Untitled
Abstract: No abstract text available
Text: HI TACHI / OPTOELECTRONI CS IñE D • 44Tb2GS HL1221C GOlOñil 2 ■ InG aA sP LD T - Li l ' ~ O S ' Description F 'M '- f r f HL1221C is a 1.2 //m InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com
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44Tb2GS
HL1221C
HL1221C
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HL1221C
Abstract: Hitachi Scans-001
Text: HI TACHI / OPTOELECTRONI CS IñE D • 44Tb2GS HL1221C GOlOñil 2 ■ InG aA sP LD T - Lil'~ O S' Description Z7 HL1221C is a 1.2 //m InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com m unications and various other types of optical
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HL1221C
44Tb2GS
HL1221C
Hitachi Scans-001
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2SK553
Abstract: DIODE T25 4 Jo 2SK552 J5111 H12B Hitachi Scans-001
Text: 2SK552,2SK553— blE D • 44^505 DG13DÖ3 TTfl iH i m HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • L ow O n -R e s is ta n c e . • H ig h S p e e d S w itc h in g . • L o w D riv e C u r r e n t. •
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44TtjSQS
DG13DÃ
2SK552
2SK553
O-220AB)
0D130Ã
2SK552,
2SK553
441b2QS
DIODE T25 4 Jo
J5111
H12B
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: ‘tM'K.gOS 0013533 Tfi? » H i m 2SK1764 HITACHI/ OPTOELECTRONICS Silicon N Channel MOS FET Application blE I UPAK Low frequency amplifier High speed switching Features • Low on-resistance • High speed switching • Suitable for switchingregulator, DC-DC
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2SK1764
QD13537
DD1353fl
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HL1323
Abstract: No abstract text available
Text: HL1323DM InGaAsP LD Description The HL1323DM is a 1.3 pm band InGaAsP laser diode with a double heterostructure. It is suitable as a light source for optical fiber communication systems, such as LAN, CATV, and LJN. Features Fiber Specifications • Long wavelength output: Ap = 1260 to 1340 nm
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HL1323DM
HL1323DM
44Tb2GS
HL1323
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Untitled
Abstract: No abstract text available
Text: HITACHI/COPTOELECTRONICS S l4E D • G012D32 HL7832G/HG bMT « H i m G aAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play
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G012D32
HL7832G/HG
HL7832G/HG
HL7832HG)
001203b
HL7832G)
T-41-05
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2SK641
Abstract: 2SK642
Text: blE T> m 4 4 ^ 2 0 5 ÜD13114 4T1 2SK641, 2SK642- IHIT4 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator and
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D13114
2SK641,
2SK642SILICON
2SK641
2SK642
001311b
44Tb2GS
-2SK641,
2SK642
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Untitled
Abstract: No abstract text available
Text: HE8403SG/ML GaAIAs IRED Description The HE8403SG/ML are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance
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HE8403SG/ML
HE8403SG/ML
HE8403SG:
HE8403ML:
HE8403ML)
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Untitled
Abstract: No abstract text available
Text: HL1521 A/AC InGaAsP LD Description The HL1521A/AC are 1.55 nm band laser diodes with a double heterostructure. Features Long wavelength output: = 1530 to 1570 nm 5 mW CW operation at room temperature Fast pulse response: tp tf < 0.5 ns Package Type • HL1521 A: A1
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HL1521
HL1521A/AC
HL1521AC:
cJb20S
D0143flh
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2SK1205
Abstract: No abstract text available
Text: MM1b205 GQ13253 022 • H I T M 2 S K 1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. Gate 2. Drain F lan g e 3. Source (D im ensions i ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown
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2SK1205
MM1b205
GQ13253
2SK1205
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