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    43P TRANSISTOR Search Results

    43P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    43P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4139 temperature

    Abstract: RN5RF RN5RF30A RN5RF50A 75W PNP
    Text: /2:#5,33/ #92/7$*( 5(*8/$725#:,7+#(;7(51$/ 75$16,6725 5185 #6(5,(6 $33/,&$7,21#0$18$/ NO. EA-043-0006 LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR 5185)#6(5,(6 OUTLINE /


    Original     		PDF EA-043-0006 RN5RF30A 4139 temperature RN5RF RN5RF30A RN5RF50A 75W PNP

    transistor 131-6

    Abstract: 4139 temperature TRANSISTOR K 314 p945
    Text: /'2#5HJXODWRUV#ZLWK#D#:DWFKGRJ 7LPHU 584359#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-072-0006 LDO Regulators with a Watchdog Timer 584359#6(5,(6 OUTLINE ,# ,&V# ZLWK# KLJK# DFFXUDF\# RXWSXW#YROWDJH


    Original     		PDF EA-072-0006 transistor 131-6 4139 temperature TRANSISTOR K 314 p945

    zo102

    Abstract: MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13
    Text: Simulating Class C RF Amplifiers SPICE can be a versatile tool for RF work as long a few simple precautions are taken. Significant parasitics must be included in the circuit description, models of active devices must be represented using subcircuits, and selection of transient analysis options must be considered. The transient options include


    Original     		PDF 870MegHz zo102 MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13

    IBM POWER3 processor

    Abstract: 76H0518 ibm RS/6000 POWER 1 pcI diagnostic card codes circuit diagram for scsi to usb G221-7126-01 GXT300P SA38-0559 SA38-0561 MOTOROLA 68307
    Text: RS/6000 7044 Model 170 Technical Overview and Introduction February 24, 2000 Volker Haug Jeanine Indest Scott Vetter International Technical Support Organization Austin, TX IBM Copyright IBM Corp. 2000 RS/6000 7044 Model 170 Technical Overview RS/6000 7044 Model 170 Technical Overview


    Original     		PDF RS/6000 64-bit IBM POWER3 processor 76H0518 ibm RS/6000 POWER 1 pcI diagnostic card codes circuit diagram for scsi to usb G221-7126-01 GXT300P SA38-0559 SA38-0561 MOTOROLA 68307

    WPLSoft user manual

    Abstract: VFD015E43T VFD007E21T VFD007E43T submersible motor winding formula VFD004E21T VFD015E43A manual VFD007E21A delta vfd-e with modbus communication vfd037e43a
    Text: Preface Thank you for choosing DELTA’s high-performance VFD-E Series. The VFD-E Series is manufactured with high-quality components and materials and incorporate the latest microprocessor technology available. This manual is to be used for the installation, parameter setting, troubleshooting, and daily


    Original     		PDF 14/CTL X0XX1111 X0XX0000 X0XX1000 X1XX0000 0XXXX110 0XXXX01X X01X0001 0XXXX111 WPLSoft user manual VFD015E43T VFD007E21T VFD007E43T submersible motor winding formula VFD004E21T VFD015E43A manual VFD007E21A delta vfd-e with modbus communication vfd037e43a

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    potenciometro 100k lineal

    Abstract: Linear Potentiometer 50k transformador chopper descargar vfd037e43a VFD015E43T VFD037E23A VFD075E43A como se mide un diodo transistor de induccion estatica
    Text: Prefacio Gracias por elegir la Serie de alto rendimiento VFD-E de DELTA. La Serie VFD-E se fabrica con componentes y materiales de alta calidad e incorpora la más moderna tecnología disponible en microprocesadores. Se debe usar este manual para instalación, ajuste de parámetros, solución de problemas y


    Original     		PDF 10/CTL X0XX1111 X0XX0000 X0XX1000 X1XX0000 0XXXX110 0XXXX01X X01X0001 0XXXX111 potenciometro 100k lineal Linear Potentiometer 50k transformador chopper descargar vfd037e43a VFD015E43T VFD037E23A VFD075E43A como se mide un diodo transistor de induccion estatica

    VVQ4000-50B-C8

    Abstract: SMC - SY5120 SY3120-5LOU-C6-Q jst connector JST p-2 58A03 SY3140-5LOU-Q SY5120-L-C6 DIN43650C 664AB JISC0704
    Text: CAT.EUS11-83 B -UK 5 Port Solenoid Valve Power Consumption With Power Saving Circuit SY Series Improved pilot valve Pilot valve cover is stronger using stainless steel. Mounting thread is also reinforced from size M1.7 to M2.  Flow Characteristics Series


    Original     		PDF EUS11-83 SY3000 SY5000 SY7000 SY9000 G15-10-01) ARBY3000 ARBY3000-05--2 VVQ4000-50B-C8 SMC - SY5120 SY3120-5LOU-C6-Q jst connector JST p-2 58A03 SY3140-5LOU-Q SY5120-L-C6 DIN43650C 664AB JISC0704

