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    45WATTS Search Results

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    VTB22FWC

    Abstract: VTB23FWD CA95037 VTB23FWC
    Text: DC/DC SWITCHING POWER SUPPLY DC INPUT 12,24,48, 110 DUAL OUTPUT 45WATTS VTB-WCx/VTB-WD SERIES General Description Features 1. 2. 3. Dimension: 96W x 160L × 33H Variety of Models Chassis mount type Compact and High Efficiency DC INPUT: 12V Input Characteristics


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    45WATTS VTB21FWC VTB22FWC VTB23FWC VTB24FWC V-16V VTB23FWD CA95037 PDF

    VTB01C24

    Abstract: VTB01C48B
    Text: DC/DC SWITCHING POWER SUPPLY DC INPUT 12,24,48, 110 MULTIPLE OUTPUT 45WATTS VTB-00Cx/VTB-00D SERIES General Description Features Dimension: 96W x 160L × 33H 1. 2. 3. Variety of Models Chassis mount type Compact and High Efficiency DC INPUT: 12V Input Characteristics


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    45WATTS VTB-00Cx/VTB-00D VTB01C12 VTB01C12B VTB03C12 VTB04C12 V-16V VTB01C24 VTB01C24B VTB03C24 VTB01C24 VTB01C48B PDF

    luxtron 800

    Abstract: fr108 FT10301N0050J FT10800N0050J02 FT10515N0050J DK004 LT11020T0050J FT103 ft10515n0050j01 resistor catalog
    Text: AMERICAN TECHNICAL CERAMICS HIGH POWER RESISTIVE PRODUCTS AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Table of Contents ATC: Company


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L88026 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


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    L88026 PDF

    IRL19

    Abstract: No abstract text available
    Text: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an


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    T1L2003028-SP 500MHz 30watts 45Watts 500MHz-2GHz IRL19 PDF

    Untitled

    Abstract: No abstract text available
    Text: EEMB BATTERY 45W Solar module No.ESP045 THE CUSTOM DESIGN: The left picture shows the format of this solar module. It could be changed according to the need of customer or designer. All the figures and parameters rely on the actual need of user. SPECIFICATIONS*


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    ESP045 45Watts 36pcs 800mm 541mm Insulation100M PDF

    Untitled

    Abstract: No abstract text available
    Text: High Power Resistive Products Resistors and Terminations: Engineering Guidelines DESIGN, MEASUREMENT AND PERFORMANCE As the wireless revolution extends component requirements upward in frequency, higher in operating power, and smaller in size, performance demands on resistive devices grow ever


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    MTT-33, PDF

    LX803

    Abstract: No abstract text available
    Text: polyfet rf devices LX803 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended


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    LX803 LX803 PDF

    fr108

    Abstract: Ever Ohms chip resistor
    Text: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S ATC Resistors and Terminations: Engineering Guidelines Design, Measurement and Performance Structures, Implementations, and Configurations . . . . . . . . . . . . . . . . . . . . .36 Specs and Specmanship . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37


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    84-WA/HT-110. MTT-33, fr108 Ever Ohms chip resistor PDF

    FT10515N0050J

    Abstract: luxtron 800 FA10975N01DBFBK high power dummy load 50 ohm 200w FT10870N0050J03 1945 LT CT12010T0050J CT11020T0050J RO4350 30mil FT109
    Text: AMERICAN TECHNICAL CERAMICS HIGH POWER RESISTIVE PRODUCTS AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Table of Contents ATC: Company


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    1800 ldmos

    Abstract: T1L2003028-SP 28V LT 862 ADE CDM 03 T1L2003028-SP 013964 3442-16 TRANSISTOR table
    Text: TriQuint It TM POWER BAND SEMICONDUCTOR T 1L2003028-S P 30 W, 28V, 500 M H z -2 G Hz, P o w e r b a n d L D M O S RF P o w e r T r a n s is t o r In tr o d u c tio n Table 1. T h e rm a l C h a ra c te ris tic s Parameter The T1L2003028-SP is a POWERBAND™ discrete


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    T1L2003028-SP T1L2003028-SP 500MHz 30watts 45Watts 500MHz-2000MHz VDo-28V 1800 ldmos T1L2003028-SP 28V LT 862 ADE CDM 03 013964 3442-16 TRANSISTOR table PDF

    Untitled

    Abstract: No abstract text available
    Text: TriQuint PüwERBAND SEMICONDUCTOR TM T 1L2003028-S P 30 W, 28V, 500 M H z -2 G Hz, P o w e r b a n d L D M O S RF P o w e r T r a n s is t o r Introduction T a ble 1. T h e rm a l C h a ra c te ris tic s Parameter The T1L2003028-SP is a POWERBAND™ discrete


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    1L2003028-S T1L2003028-SP 500MHz 30watts 45Watts PDF