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    738P

    Abstract: 713qv 09313 0d313
    Text: 3UHOLPLQDU\ *6;495=4;269%048324662433 GSI Technology 44<#%*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 490E#3LSHOLQHG#DQG# ORZ#WKURXJK# 4830433#0K] 6169#9'' 5189#)#6169#9''4 6\QFKURQRXV#1%7#65$0 )HDWXUHV )XQFWLRQDO#'HVFULSWLRQ ‡#40#[#4;#DQG#845N#[#69#&RQILJXUDWLRQV1


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    7369

    Abstract: 80433 643p 0d313 637eL 93LQ 70433
    Text: *6,#7HFKQRORJ\# 3LQ#74 3/#%*$/#)30%*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS *6;734;26526972%2804;3249924832433 #589.#[#4;/#45;.#[#65/#45;.#[#69 70E#6\QF#%XUVW#65$0V )HDWXUHV ‡#) ‡#6LQJOH#&\FOH#'HVHOHFW#+6&',#2SHUDWLRQ1


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    8363s

    Abstract: 0d313
    Text: Preliminary *6:9357% %*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 589.#[#57 90E#$V\QFKURQRXV#65$0 HDWXUHV 43/#45/#48QV 6169#9'' 44<#%XPS#%DOO#*ULG#$UUD\#3DFNDJH ‡#)DVW#DFFHVV#WLPH=#43/#45/#48QV ‡#& ‡#6LQJOH#6169#“#3169#SRZHU#VXSSO\


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    Untitled

    Abstract: No abstract text available
    Text: *6:4357728 97.#[#57 4180E#$V\QFKURQRXV#65$0 74 3/#)3%*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS )HDWXUHV ;/#43/#45/#48QV 6169#9'' )LQH#3LWFK#%*$#%XPS#&RQILJXUDWLRQ ‡#)DVW#DFFHVV#WLPH=#;/#43/#45/#48QV ‡#&


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    7199pd

    Abstract: 9031
    Text: Preliminary *6:6357% %*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 45;.#[#57 60E#$V\QFKURQRXV#65$0 HDWXUHV 43/#45/#48QV 6169#9'' 44<#%XPS#%DOO#*ULG#$UUD\#3DFNDJH ‡#)DVW#DFFHVV#WLPH=#43/#45/#48QV ‡#& ‡#6LQJOH#6169#“#3169#SRZHU#VXSSO\


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    558P

    Abstract: 9031
    Text: Preliminary *6:;43;% %*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 40#[#; ;0E#$V\QFKURQRXV#65$0 HDWXUHV 43/#45/#48QV 6169#9'' 3LQ#'HVFULSWLRQV ‡#)DVW#DFFHVV#WLPH=#43/#45/#48QV1 ‡#& ‡#6LQJOH#6169#“#3169#SRZHU#VXSSO\1


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    Untitled

    Abstract: No abstract text available
    Text: *6:743773262-/#7623 &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS #40#[#7# 70E#$V\QFKURQRXV#65$0 HDWXUHV ;/#43/#45/#48QV 6169#9'' &HQWHU#9''#)#966 62-#40#[#7#3LQ#&RQILJXUDWRQ ‡#)DVW#DFFHVV#WLPH=#;/#43/#45/#48QV ‡#&


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    43QV

    Abstract: 6633P 3143 6633-P
    Text: *6:443;732-26-28 62-/#7623/# 30%*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 45;.#[#;# 40E#$V\QFKURQRXV#65$0 )HDWXUHV 43/#45/#48QV 6169#9'' &HQWHU#9''#)#966 62-#)#76230,#45;.#[#;#3LQ#&RQILJXUDWLRQ ‡#)DVW#DFFHVV#WLPH=#43/#45/#48QV ‡#&


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    Untitled

    Abstract: No abstract text available
    Text: Preliminary *6:;449% %*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 845.#[#49 ;0E#$V\QFKURQRXV#65$0 HDWXUHV 43/#45/#48QV 6169#9'' 3LQ#'HVFULSWLRQV ‡#)DVW#DFFHVV#WLPH=#43/#45/#48QV1 ‡#& ‡#6LQJOH#6169#“#3169#SRZHU#VXSSO\1


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    w2 417

    Abstract: GR 733 w542 43QV
    Text: *6:5449732-2728 45;.#[#49 50E#$V\QFKURQRXV#65$0 62-/#7623/# 30%*$/#74)3 &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS )HDWXUHV ;/#43/#45/#48QV 6169#9'' &HQWHU#9''#)#966 62-#45;.#[#49#3LQ#&RQILJXUDWLRQ ‡#)DVW#DFFHVV#WLPH=#;/#43/#45/#48QV ‡#&


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    Untitled

    Abstract: No abstract text available
    Text: Preliminary *6:;465% %*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 589.#[#65 ;0E#$V\QFKURQRXV#65$0 HDWXUHV 43/#45/#48QV 6169#9'' 3LQ#'HVFULSWLRQV 6\PERO 'HVFULSWLRQ $3#WR#$4: $GGUHVV#LQSXW & &KLS#HQDEOH#LQSXW '4$4#72#'4$; %\WH#$#'DWD#LQSXW2RXWSXW '4%4#72#'4%; %\WH#%#'DWD#LQSXW2RXWSXW


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    Untitled

    Abstract: No abstract text available
    Text: *6:443;732-26-28 62-/#7623/# 30%*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 45;.#[#;# 40E#$V\QFKURQRXV#65$0 )HDWXUHV 43/#45/#48QV 6169#9'' &HQWHU#9''#)#966 62-#)#76230,#45;.#[#;#3LQ#&RQILJXUDWLRQ ‡#)DVW#DFFHVV#WLPH=#43/#45/#48QV ‡#&


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    31353

    Abstract: 9031 31763 31346 31663 46247 GR 733 44wr qf106
    Text: *6:443;732-26-28 62-/#7623/# 30%*$ &RPPHUFLDO#7HPS ,QGXVWULDO#7HPS 45;.#[#;# 40E#$V\QFKURQRXV#65$0 )HDWXUHV 43/#45/#48QV 6169#9'' &HQWHU#9''#)#966 62-#)#76230,#45;.#[#;#3LQ#&RQILJXUDWLRQ ‡#)DVW#DFFHVV#WLPH=#43/#45/#48QV ‡#&


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    l0915

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS NT n ìc h ìc o n S c re w T e rm in a l T y p e , W id e T e m p e r a tu re R a n g e series • Load life of 5 ,0 0 0 hours 2 ,0 0 0 hours for 1 0 -2 5 0 V application of ripple current at + 1 0 5 ° C . • E xtended voltage range from 10V up to 4 5 0 V .


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    PDF --450V) 0--450V 120Hz, 51X120 5X110 2X120 2X150 90X150 90X220 100X250 l0915

    c303 diode

    Abstract: 5N35 SEFM4N45
    Text: S G S-TH0NS0N D?E 73 C 17579 SEFM4N45/SEFP4N45 SEFM5N35/SEFP5N3S SEFM5N40/SEFP5N40 7 eI2 t1237 QOlâQflS 4 D | D ~ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    PDF SEFM4N45/SEFP4N45 SEFM5N35/SEFP5N3S SEFM5N40/SEFP5N40 t1237 300jus, SGSP364 C-304 SEFM5N35/SEFP5H35; SEFH5N40/SEFP5N40 100/is c303 diode 5N35 SEFM4N45

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643