,R2= 47k£2)


    OCR Scan     		PDF FC107 Q0G7372 47ki2, 47kfl FC107 2SA1341, 4139MO QD07373

    KSR1212

    Abstract: KSR2212
    Text: {SAMSUNG SEM ICONDUCTOR INC KSR1212 IME D | 7^4145 0007034 1 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R=47Kfl) • Complement to KSR2212


    OCR Scan     		PDF KSR1212 47Ktl) KSR2212 O-92S KSR2212

    marking M42

    Abstract: KSR1113 KSR2113
    Text: SAMSUNG SEMICONDUCTOR INC KSR2113 14E O I 7*11.4142 G 007133 T PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T- Bias Resistor Built In • Switching circuit, Inverter, interface circuit Driver circuit • Built in bias Reslstor(R,=2.2Kf), R,=47Kfl)


    OCR Scan     		PDF KSR2113 KSR1113 OT-23 -100jjA, marking M42 KSR1113 KSR2113

    KSR1206

    Abstract: KSR2206
    Text: SAMSUNG SEMICONDUCTOR INC 7 - 3 5 - ) 1 4 E D | ? cl b 4 l 4 a G007Q73 7 | KSR1206 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In) • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10KI), R,=47Kfl)


    OCR Scan     		PDF 7clb4142 KSR1206 KSR2206 10fiA, 0007C17M KSR2206

    transistor 1207

    Abstract: R1207
    Text: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R esistor (Ri<*22kQ, R2=47kfl) • Com plem ent to KS R 1207 ABSOLUTE MAXIMUM RATINGS (TA=25t)


    OCR Scan     		PDF KSR2207 47kfl) Collect00/A, -10mA, -100/iA transistor 1207 R1207

    transistor d 2213

    Abstract: No abstract text available
    Text: KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circu it. Inverter, Interface circu it, D river C ircu it • B uilt in b is s R e sisto r (R , =2.2kQ, R j*47kfl) • Com plem ent to KSR 2213 ABSOLUTE MAXIMUM RATINGS (TA=25t;)


    OCR Scan     		PDF KSR1213 47kfl) transistor d 2213

    ksr1012

    Abstract: No abstract text available
    Text: KSR1012 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R*47kfl) • Complement to KSR2012 ABSOLUTE MAXIMUM RATINGS (TA=25t)


    OCR Scan     		PDF KSR1012 47kfl) KSR2012 ksr1012

    transistor marking code wts

    Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23


    OCR Scan     		PDF 47kfl) Q62702-C2339 OT-23 transistor marking code wts sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 196W PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=47kfl, R2=22kiî WXs UPON INQUIRY 1 =B Package o BCR 196W Pin Configuration II CO Marking Ordering Code III II CM


    OCR Scan     		PDF 47kfl, OT-323

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2006 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10Kfl, R2=47Kfl) • Complement to KSR1006 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSR2006 10Kfl, 47Kfl) KSR1006

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type


    OCR Scan     		PDF 47kfl) OT-323 235b05 BCR158W a53SbOS D1BD77B fiS35bD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II


    OCR Scan     		PDF 47kfl) Q62702-C2275 OT-323 fl235bG5 0E35b05 0120bfi3

    Untitled

    Abstract: No abstract text available
    Text: KSR1013 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO-92 • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(R, = 2.2K!!, R, = 47Kfl) • Complement to K S R 2 0 1 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSR1013 47Kfl) 100fxA,

    KSR1104

    Abstract: KSR2104 7K SOT23
    Text: SAMSUNG SEMIC OND UCTOR.INC KSR1104 14É D | 7 ^ 4 1 4 3 0007045 5 | NPN EPITAXIAL SILICON TRANSISTOR r- 3 5 -It SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=47Kfl, R,o47Kft)


    OCR Scan     		PDF KSR1104 o47Kft) KSR2104 r-35-11 OT-23 KSR2104 7K SOT23

    Untitled

    Abstract: No abstract text available
    Text: KSR2214 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R|=4.71d), R2=47kfl) • Com plem ent to KSR1214 ABSOLUTE MAXIMUM RATINGS <TA»25t:)


    OCR Scan     		PDF KSR2214 47kfl) KSR1214 -10/iA, -100/iA, -10mA,

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23


    OCR Scan     		PDF 47kfl, 47kfi) Q62702-C2261 OT-23 0235b05 Q12Q7b5 015D7bB

    marking bt5

    Abstract: No abstract text available
    Text: BCR 148S SIEMENS NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvaniv internal isolated Transistors driver circuit • Built in bias resistor (R1=47kiì, R2=47Kfl) 02 fi Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 47Kfl) Q62702-C2417 BCR148S r998-11-01 6235bQ5 01207bb 0E35b05 marking bt5

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 25E D 7 ^ 7 07k 0 0 0 7 3 b ö 7 FC105 T -3 7 -2 7 PNP Epitaxial Planar Silicon Composite Transìstor 2067 Switching Applications with Bias Resistances R 1=47kfi, R2=47kO 3073 Features • On-chip bias resistors (Ri = 47kft,R2= 47kfl)


    OCR Scan     		PDF FC105 47kfi, 47kft 47kfl) FC105 2SA1341, 4109TA 000731aÃ

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl)


    OCR Scan     		PDF FC106 T-35-21 47kfl) FC106 2SC3395, 4139MO

    marking code 718 sot363

    Abstract: No abstract text available
    Text: SIEMENS BCR 185S PNP Silicon Digital Transistor Array >Switching Circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in biase resistor (R ^IO kß, R2=47kfl) Type BCR 185S Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 47kfl) OT-363 marking code 718 sot363

    ksr1012

    Abstract: No abstract text available
    Text: KSR1012 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47Kfl) • Complement to KSR2012 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF KSR1012 47Kfl) KSR2012 100fiA 7Tbm42 ksr1012

    KSR2106

    Abstract: No abstract text available
    Text: KSR2106 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, =10kfl, R2=47kfl) • Complement to KSR1106 SO T-23 ABSO LUTE MAXIM UM RATINGS (TA= 2 5 t)


    OCR Scan     		PDF KSR2106 10kfl, 47kfl) KSR1106 -10mA, -100M V40FFMV) KSR2106