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Molex 0015246163 CONN HEADER R/A 16POS 4.2MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0015246163	Bulk	1,270		1	1 $5.74 10 $4.679 100 $4.0794 1000 $4.0794 10000 $4.0794	Buy Now
Avnet Americas	0015246163	Tray		16 Weeks	1,280	1 - 10 - 100 - 1000 - 10000 $3.19642	Buy Now
TE Connectivity 5084616-3 CONN RCPT 80POS SMD GOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	5084616-3	Cut Tape	520		1	1 $5.87 10 $4.785 100 $3.9007 1000 $3.9007 10000 $3.9007	Buy Now
	5084616-3	Reel	400		200	1 - 10 - 100 - 1000 $3.27548 10000 $3.27548	Buy Now
Avnet Americas	5084616-3	Reel		5 Weeks, 3 Days	1,200	1 - 10 - 100 - 1000 - 10000 $1.96403	Buy Now
Mouser Electronics	5084616-3		258			1 $4.89 10 $4.3 100 $3.44 1000 $3.28 10000 $3.09	Buy Now
Newark	5084616-3	Cut Tape	250		1	1 $5.21 10 $4.98 100 $4.66 1000 $4.66 10000 $4.66	Buy Now
	5084616-3	Reel			200	1 - 10 - 100 - 1000 $4.32 10000 $4.26	Buy Now
RS	5084616-3	Bulk		12 Weeks	200	1 - 10 - 100 - 1000 $3.64 10000 $2.77	Get Quote

Interstate Connecting Components	5084616-3					1 - 10 - 100 - 1000 - 10000 $3.245	Buy Now
Chip 1 Exchange	5084616-3		19,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	5084616-3			3 Weeks	1,200	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	5084616-3			7 Weeks	200	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Asia	5084616-3			3 Weeks, 4 Days	600	1 - 10 - 100 - 1000 $3.04399 10000 $2.84372	Buy Now
Molex 0527461633 CONN FFC BOTTOM 16POS 0.5MM R/A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0527461633	Digi-Reel	357			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Phoenix Contact 5446163 TERM BLOCK HDR 10POS VERT 5MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	5446163	Bulk			100	1 - 10 - 100 $1.46 1000 $1.46 10000 $1.46	Buy Now
Mouser Electronics	5446163		95			1 $1.67 10 $1.67 100 $1.4 1000 $1.4 10000 $1.4	Buy Now
TTI	5446163	Each	2,897		4	1 - 10 $1.66 100 $1.58 1000 $1.58 10000 $1.58	Buy Now
Master Electronics	5446163					1 - 10 - 100 $1.46 1000 $1.28 10000 $1.2	Buy Now
Sager	5446163				100	1 - 10 - 100 $2.13 1000 $1.94 10000 $1.94	Buy Now
Molex 0634461632 INSULATION PUNCH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0634461632	Bulk			3	1 - 10 $269.56 100 $269.56 1000 $269.56 10000 $269.56	Buy Now

