Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/HEM ÌE Î ËJ 44Tb203 DOlOBñT D 92D HD74HC147 Ü J ~ -¿ 7 - 2 l~ S 7 10389 0 10-to-4-line Priority Encoder The H D 7 4 H C 1 4 7 features priority encoding of the inputs to ensure that only the highest order data line is encoded. Nine
|
OCR Scan
|
PDF
|
44Tb203
HD74HC147
10-to-4-line
0D1D315
T-90-20
|
Untitled
Abstract: No abstract text available
Text: HITACHI/ L0GIC/ARRAYS/HEP1 TE D E # 44Tb203 □010534 S 92D HD74HC563,HD74HC573 * When the latch enable LE inpu t is high, the Q outputs o f HD74HC563 w ill fo llo w the inversion o f the D inputs and £ 10 53 4 D T-46 -0 7 -1 1 Octal Transparent Latches
|
OCR Scan
|
PDF
|
44Tb203
HD74HC563
HD74HC573
HD74HC573
HD74HC563
0D1D315
|
Untitled
Abstract: No abstract text available
Text: blE J> m 44Tb203 Ü023MSS aTO • HITE HM5116101 Series — hitachi/ logic/arrays/mem 16,777,216-Word x 1-Bit Dynamic Random Access Memory The H itachi H M 5116101 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It employs the most advanced CMOS technology for
|
OCR Scan
|
PDF
|
44Tb203
023MSS
HM5116101
216-Word
HM5I1610I
HM5116101J-8
400-mil
24/28-pin
CP-24DA)
|
HN27C301G-20
Abstract: HN27C301G-17 HN27C301G HN27C301G25 HN27C301G-25 HN27C301G20 tos fgs 50
Text: HITACHI/ LOG IC/ AR RA YS /M EM 20E D • 44Tb203 0 G1 4 7 3 b 4 H N 27C 301G S e rie s 131072-word X 8-bit CMOS U.V. Erasable and Programmable ROM ■ FEATURES • Single Power S u p p ly . +5V ±5% • Fast High-Reliability Program Mode and Fast HighRellability Page Program Mode
|
OCR Scan
|
PDF
|
HN27C301G
441bSD3
0Q1473b
131072-word
170/200/250ns
50mW/MHz
28pin
T-46-13-29
HN27C301G-20
HN27C301G-17
HN27C301G25
HN27C301G-25
HN27C301G20
tos fgs 50
|
Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/MEM D e | 44Tb203 DD10434 1 92 D HD74 HC189 • 10434 D 64-bit Random Access Memory In fo rm a tio n to be stored in the m e m o ry is w ritte n in to th e | PIN ARRANGEMENT selected address lo c a tio n w h e n th e chip-select S and the
|
OCR Scan
|
PDF
|
44Tb203
DD10434
HC189
64-bit
0D1D315
|
HM 1211
Abstract: HN27C256FP HN27C256FP-25T HN27C256FP-30T A12U HM27C256FP Hitachi Scans-001 Hb203
Text: HITACHI/ LOGIC/ARRAYS/MEM 5DE D • 44Tb203 0014745 HN27C256FP Series- S T -% '1 3 -2 5 32768-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C256FP is a 32768-word by 8-bit one time electrically pro grammable ROM. Initially, all bits of the HN27C256FP are in the "1"
|
OCR Scan
|
PDF
|
4Tb203
OD14745
32768-word
HN27C256FP
40mW/MHz
110jtW
250ns
HN27C256FP-25T)
HM 1211
HN27C256FP-25T
HN27C256FP-30T
A12U
HM27C256FP
Hitachi Scans-001
Hb203
|
Untitled
Abstract: No abstract text available
Text: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the
|
OCR Scan
|
PDF
|
HN27C301P/FP
131072-word
HN27C301P
|
Untitled
Abstract: No abstract text available
Text: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30,1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word X 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers
|
OCR Scan
|
PDF
|
HM51W17805B
152-word
ADE-203-462B
28-pin
ns/70
|
Untitled
Abstract: No abstract text available
Text: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES
|
OCR Scan
|
PDF
|
G01341Q
4TLS03
0G13411
HD14070B
1407IB
HD14556B
HD14558B
HD14560B
HD14562B
HD14072B
|
Untitled
Abstract: No abstract text available
Text: HN624316 Series Preliminary 16M 1M x 16-bit and (2M x 8-bit) Mask ROM • DESCRIPTION T h e H ita c h i H N 6 2 4 3 1 6 is a 1 6 -M e g a b it C M O S M a sk Program m able Read O nly M em ory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The high density and high speed provide enough capacity and
|
OCR Scan
|
PDF
|
HN624316
16-bit)
16-bit
32-bit
42-pin
44-lead
48-lead
|
Untitled
Abstract: No abstract text available
Text: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing
|
OCR Scan
|
PDF
|
524288-word
ADE-203-750
HM62W8511H
512-kword
400-mil
36-pin
ns/12
ns/15
GD34GÃ
|
Untitled
Abstract: No abstract text available
Text: HN62444 Series 4M 256K X 16-bit and (512K x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62444 is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144x 16-bit and 524,288 x 8bit. The low power consumption of this device makes it ideal for
|
OCR Scan
|
PDF
|
HN62444
16-bit)
16-bit
40-pin
48-lead
HN62444
44-lead
|
A03404
Abstract: No abstract text available
Text: HM67S18258 Series 262,144-words x 18-bits Synchronous Fast Static RAM HITACHI ADE-203-661A Z Product Preview Rev. 1 Feb. 21 ,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write
|
OCR Scan
|
PDF
|
HM67S18258
144-words
18-bits
ADE-203-661A
M67S18258BP-7
BP-119)
67S18256BP
A03404
|
Untitled
Abstract: No abstract text available
Text: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin
|
OCR Scan
|
PDF
|
HB56T433D
304-word
32-bit
ADE-203Rev.
