BRIDGE RECTIFIER TOSHIBA 3B
Abstract: LT3748 LT4430ES6 mosfet 4430 Current-doubler 4430 transistor FG 5.5V 0.47F PA0785 LT4430 tapped inductor high voltage buck converter
Text: LT4430 Secondary-Side Opto-Coupler Driver FEATURES DESCRIPTION n The LT 4430 drives the opto-coupler that crosses the galvanic barrier in an isolated power supply. The IC contains a precision-trimmed reference, a high bandwidth error amplifier, an inverting gain of 6 stage to drive the optocoupler and unique overshoot control circuitry.
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LT4430
600mV
LTC3805/LTC3805-5
70KHz
700kHz)
MSOP-10E
DFN-10
LT3748
MSOP-16
LT3758
BRIDGE RECTIFIER TOSHIBA 3B
LT3748
LT4430ES6
mosfet 4430
Current-doubler
4430 transistor
FG 5.5V 0.47F
PA0785
LT4430
tapped inductor high voltage buck converter
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BRIDGE RECTIFIER TOSHIBA 3B
Abstract: Optocoupler 601 lt30 transistor sharp flyback schematic Ceramic Resistor 82K 5W 4430 4430 transistor flyback 200w LTC3723-2 Current-doubler rectifier
Text: LT4430 Secondary-Side Optocoupler Driver U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Startup and Short-Circuit Recovery
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LT4430
600mV
200kHz
LT3804
LTC3900
LTC3901
4430f
BRIDGE RECTIFIER TOSHIBA 3B
Optocoupler 601
lt30 transistor
sharp flyback schematic
Ceramic Resistor 82K 5W
4430
4430 transistor
flyback 200w
LTC3723-2
Current-doubler rectifier
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mosfet 4430
Abstract: schematic diagram 72v to 12v converter lt30 transistor flyback converter 12v to 18v linear opto coupler LT4430ES6 LTC3722-2 opto coupler 2kw full bridge converter design 4430 transistor
Text: LT4430 Secondary-Side Opto-Coupler Driver FEATURES n n n n n n n DESCRIPTION 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery High Bandwidth Error Amplifier Permits Simple Loop
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LT4430
600mV
200kHz
LT3804
LTC3900
LTC3901
4430fa
mosfet 4430
schematic diagram 72v to 12v converter
lt30 transistor
flyback converter 12v to 18v
linear opto coupler
LT4430ES6
LTC3722-2
opto coupler
2kw full bridge converter design
4430 transistor
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Untitled
Abstract: No abstract text available
Text: LT4430 Secondary-Side Opto-Coupler Driver Features Description 600mV Reference 1.25% Over Temperature n Wide Input Supply Range: 3V to 20V n Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery n High Bandwidth Error Amplifier Permits Simple Loop
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LT4430
600mV
LTC3805/LTC3805-5
70KHz
700kHz)
MSOP-10E
DFN-10
LT3748
MSOP-16
LT3798
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mosfet 4430
Abstract: No abstract text available
Text: LT4430 Secondary-Side Opto-Coupler Driver FEATURES n n n n n n n DESCRIPTION 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery High Bandwidth Error Amplifier Permits Simple Loop
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LT4430
600mV
LTC3805/LTC3805-5
70KHz
700kHz)
MSOP-10E
DFN-10
LT3748
MSOP-16
LT3758
mosfet 4430
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4430 mosfet
Abstract: mosfet 4430 ANPEC A102 APM4430 4430 8 pin ao 4430
Text: APM4430 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/23A , RDS ON =4.5mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 5 4 6 3 7 2 8 1 Reliable and Rugged SO-8 Package
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APM4430
0V/23A
4430 mosfet
mosfet 4430
ANPEC
A102
APM4430
4430 8 pin
ao 4430
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4435 mosfet
Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展
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APM70N03
APM3005/7/9N
APM2509/6/4N
MO-23/25/26/89,
SC-70
0V/20V,
30mohm
/55mohm~
APM2300A/2322/2324,
APM2310/2320/2306,
4435 mosfet
APM2014
4410 mosfet
MOSFET 4420
4435* mos
4435 sc
MOSFET 4435
9935 mosfet
ANPEC
APM2310
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Si7625DN
Abstract: mosfet 4430 si7625 S10-2503
Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7625DN
S10-2503-Rev.
