Untitled
Abstract: No abstract text available
Text: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES
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G01341Q
4TLS03
0G13411
HD14070B
1407IB
HD14556B
HD14558B
HD14560B
HD14562B
HD14072B
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Untitled
Abstract: No abstract text available
Text: HN62412 Series HN62422 Series 2M 128K x 16-bit and (256K x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62412/HN62422 Series is a 2-Megabit CMOS Mask ROM organized as 132,072 x 16-bit and 262,144 x 8-bit. The low power consumption of this device makes it ideal for
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HN62412
HN62422
16-bit)
HN62412/HN62422
16-bit
40-pin
44-lead
HN62412)
HN62422)
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HM624256
Abstract: hm624256lp static ram 4802
Text: HITACHI/ LOGIC/ARRAYS/PIEM STE 44TbS03 D HM624256 Series- G01bS27 5 T -4 6 -2 3 -1 4 262144-WORD x 4-BIT HIGH SPEED CMOS STATIC RAM The Hitachi HM624256 is a high sp ee d 1M static RAM organized a s 256-kword x 4-bit. It realizes high sp ee d a cc e ss
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HM624256
262144-WORD
256-kword
32-bit
HM624256,
400-mll
28-pln
hm624256lp
static ram 4802
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HN27C301G-20
Abstract: HN27C301G-17 HN27C301G HN27C301G25 HN27C301G-25 HN27C301G20 tos fgs 50
Text: HITACHI/ LOG IC/ AR RA YS /M EM 20E D • 44Tb203 0 G1 4 7 3 b 4 H N 27C 301G S e rie s 131072-word X 8-bit CMOS U.V. Erasable and Programmable ROM ■ FEATURES • Single Power S u p p ly . +5V ±5% • Fast High-Reliability Program Mode and Fast HighRellability Page Program Mode
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HN27C301G
441bSD3
0Q1473b
131072-word
170/200/250ns
50mW/MHz
28pin
T-46-13-29
HN27C301G-20
HN27C301G-17
HN27C301G25
HN27C301G-25
HN27C301G20
tos fgs 50
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Untitled
Abstract: No abstract text available
Text: HN27C4096H Series 4M 256K x 16-bit UV EPROM • DESCRIPTION The Hitachi HN27C4096H is a 4-Megabit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 262,144 x 16-bits. The HN27C4096H features high speed access times of 70 and
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HN27C4096H
16-bit)
16-bits.
32-bit
40-pin
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Untitled
Abstract: No abstract text available
Text: HM5116165A Series Preliminary 1,048,576-word x 16-btt Dynamic Random Access Memory Rev. 0.0 Jul. 20.1994 HITACHI T be H itachi HM 5116165A is a CMOS dynamic R A M organized 1,048.576 w ords x 16 bits. It employs the most advanced CMOS technology for h ig h p e rfo rm a n c e an d low p o w e r.
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HM5116165A
576-word
16-btt
116165A
mW/495
mW/440
5116165AJ
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Untitled
Abstract: No abstract text available
Text: Preliminary H M 5 1 1 6 1 6 0 A / A L S e r ie s 1,048,576-word x 16-bit Dynamic Random Access Memory The H ita ch i H M 5116160A /A L is a CM O S dynamic RA M organized 1,048,576 words x 16 b its. It em ploys the most advanced CM O S technology for high performance and low power.
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576-word
16-bit
116160A
HM5116160A/AL
mW/495
mW/440mW
HMS116160A/AL
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Untitled
Abstract: No abstract text available
Text: HB56HW164DB-7A/8A Preliminary 1,048,576-Word x 64-Bit High Density Dynamic RAM Module HITACHI Rev.O. 1 Nov. 13,1995 The HB56HW164DB is a 1M x 64 dynamic RAM Ordering Information Small Outline Dual In-line Memory Module S.O.DIMM , mounted 4 pieces of 16-Mbit DRAM (HM51W16165ATT)
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HB56HW164DB-7A/8A
576-Word
64-Bit
HB56HW164DB
16-Mbit
HM51W16165ATT)
24C02)
HB56HW164DB-7A
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Untitled
Abstract: No abstract text available
Text: ADE-203-072C Z H M 6 7 W 1 6 6 4 S e r i e s _ J a n .0 3 *1 9 9 4 Target Specification 65536-W ord x 16-Bit High Speed Bi-CMOS Static RAM • DESCRIPTION TheHM67W1664 is asynchronous high speed static RAM organized as 64K word x 1Gbit. These operate 3.3V. It realizes
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ADE-203-072C
5536-W
16-Bit
TheHM67W1664
10/12ns
44TbE03
00E57Ã
HM67W1664JP
CP-44D)
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27C101
Abstract: 27C10
Text: H I T A C H I / LOGIC/ARRAYS/flEM 20E D Hi M 4 ‘ib203 0 0 Î 4 7 2 Ô S • S e r i e s - T - / 6 -/3 -ZÏ H N 2 7 C I O I G 131072-word X 8-bit C M O S U.V. Erasable and Programmable R O M ■ FEA T U R ES • Single Power S u p p ly . +5V ±5%
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ib203
131072-word
170/200/250ns
50mW/MHz
44U203
HN27C101G
T-46-13-29
27C101
27C10
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Untitled
Abstract: No abstract text available
Text: HB56UW872E Series 8388608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-704A Z Rev. 1.0 Jan. 15, 1997 Description The HB56UW872E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The
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HB56UW872E
8388608-word
72-bit
ADE-203-704A
64-Mbit
HM5164805ATT)
16-bit
74LVT16244)
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Untitled
Abstract: No abstract text available
Text: HI T A C H I / LOGIC/ARRAVS/riEM a*JE J> 4*Hba03 0Qlt.b57 1 HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES • • HM65256BP Series Single 5V ±10% High Speed Access Time CE Access T i m e . 100/120/150/200ns
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Hba03
HM65256B
32768-word
HM65256BP
100/120/150/200ns
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Untitled
Abstract: No abstract text available
Text: HM514102B/BL Series 4,194,304-word x 1-bit Dynamic RAM The Hitachi HM514102B/BL is a CMOS dynamic RAM organized 4,194,3 0 4 -w o rd x 1-bit. H M 514102B /B L has realized higher density, higher perform ance and various functions by employing 0.8 pm CMOS process technology and
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HM514102B/BL
304-word
514102B
20-pin
20-pin
HM514102BS/BLS-7
HM514102BS/BLS-8
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Untitled
Abstract: No abstract text available
Text: H M 5 1 4 1 9 0 A /A L Preliminary S e r ie s 262,144-word x 18-bit Dynamic Random Access Memory The Hitachi HM514190A/AL are CMOS dynamic RAM o rg an ized as 262,1 4 4 -w o rd x 18-bit. HM 514190A/AL have realized higher density, h igher perform ance and various functions by
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144-word
18-bit
HM514190A/AL
18-bit.
14190A/AL
400mil
40-pin
475-mil
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MMT-20
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/MEM S1E 441fa203 G 0 1 b 4 ô 0 HM6709 S fi©S — Preliminary T -4 6 -2 3 -1 0 65536-Word x 4-Bit High Speed Static RAM with OE • FEATURES • Super Fast Access Tim e. , . • Fast OE Access T im e
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HM6709
65536-Word
441fa203
G01b4Ã
20/25ns
350mW
HM6709JP-20
HM6709JP-25
CP-28DN)
T-46-23-10
MMT-20
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