BL 3030L
Abstract: No abstract text available
Text: fc>lE J> m 44TbED3 D D E l i n E3E • H I T E HM621400 Series- Preliminary 4194304-word x 1-bit High Speed CMOS Static RAM The Hitachi HM621400 is a high speed CMOS static RAM organized 4 Mword x lbit. It realizes higher performance and low power consumption
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44TbED3
HM621400
4194304-word
BL 3030L
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Untitled
Abstract: No abstract text available
Text: HB56AW 872E Series 8388608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-707A Z Rev. 1.0 Jan. 10,1997 Description The HB56AW872E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications.
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HB56AW
8388608-word
72-bit
ADE-203-707A
HB56AW872E
64-Mbit
HM5164800ATT)
16-bit
74LVT16244)
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B203 A2
Abstract: HM5118165B HM5118165BJ-6 HM5118165BJ-7 HM5118165BJ-8 HM5118165BLJ-7 HM5118165BLJ-8 HM5118165BTT-6 HM5118165BJ6 Hitachi Scans-001
Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended
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HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
B203 A2
HM5118165BJ-6
HM5118165BJ-7
HM5118165BJ-8
HM5118165BLJ-7
HM5118165BLJ-8
HM5118165BTT-6
HM5118165BJ6
Hitachi Scans-001
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A02HB
Abstract: HM51W4800AL FA203
Text: HM51W4800A/AL Series Preliminary 52 4,28 8-w o rd X 8-b it D y n a m ic R and o m A c ce ss M em ory T he H ita c h i H M 5 1 W 4 8 0 0 A /A L a re C M O S dynamic RAM organized as 524,288-word x 8-bit. H M 51W 4800A/AL have realized higher density, h ig h e r p erfo rm a n c e and v ario u s fu n c tio n s by
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HM51W4800A/AL
288-word
400-mil
28-pin
ns/80
A02HB
HM51W4800AL
FA203
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M514400
Abstract: m5144 hitachi 12.1 hm514400b M514400BS M514400B
Text: HM514400B/BL Series 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it D y n a m ic R a n d o m A c c e s s M e m o ry T he H itach i H M 514400B is a CM O S dynam ic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w o rd s x 4 b its. HM 514400B has realized higher density, higher perform ance and various functions by employing
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HM514400B/BL
576-word
HM514400B
300-mil
20-pin
400-mil
M514400
m5144
hitachi 12.1
M514400BS
M514400B
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Untitled
Abstract: No abstract text available
Text: HB56RW832DZJ Series 8,388,608-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-768A Z Rev. 1.0 Apr. 21, 1997 Description The HB56RW832DZJ is a 8M x 32 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W17400) sealed in TCP package. An outline
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HB56RW832DZJ
608-word
32-bit
ADE-203-768A
16-Mbit
HM51W17400)
72-pin
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Untitled
Abstract: No abstract text available
Text: HB526C272EN-10IN, HB526C472EN -10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15,1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
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HB526C272EN-10IN,
HB526C472EN
-10IN
576-word
72-bit
ADE-203-693C
HB526C272EN,
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Z1132
Abstract: No abstract text available
Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended
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HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
Z1132
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Untitled
Abstract: No abstract text available
Text: HM5116160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-475 Z Preliminary Rev. 0.0 Dec. 6, 1995 Description The Hitachi HM5116160B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116160B offers Fast Page
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HM5116160B
1048576-word
16-bit
ADE-203-475
576-word
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: HM5116165A S e rie s 1,048,576-word x Preliminary 16-bit Dynamic Random A cce ss Memory Rev. 0.0 Jul. 20. 1994 H IT A C H I T h e H ita ch i H M 5 1 1 6 1 6 5 A is a C M O S d yn am ic R A M o rg a n ized 1 ,0 4 8 .5 7 6 w o rd s x 16 b its. It em ploys the m ost advanced C M O S technology for
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HM5116165A
576-word
16-bit
mW/495
mW/440
HM511616SA
HM5116165AJ
CP-42D)
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Untitled
Abstract: No abstract text available
Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CM OS technology for high performance and low power. The HM5118165B offers Extended
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HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
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HM514170CJ7
Abstract: No abstract text available
Text: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM 51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 Jim CMOS process
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HM514170C
HM51S4170C
144-word
16-bit
4170C
16-bit.
HM514170CJ7
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HN27C256AP-12
Abstract: HN27C256AG-10 hitachi eprom DG-28 HN27C256AFP-12T HN27C256AFP-15T HN27C256AG-12 HN27C256AP-15 Hitachi Scans-001
Text: HN27C256A Series Maintenance Only 256K 32K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C256A is a256-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 32,768 x 8-bits. The HN27C256A features fast address access times and low
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HN27C256A
a256-Kilobit
28-pin
28-lead
HN27C256AP-12
HN27C256AG-10
hitachi eprom
DG-28
HN27C256AFP-12T
HN27C256AFP-15T
HN27C256AG-12
HN27C256AP-15
Hitachi Scans-001
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