01-Nov-10
mosfet 4430
si7625
S10-2503
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GE2761
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GE2761 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600/650V 1.0 10A Description The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low
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GE2761
600/650V
GE2761
O-220)
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AP2761P-A
Abstract: No abstract text available
Text: AP2761P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 650V RDS ON 1Ω ID 10A S Description
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AP2761P-A
O-220
O-220
100us
100ms
AP2761P-A
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Untitled
Abstract: No abstract text available
Text: AP2761P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant 650V RDS ON 1 ID 10A S Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC
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AP2761P-A
O-220
O-220
100us
100ms
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mosfet 10a 600v
Abstract: P channel MOSFET 10A 330v ssm2761pa
Text: SSM2761P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D Lower On-resistance Fast Switching Characteristic Simple Drive Requirement RoHS Compliant G BVDSS 650V RDS ON 1Ω ID 10A S DESCRIPTION The TO-220 package is universally preferred for all commercialindustrial applications.
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SSM2761P-A
O-220
O-220
mosfet 10a 600v
P channel MOSFET 10A 330v
ssm2761pa
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Untitled
Abstract: No abstract text available
Text: AP2761R-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant 650V RDS ON 1 ID 10A S Description AP2761 series are specially designed as main switching devices for
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AP2761R-A
AP2761
265VAC
O-262
100us
100ms
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AP2761R-A
Abstract: AP2761
Text: AP2761R-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 650V RDS ON 1Ω ID 10A S Description
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AP2761R-A
AP2761
265VAC
O-262
100us
100ms
AP2761R-A
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Untitled
Abstract: No abstract text available
Text: AP2761S-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G RoHS Compliant & Halogen-Free 650V RDS ON 1 ID 10A S Description
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AP2761S-A-HF
AP2761S
265VAC
O-263
100us
100ms
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ap2761
Abstract: No abstract text available
Text: AP2761S-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G BVDSS 650V RDS ON 1Ω ID
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AP2761S-A-HF
AP2761S
265VAC
O-263
100us
100ms
ap2761
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA483DJ www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA483DJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7625DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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035H
Abstract: AN1001 IRFPE30 mosfet 20A 500V
Text: PD- 94853 IRFP460APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFP460APbF
AN1001)
O-247AC
IRFPE30
035H
AN1001
IRFPE30
mosfet 20A 500V
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mosfet 4430
Abstract: Diode 400V 20A 035H IRFPE30 igbt 400V 20A irfp460a 4430 mosfet
Text: IRFP460APbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
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IRFP460APbF
specifO-247AC
IRFPE30
mosfet 4430
Diode 400V 20A
035H
IRFPE30
igbt 400V 20A
irfp460a
4430 mosfet
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035H
Abstract: AN1001 IRFPE30 MJ2400 Power MOSFET 50V 20A
Text: PD- 94853 IRFP460APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFP460APbF
AN1001)
O-247AC
035H
AN1001
IRFPE30
MJ2400
Power MOSFET 50V 20A
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irfp460a
Abstract: IRFP460APBF SiHFP460A
Text: IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRFP460A,
SiHFP460A
2002/95/EC
O-247
18-Jul-08
irfp460a
IRFP460APBF
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Untitled
Abstract: No abstract text available
Text: PD‘91880 International I R Rectifier IRFP460A smpsmosfet HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V d ss 500V R d s (o n ) m a x 0.27£2 Id 20A Benefits • Low Gate Charge Qg results in Simple
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IRFP460A
AN1001)
Cu310)
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mosfet 4430
Abstract: FF121R 4431 mosfet
Text: 23 HARRIS IRFF12 0 /1 2 1/12 2/123 IRFF120R/121 R /122R/123R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 0 5 A F • 5.0A and 6.0A , 8 0 V - 1 0 0V • rDS on = 0.30S1 and 0 .4 0 ii • Single Pulse Avalanche Energy R ated*
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IRFF12
IRFF120R/121
/122R/123R
IRFF120,
IRFF121,
IRFF122,
IRFF123
IRFF120R,
IRFF121R,
IRFF122R,
mosfet 4430
FF121R
4431 mosfet
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