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46163 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: General Information & Indexes US Sales Representatives. 8 8 3 2 3 1 3 11 7 2 1 2 4 15 2 1 13 1 2 4 4 15 12 4 1 6 6 14 10 14 McNamara Associates, 5936 Busch Drive, Malibu, CA 90265, Tel: 310-457-4478 Express #: 800-542-4457 Fax: 775-261-5235 email: [email protected]	Original	3115-P	PDF
PICO Electronics 47231 Abstract: 50241 PICO 49461 270 microHenry 4836 49441 50161 inductors 10 micro henry inductors 50 micro henry 4557 Text: Common EMI Mode Suppression Inductors Specifications z z z z z z All units manufactured to MIL-PRF-27, Grade 5, Class S Inductance measured at 0.1VRMS -10 KHz Dielectric Strength 1500 Volts RMS Unit has magnetic shield Windings Balanced ±1% Maximum ambient plus temp. rise limited to 130ºC ie. Maximum ambient or part no. 46283 would be	Original	MIL-PRF-27, PICO Electronics 47231 50241 PICO 49461 270 microHenry 4836 49441 50161 inductors 10 micro henry inductors 50 micro henry 4557	PDF
CY62128DV30 Abstract: CY62128EV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI CY62128EV30LL-55ZXE Text: CY62128EV30 MoBL 1 Mbit 128K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Temperature ranges– The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active	Original	CY62128EV30 CY62128DV30 CY62128EV30LL CY62128EV30LL-45SXI CY62128EV30LL-45ZAXI CY62128EV30LL-45ZXA CY62128EV30LL-45ZXI CY62128EV30LL-55ZXE	PDF
Untitled Abstract: No abstract text available Text: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features	Original	CY62128EV30	PDF
CY62128B Abstract: CY62128E CY62128ELL CY62128ELL-45SXA CY62128ELL-45SXI CY62128ELL-45ZAXI CY62128ELL-45ZXA CY62128ELL-45ZXI Text: CY62128E MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in	Original	CY62128E CY62128B CY62128ELL CY62128ELL-45SXA CY62128ELL-45SXI CY62128ELL-45ZAXI CY62128ELL-45ZXA CY62128ELL-45ZXI	PDF
ITT DBM-25P Abstract: 609-50P 0903 196 2921 HFM068A 609-50300 0903 164 2921 622-5016ES ADE-9S-1A2N-A197 622-5024ES HFM026A Text: Issued July 1996 021-861 Data Pack K Connector part number cross-references numerical order Data Sheet Page 1/2 Thomas & Betts Page 2 Harting Page 2 3M Page 3 ITT Thomas & Betts IDC connectors, cable and tooling Thomas & Betts 1016029C01 136-026 136-040	Original	1016029C01 ITT DBM-25P 609-50P 0903 196 2921 HFM068A 609-50300 0903 164 2921 622-5016ES ADE-9S-1A2N-A197 622-5024ES HFM026A	PDF
rtc ds130 Abstract: No abstract text available Text: Surge Protection AC & DC Power Photovoltaic Telecom Dataline Coaxial SURGE PROTECTORS for AC & DC Power, Photovoltaic, Telecom, Dataline, & Coaxial - 9 t h e d i t i o n , N o r t h A m e r i c a 9 th E d i t i o n North America 1 9 th E d i t i o n North America	Original	RU-105082 rtc ds130	PDF
Untitled Abstract: No abstract text available Text: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description Features The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62128EV30	PDF
Untitled Abstract: No abstract text available Text: THIS SPEC IS OBSOLETE Spec No: 001-06348 Spec Title: CY7C1248V18, CY7C1250V18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Sunset Owner: Jayasree Nayar Replaced by: None CY7C1248V18 CY7C1250V18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)	Original	CY7C1248V18, CY7C1250V18 36-Mbit CY7C1248V18 CY7C1250V18	PDF
AN1064 Abstract: CY62126DV30 CY62126EV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE Text: MoBL ,CY62126EV30 1-Mbit 64K x 16 Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits[1]. This device features advanced circuit design to provide ultra low active current. This	Original	CY62126EV30 CY62126EV30 AN1064 CY62126DV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE	PDF
CY7C1250V18-333BZC Abstract: CY7C1246V18 CY7C1248V18 CY7C1250V18 CY7C1257V18 Text: CY7C1246V18 CY7C1257V18 CY7C1248V18 CY7C1250V18 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • • • • 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36) 300 MHz to 375 MHz clock for high bandwidth	Original	CY7C1246V18 CY7C1257V18 CY7C1248V18 CY7C1250V18 36-Mbit CY7C1246V18, CY7C1257V18, CY7C1248V18, CY7C1250V18 CY7C1250V18-333BZC CY7C1246V18 CY7C1248V18 CY7C1257V18	PDF
Untitled Abstract: No abstract text available Text: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62128E	PDF
48381 Abstract: inductors 10 micro-henry Text: Common EMI Mode Suppression Inductors Common EMI Mode Suppression Inductors Specifications All units manufactured to MIL-PRF-27, Grade 5, Class S Inductance measured at 0.1VRMS -10 KHz Dielectric Strength 1500 Volts RMS Unit has magnetic shield Windings Balanced ±1%	Original	MIL-PRF-27, 48381 inductors 10 micro-henry	PDF
Untitled Abstract: No abstract text available Text: CY62128E MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features The CY62128E is a high-performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in	Original	CY62128E CY62128B 32-lead	PDF

Untitled Abstract: No abstract text available Text: CY62128E MoBL 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • • • • The CY62128E is a high-performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.	Original	CY62128E CY62128B 32-lead	PDF
SKIIP 33 nec 125 t2 Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.	Original	734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302	PDF
Untitled Abstract: No abstract text available Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62126EV30 I/O15)	PDF
Untitled Abstract: No abstract text available Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C	Original	CY62126EV30 CY62126DV30	PDF
CY7C1250V18-333BZC Abstract: CY7C1248V18 CY7C1250V18 Text: CY7C1248V18 CY7C1250V18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency Features Functional Description • 36-Mbit Density (2M x 18, 1M x 36) ■ 300 MHz to 375 MHz Clock for high Bandwidth ■ 2-word Burst for reducing Address Bus Frequency	Original	CY7C1248V18 CY7C1250V18 36-Mbit CY7C1248V18, CY7C1250V18 CY7C1250V18-333BZC CY7C1248V18	PDF
Untitled Abstract: No abstract text available Text: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62128E	PDF
Untitled Abstract: No abstract text available Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62126EV30 I/O15)	PDF
AN1384 Abstract: No abstract text available Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This	Original	CY62126EV30 I/O15) 727-CY26EV30LL45ZSXI CY62126EV30LL-45ZSXI AN1384	PDF
Untitled Abstract: No abstract text available Text: VIS Preliminary 4616321B/4616322B 262,144x32x2-Bit CMOS Synchronous Graphic RAM Overview The V G 4616321 2 SG R AM is a high-speed C M O S syn ch ro n o u s g raphics RAM containing 16M bits. It is internally configured as a dual 256K x 32 DRAM w ith a synch ro n o u s interface (all signals are registered on	OCR Scan	VG4616321B/VG4616322B 144x32x2-Bit G5-0145	PDF
ITE 8987 Abstract: Z436 transistor tic 913 4-701 76141 EE 19 Switching Transformer ML/82x33/587/OS/ITE 8987 Text: 80C26 CMOS Ethernet Interface Adapter in 28L Package T e c h n o lo g y , in c o rp o ra t» d PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol ¡ identifies product as AutoD UPLEX devioe. • Provides AutoDUPLEXT" Detect Function for Full Duplex LAN Controllers, Doubling Bandwidth	OCR Scan	80C26 10Base-T ITE 8987 Z436 transistor tic 913 4-701 76141 EE 19 Switching Transformer ML/82x33/587/OS/ITE 8987	PDF

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46163 Datasheets Context Search

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PICO Electronics 47231

CY62128DV30

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CY62128B

ITT DBM-25P

rtc ds130

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AN1064

CY7C1250V18-333BZC

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48381

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SKIIP 33 nec 125 t2

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CY7C1250V18-333BZC

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AN1384

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ITE 8987