    ERIE CAPACITORS TYPE K

    Abstract: No abstract text available
    Text: Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor


    Original     		PDF MC13156 MC13156 HP3780A HP8640B MC13156DW ERIE CAPACITORS TYPE K

    SMD Transistor msb

    Abstract: TCXO KSS 6 pin TRANSISTOR SMD CODE XI DJ speaker system circuit diagram M64886 kss japan tcxo pin configuration 1K variable resistor str 1195 variable resistor 10k connection LQFP80-P-1212-0
    Text: M64886FP RF Transceiver for Short-range Wireless REJ03F0087-0100Z Rev.1.0 Sep.22.2003 Description The M64886FP is a semiconductor integrated circuit designed for RF / IF / AF transceiver function with Dual PLL synthesizer for double conversion system cordless phone which used by 2.4 GHz and 900MHz ISM band of North


    Original     		PDF M64886FP REJ03F0087-0100Z M64886FP 900MHz SMD Transistor msb TCXO KSS 6 pin TRANSISTOR SMD CODE XI DJ speaker system circuit diagram M64886 kss japan tcxo pin configuration 1K variable resistor str 1195 variable resistor 10k connection LQFP80-P-1212-0

    PTC THERMISTOR TDK

    Abstract: inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206
    Text: AND8470/D A 25 to 55 V, 0.7 to 1.5 A, Single Stage Power Factor Corrected Constant Current Offline LED Driver with Flexible Dimming Options Prepared by: Frank Cathell APPLICATION NOTE ON Semiconductor Introduction energy savings without compromising safety and


    Original     		PDF AND8470/D PTC THERMISTOR TDK inductor 220 mh 4148 vishay smd WE-MIDCOM NCL30001 LM324DG SMD resistor royal ohm PTC THERMISTOR PHILIPS PTC 250 Ohm - 25 - 25 V C3216COG1H TDK PTC 1206

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP power transistor BDP32 FEATURES • S O T223 package. DESCRIPTION P N P p o w e r tra n s is to r in a plastic S O T 2 2 3 p a c k a g e fo r ge n e ra l p u rp o s e , m e d iu m p o w e r a p p lic a tio n s .


    OCR Scan     		PDF BDP32 OT223

    Tektronix 7603

    Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
    Text: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO


    OCR Scan     		PDF CB-19 Tektronix 7603 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9110R4 JANSR2N7411 -100V, MIL-STD-750, MIL-S-19500, 500ms;

    TO-254AA Package

    Abstract: FSF9150R4
    Text: JANSR2N7403 ffî MASSES Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Description Features • 22A, -100V, rDS 0 N = 0.140£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSF9150R4 JANSR2N7403 -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; TO-254AA Package FSF9150R4

    40842

    Abstract: No abstract text available
    Text: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9230D, -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms; 40842

    Untitled

    Abstract: No abstract text available
    Text: ffî MARE«! FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A, 60V, rDS ON = 0.020£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSF055D, FSF055R 36MeV/mg/cmz MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    HC165A

    Abstract: TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A
    Text: MOS Industrial ICs AD Converter - je Conversion Resolution Time Type No. Conversion Mode Input Channel TC5090AP 8b it 2ms Integration method 1 TC5091AP Bbit 2ms " 6 TC5092AP 13bit 8.2ms ’ 8 TC5093AP 8b it 50ps Successive approximation 8 Output Formst


    OCR Scan     		PDF TC5090AP TC5091AP TC5092AP TC5093AP TC35094P TC35095AP/AF TC35096AP/AF TC35097AP TC35098AP TC35080P HC165A TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A

    Untitled

    Abstract: No abstract text available
    Text: a h a r r is S E M I C O N D U C T O R FSF254D, FSF254R " J " m * • ■ Radiation Hardened, SE G R Resistant N-Channel Power M OSFETs june 1997 F e a tu re s Package • 18A, 250V, rDS ON = 0.170i2 • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si)


    OCR Scan     		PDF FSF254D, FSF254R O-254AA 170i2 100kRAD 36MeV/mg/cm2 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSJ264D, FSJ264R 1-800-4-HARRIS

    DUAL CONVERSION NARROWBAND FM RECEIVERS

    Abstract: KT 315 a
    Text: Order this data sheet by MC13135/D MOTOROLA MC13135 MC13136 SEMICONDUCTOR! TECHNICAL DATA Advance Information FM Communications Receivers DUAL CONVERSION NARROWBAND FM RECEIVERS The MC13135/MC13136 are the second generation of single chip, dual conversion FM communications receivers developed by Motorola. Major


    OCR Scan     		PDF MC13135/D MC13135 MC13136 MC13135/MC13136 MC13136 1PHX33367-1 DUAL CONVERSION NARROWBAND FM RECEIVERS KT 315 a