420 TRANSISTOR Search Results

420 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

420 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
bob smith termination POE Abstract: SLVU301 B1100 DIODE ETH1-230LD HPA420 panasonic ce series Capacitor 100V ETH1-230L TP10 TPS23754 coilcraft and bob smith termination Text: User's Guide SLVU301 – April 2009 TPS23754EVM-420 EVM: Evaluation Module for TPS23754 This User’s Guide describes the TPS23754 EVM TPS23754EVM-420 . TPS23754EVM-420 contains evaluation and reference circuitry for the TPS23754. The TPS23754 is an IEEE 802.3at compliant	Original	PDF	SLVU301 TPS23754EVM-420 TPS23754 TPS23754 TPS23754EVM-420) TPS23754. bob smith termination POE SLVU301 B1100 DIODE ETH1-230LD HPA420 panasonic ce series Capacitor 100V ETH1-230L TP10 coilcraft and bob smith termination
BF422 Abstract: BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 Text: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531	Original	PDF	Q62702-F531 Q62702-F495 BF422 BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531
SOT23 Abstract: SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23 Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BC850C SOT23 45 100 250 420 800 100 BC860C 324 BC850CW SOT323 45 100 200 420 800 100	Original	PDF	BC850C BC860C BC850CW OT323 BC860CW BC850W BC860W BCF32 BCF29 SOT23 SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23
F495 Abstract: BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422 Text: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531	Original	PDF	Q62702-F531 Q62702-F495 F495 BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422
420 NPN Silicon RF Transistor Abstract: No abstract text available Text: e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	Original	PDF	1-877-GOLDMOS 1301-PTB 420 NPN Silicon RF Transistor
100n capacitor tantalum Abstract: 120NQ045 CL10 SG1524B TAJA106K016R TPSD107K010R0050 TPSD336K025R0200 TPSV108K004R0035 electronic design Text: TANTALUM AND NIOBIUM OXIDE CAPACITORS EQUIVALENT CIRCUIT MODEL APPLICABILITY TO SIMULATION SOFTWARE J. Pelcak AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 127 Fax: +420 465 358 128, email [email protected] ABSTRACT	Original	PDF	NOJC686K006R 120NQ045 TAJA106K016R GOJD337K004R 100n capacitor tantalum 120NQ045 CL10 SG1524B TAJA106K016R TPSD107K010R0050 TPSD336K025R0200 TPSV108K004R0035 electronic design
Mn2O3 Abstract: AVX solid tantalum capacitor SMD Transistor 7er tantalum capacitors surge current Text: VOLTAGE DERATING RULES FOR SOLID TANTALUM AND NIOBIUM CAPACITORS T. Zednicek AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 email [email protected] J.Gill AVX Limited, Long Road, Paignton	Original	PDF
Equivalent Circuit Model for Tantalum and Niobium Oxide Capacitors for use in Simulation Software Abstract: 120NQ045 SG1524B TPSV108K004R0035 100n capacitor tantalum Text: EQUIVALENT CIRCUIT MODEL FOR TANTALUM AND NIOBIUM OXIDE CAPACITORS FOR USE IN SIMULATION SOFTWARE J. Pelcak AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 127 Fax: +420 465 358 128, email [email protected] ABSTRACT	Original	PDF
20031 Abstract: 9434 Text: e PTB 20031 40 Watts, 420–470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP	Original	PDF	1-877-GOLDMOS 1301-PTB 20031 9434
Voltage Derating Rules for Solid Tantalum and Niobium Capacitors Abstract: No abstract text available Text: Voltage Derating Rules for Solid Tantalum and Niobium Capacitors Tomáš Zedníček AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 e-mail: [email protected] John Gill AVX Limited, Long Road, Paignton	Original	PDF
Untitled Abstract: No abstract text available Text: DGN−8 THS3001 D−8 www.ti.com SLOS217F – JULY 1998 – REVISED JUNE 2007 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate	Original	PDF	THS3001 SLOS217F 420-MHz 40-ns
THS3001 Abstract: THS3001CD THS3001CDR THS3001ID THS6012 THS6022 9551M Text: DGN−8 THS3001 D−8 www.ti.com SLOS217D – JULY 1998 – REVISED OCTOBER 2004 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate	Original	PDF	THS3001 SLOS217D 420-MHz 40-ns THS3001 THS3001CD THS3001CDR THS3001ID THS6012 THS6022 9551M
Untitled Abstract: No abstract text available Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate	Original	PDF	THS3001 SLOS217E 420-MHz 40-ns THS3001
THS3001 Abstract: THS3001CD THS3001CDR THS6012 THS6022 Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate	Original	PDF	THS3001 SLOS217E 420-MHz 40-ns THS3001 THS3001CD THS3001CDR THS6012 THS6022

Untitled Abstract: No abstract text available Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate	Original	PDF	THS3001 SLOS217E 420-MHz 40-ns THS3001
Untitled Abstract: No abstract text available Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate	Original	PDF	THS3001 SLOS217E 420-MHz 40-ns THS3001
THS3001 Abstract: THS3001CD THS3001CDR THS6012 THS6022 Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate	Original	PDF	THS3001 SLOS217E 420-MHz 40-ns THS3001 THS3001CD THS3001CDR THS6012 THS6022
BT3904 Abstract: BC850B2 Text: NPN Transistors NPN S ilicon T ransisto rs TO-236 Plastic Package Type Marking Code V ceo hFE Volts 100-250 160-400 250-600 100-250 160-400 250-600 110-220 200-450 110-220 200-450 420-800 110-220 200-450 420-800 200-450 420-800 200-450 420-800 fr I ces VcEsat	OCR Scan	PDF	O-236 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BT3904 BC850B2
BF 422 Abstract: No abstract text available Text: SIEMENS NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 421, BF 423 PNP Type Marking BF 420 B F 422 Ordering Code Pin Co nfigural ion	OCR Scan	PDF	Q62702-F531 Q62702-F495 mA102 fiS35b05 D151t BF 422
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor D escription The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20031 40 Watts, 420-470 MHz UHF TV Power Transistor D e s c rip tio n The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and	OCR Scan	PDF
20031 Abstract: No abstract text available Text: ERICSSON ^ PTB 20031 40 Watts, 420-470 MHz UHF TV Power Transistor D escription The 20031 is a class AB, NPN, common emitter R F power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and P E P	OCR Scan	PDF
ths30011 Abstract: No abstract text available Text: THS3001 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER SLOS217 —JULY 1998 High Speed - 420 MHz Bandwidth G = 1, - 3 dB - 6500 V/^s Slew Rate - 40-ns Settling Time (0.1%) applications Scanning and Imaging Systems IF and RF Amplification High Output Drive, Iq = 100 mA	OCR Scan	PDF	THS3001 420-MHz SLOS217 40-ns ths30011

420 TRANSISTOR Search Results

420 TRANSISTOR Result Highlights (5)

420 TRANSISTOR Datasheets Context Search

bob smith termination POE

BF422

SOT23

F495

420 NPN Silicon RF Transistor

100n capacitor tantalum

Mn2O3

Equivalent Circuit Model for Tantalum and Niobium Oxide Capacitors for use in Simulation Software

20031

Voltage Derating Rules for Solid Tantalum and Niobium Capacitors

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THS3001

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THS3001

Untitled

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THS3001

BT3904

BF 422

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Untitled

Untitled

20031

ths30011