FMMT491ATA
Abstract: fmmt491A 41A MARKING SOT23
Text: A Product Line of Diodes Incorporated FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current
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FMMT491A
500mW
AEC-Q101
J-STD-020
DS33092
FMMT491ATA
fmmt491A
41A MARKING SOT23
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100mA-1A
Abstract: FMMT591A npn 41A FMMT491A DSA003696 1A-10A
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A FMMT491A ISSUE 3 OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A TYPICAL CHARACTERISTICS 0.5 0.5 +25°C 0.4 -55° C +25° C +100° C 0.3 I+/I*=10 I+/I*=50 I+/I*=100
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FMMT491A
100mA
100ms
100us
FMMT591A
500mA,
100MHz
100mA-1A
FMMT591A
npn 41A
FMMT491A
DSA003696
1A-10A
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Medium Power Transistor FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1
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FMMT491A
OT-23
500mA
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1
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FMMT491A
OT-23
500mA
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A ISSUE 3 OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A E C COMPLEMENTARY TYPE PARTMARKING DETAIL I+/I*=10 -55° C +25° C +100° C I+/I*=10 I+/I*=50 I+/I*=100
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FMMT491A
FMMT591A
100mA
100ms
100us
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Untitled
Abstract: No abstract text available
Text: SLF431ASF Semiconductor Programmable Voltage Reference Features • Programmable output voltage to 36 volts • Sink current capability of 1.0mA to 100mA • Low dynamic impedance 0.15Ω typical • Temperature compensated for operation over full rated operating temperature
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SLF431ASF
100mA
50ppm/Â
SLF431AF
OT-23F
0mA-100mA
KSI-2035-000
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and
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UT4101
UT4101
UT4101L-AE2-R
UT4101G-AE2-R
UT4101L-AE3-R
UT4101G-AE3-R
OT-23-3
OT-23
QW-R502-164
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UT4101
Abstract: is24
Text: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and
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UT4101
UT4101
UT4101L-AE3-R
UT4101G-AE3-R
OT-23
QW-R502-164
is24
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT4101 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and
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UT4101
UT4101
UT4101L-AE2-R
UT4101G-AE2-R
UT4101L-AE3-R
UT4101G-AE3-R
OT-23-3
OT-23
QW-R502-164
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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Gfk 81a
Abstract: LT 543 common cathode Gfp 81a MMBZ15ALT1 MZ4623 SOT23 MOS MARKING KE gfk 47a mzp a 001 96 16 MMBZ20ALT1 1N5994B
Text: TVS/Zeners Transient Voltage Suppressors Zener Regulator and Reference Diodes In Brief . . . Motorola’s standard TVS Transient Voltage Suppressors and Zener diodes comprise the largest inventoried line in the industry. Continuous development of improved manufacturing
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1N5283
1N5287
1N5297
1N5298
1N5305
1N5309
1N5310
1N5311
1N5312
1N5313
Gfk 81a
LT 543 common cathode
Gfp 81a
MMBZ15ALT1
MZ4623
SOT23 MOS MARKING KE
gfk 47a
mzp a 001 96 16
MMBZ20ALT1
1N5994B
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O2MICRO
Abstract: OZ811LN oz811 275V 0.1uF Capacitor oz811l IHLP5050FDER0R47M01 2N7002 BSC022N03S BSC119N03S MBR0540
Text: OZ811 Ultra High Efficiency DC-DC Controller FEATURES • • • • • • • • • • • • • • • • GENERAL DESCRIPTION DC-DC SMPS controller with integrated drivers Constant ripple-current control allows optimum inductor size High Efficiency up to 94%
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OZ811
100mA)
OZ811-SF-1
O2MICRO
OZ811LN
oz811
275V 0.1uF Capacitor
oz811l
IHLP5050FDER0R47M01
2N7002
BSC022N03S
BSC119N03S
MBR0540
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amd athlon 5600
Abstract: HIP6601 dip Circuit diagram of 12v 10w LED driver berg 68000-236 JOLO SPCJ-123-01 HIP6302 HIP6302CB ATX MOTHERBOARD schematic Socket 478 C13-C17 amd athlon PIN LAYOUT
Text: HIP6302EVAL1 - Multiphase Power Conversion for AMD Athlon Processors up to 35A TM Application Note February 2002 AN9888.1 Author: Matt Harris Introduction Each generation of computer microprocessor brings performance advances in computing power. Performance
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HIP6302EVAL1
AN9888
amd athlon 5600
HIP6601 dip
Circuit diagram of 12v 10w LED driver
berg 68000-236
JOLO SPCJ-123-01
HIP6302
HIP6302CB
ATX MOTHERBOARD schematic Socket 478
C13-C17
amd athlon PIN LAYOUT