5117400BTS/BLTS)
72-pin
|
|
|
Untitled
Abstract: No abstract text available
Text: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write
|
OCR Scan
|
PDF
|
HM67S36130
072-words
36-bits
ADE-203-659A
HM67S36130BP-7
BP-119)
GG344f
HM67S36130ng
D34511
|
Untitled
Abstract: No abstract text available
Text: HM6207H Series 5.0 V Supply 262,144-word x 1-bit High Speed CMOS Static RAM co" ;fj|?, > > > > > > > > ^ • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ)
|
OCR Scan
|
PDF
|
HM6207H
144-word
24-pin
D024fllb
|
Untitled
Abstract: No abstract text available
Text: HN62W4116 Series 16M 1M x16-bit and (2M x 8-bit) Mask ROM • DESCRIPTION T he H ita ch i H N 6 2 W 4 1 1 6 is a 16 -M e g a bit C M O S M ask Program mable Read O nly M em ory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The H N 62W 4116 is capable of operating down to 3.0V, which
|
OCR Scan
|
PDF
|
HN62W4116
x16-bit)
16-bit
42-pin
44-lead
48-lead
Fa2W4116
624116L)
|
HM514170CLJ8
Abstract: HM514170CLJ-8 HM514170CJ7
Text: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM 51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 p.m CMOS process
|
OCR Scan
|
PDF
|
HM514170C
HM51S4170C
144-word
16-bit
4170C
16-bit.
4170C
HM514170CLJ8
HM514170CLJ-8
HM514170CJ7
|
HM514280AJ7
Abstract: HM514280AJ-7 hm514280
Text: blE I • m lb 203 0023114 535 ■ H IT S HM514280A/AL Series -HM51S4280A/AL Series 262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ The Hitachi HM514280A/AL are CMOS dynamic RA M o rg an ized as 2 6 2 ,1 4 4 -w o rd x 18-bit. HM 514280A/AL have realized higher density,
|
OCR Scan
|
PDF
|
HM514280A/AL
--------------HM51S4280A/AL
144-word
18-bit
18-bit.
14280A/AL
400mil
HM514280AJ7
HM514280AJ-7
hm514280
|
Untitled
Abstract: No abstract text available
Text: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635C Z Rev. 3.0 Feb. 21,1997 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and
|
OCR Scan
|
PDF
|
HM51W16160
HM51W18160
1048576-word
16-bit
ADE-203-635C
576-word
16-bit.
|
Untitled
Abstract: No abstract text available
Text: HM628128A Series 131,072-word X 8-bit High Speed CMOS Static RAM The Hitachi HM628128A is a CMOS static RAM organized 128 kword x 8 bit. It realizes higher density, higher perform ance and low pow er consum ption by em ploying 0.8 nm Hi-CMOS process technology.
|
OCR Scan
|
PDF
|
HM628128A
072-word
525-mil
460-mil
600-mil
|
Untitled
Abstract: No abstract text available
Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers
|
OCR Scan
|
PDF
|
HM5118160BI
1048576-word
16-bit
ADE-203-580A
5118160B
576-w
16-bit.
ns/70
ns/80
|
HM62W256LFP-7SLT
Abstract: No abstract text available
Text: 3.0 V & 3.3 V HM62W256 Seríes Supply 32,768-Word x 8-Bit Low Voltage Operation CMOS Static RAM Features Pin Description • Low voltage operation SRAM Single 3.3 V Supply • 0.8 j,m Hi-CMOS process • Highspeed Access time: 70/85 ns (max • Low power
|
OCR Scan
|
PDF
|
HM62W256
768-Word
HM62W256LFP-7T
HM62W256LFP-8T
HM62W256LFP-7SLT
|
Untitled
Abstract: No abstract text available
Text: HN62W428 Series 8M 512K x 16-bit and (1M x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62W 428 Series is an 8-M egabit CMOS Mask Program mable Read Only M em ory organized either as 524,288 x 16-bit or as 1,048,576 x 8-bit. The low voltage and low power consumption of this device
|
OCR Scan
|
PDF
|
HN62W428
16-bit)
HN62W
16-bit
42-pin
44-lead
|