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    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


    Original     		PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D

    K6R1004C1D

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.


    Original     		PDF K6R1004C1D 256Kx4 32-SOJ-400 K6R1004C1D

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J

    K6R4008V1D

    Abstract: K6R4016C1D 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4008V1D K6R4016C1D 44-TSOP2

    K6R1016C10

    Abstract: k6r1016c1c
    Text: K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.


    Original     		PDF K6R1016C1C-C/C-L, K6R1016C1C-I/C-P 64Kx16 48-fine K6R1016C1C-Z K6R1016C1C-F 80/Typ. 25/Typ. K6R1016C10 k6r1016c1c

    K6R4016V1D-J

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4016V1D-J

    Untitled

    Abstract: No abstract text available
    Text: K6R1016V1C-C/C-L, K6R1016V1C-I/C-P for AT&T CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R1016V1C-C/C-L, K6R1016V1C-I/C-P 64Kx16 48-fine K6R1016V1C-Z K6R1016V1C-F I/O16 002MIN

    K6R4016V1D-J

    Abstract: K6R4008V1D
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4016V1D-J K6R4008V1D

    KM616V4002C

    Abstract: No abstract text available
    Text: Back PRELIMPreliminaryPPPPPPPPPINARY KM616V4002C/CL, KM616V4002CI/CLI Preliminary CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data


    Original     		PDF KM616V4002C/CL, KM616V4002CI/CLI 256Kx16 80/Typ. 25/Typ. KM616V4002C

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    44-SOJ

    Abstract: 44TSOP 4Mx1
    Text: H I G H S P E E D C M O S S TAT I C R A M 4M DENSITY • 4M HIGH SPEED STATIC RAM’S WITH ACCESS TIMES FROM 12ns TO 20ns 4M HIGH SPEED CMOS STATIC RAM • • • • • • • • • • • • • • • • • • • • • • • • • •


    Original     		PDF PD434001ALE-12 PD434001ALE-15 PD434001ALE-17 PD434001ALE-20 PD434001ALLE-15 PD434001ALLE-17 PD434001ALLE-20 PD434004ALE-12 PD434004ALE-15 PD434004ALE-17 44-SOJ 44TSOP 4Mx1

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020DV33 512 K 32 K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption when deselected. • Pin-and function-compatible with CY7C1020CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 60 mA @ 10 ns


    Original     		PDF CY7C1020DV33 I/O15)

    Scans-0012741

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 KM616V4002BI/BLI 44-SOJ-400 44-TSO P2-400F Scans-0012741

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6161002B, KM6161002BI 6 4 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10mA(Max.) Operating KM6161002B - 8 : 200 mA(Max.)


    OCR Scan     		PDF KM6161002B, KM6161002BI KM6161002B KM6161002BJ 44-SOJ-400 KM6161002BT 44-TSOP2-4QOF

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 BiCMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan     		PDF KM616B4002 256Kx16

    Z812

    Abstract: No abstract text available
    Text: KM6164002/L CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60 mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/; A (Max) Operating : KM6164002-20 : 250mA (Max.)


    OCR Scan     		PDF KM6164002/L KM6164002-20 250mA KM6164002-25 240mA KM6164002-35 220mA KM684002J/U 44-SOJ-400 Z812

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17: KM616V1002A-20 KM616VF I/016

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 D e sig n T a rg e t


    OCR Scan     		PDF KM616B4002 256Kx16 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002A-12 : 220 mA(Max.)


    OCR Scan     		PDF KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A-17 161002A KM6161002AJ 44-SOJ-400 KM6161002AT 44-TSOP2-400F KM6161002A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002C/CL, KM616V1002CI/CLI PRELIMINARY CMOS SRAM Document Tills 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 KM616V1002 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 200/195/190mA 44-SOJ-400