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 3 - OCTOBER 1995 FEATURES * Very Low Equivalent Résistance, RCE lat 195mQ at 1A CO M PLEM EN TA RY TYPE PARTMARKING D E T A IL - FM MT591A 41A ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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OCR Scan
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195mQ
MT591A
tr250C
500mA,
100MHz
width-300
FMMT491A
clc17DS7Ã
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PDF
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MT591A
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR FMM T491A IS S U E 3 -O C T O B E R 1995 FEATURES * Very Low Equivalent Resistance, RCEisat 195mft at 1A C O M P L E M E N T A R Y TY PE - FM M T591A P A R T M A R K IN G D E T A IL - 41A ABSOLUTE M A X IM U M RATINGS.
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OCR Scan
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195mft
T491A
T591A
500mA,
50rnA,
100MHz
300ns.
FMMT491A
MT591A
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1RLML2402
Abstract: RLML2402 MARKING CODE PARI SOT23 MARKING tAN SOT-23 diode IRLML2402 rasistor 1RLML mosfet marking code AL sot-23 marking bad sot-23 076A
Text: 567- öt-b P D - 9.1257 International H I Rectifier IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching Voss = 20V R DS(on) =
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OCR Scan
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1RLML2402
OT-23
OT-23
Liguria49
3-30-i
1RLML2402
RLML2402
MARKING CODE PARI SOT23
MARKING tAN SOT-23 diode
IRLML2402
rasistor
1RLML
mosfet marking code AL sot-23
marking bad sot-23
076A
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44641B
Abstract: A43004
Text: Afacm m an A M P com pany Step Recovery Diodes MA43000, MA44600, MA44700 Series V 2.00 Features • Low Transition Times • Tight C apacitance Ranges • High Voltage and Low Therm al Resistance for H igher Input Pow er • Surface M ount Package Available SOT-23
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OCR Scan
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OT-23)
MA43000,
MA44600,
MA44700
MA44600
OT-23
MA43000
MIL-S19500,
MIL-STD-202
44641B
A43004
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PDF
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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OCR Scan
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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PDF
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Teledyne F-13
Abstract: NRF 211 teledyne U series
Text: TELEDYNE COMPONENTS 2ÖE D H öT17tiDS Q O Ü b4 G3 3 JÊÊ S D 1 1 0 0 , S D Ì 101 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION SDtlOOCHP — SD1100DD SD1100HD 450V, 35 ohm Sorted Chips In Conductive Waffle Pack
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OCR Scan
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T17tiDS
TQ-226AA
O-206AA
O-20SAF
SD1100DD
SD1100HD
SD1101CHP
SD1101DD
SD1101HD
VP0540
Teledyne F-13
NRF 211
teledyne U series
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PDF
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1N6095
Abstract: No abstract text available
Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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OCR Scan
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1N6095
1N6096
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PDF
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3148b
Abstract: No abstract text available
Text: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
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OCR Scan
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MBR3520
MBR3535
MBR3545
MBR3545
3148b
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PDF
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12v dc full wave bridge rectifier
Abstract: 5000 watt full bridge design 1N5S34
Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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OCR Scan
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1N5832
1N5834
1N5S34
12v dc full wave bridge rectifier
5000 watt full bridge design
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PDF
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DIODE SD51
Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Text: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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OCR Scan
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150-C
1N6097
1N6098
DIODE SD51
5817 SOD-123
bly 83
Motorola Switchmode
SD51
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PDF
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1N5825
Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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OCR Scan
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1N5823
1N5824
1N5825
1N5825
diode 1N5825
N5824
1n6823
marking Bq sot23
1N5824 ON
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