414 TRANSISTOR Search Results

414 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

414 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor BF 414 Abstract: 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414 Text: BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage	Original	PDF	Q62702-F517 transistor BF 414 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414
Frequency Input Abstract: No abstract text available Text: Batch Controller Model 414 Features y Dual relay outputs y Overrun compensation y Remote start/stop y No-signal alarm y Ticket printing with time and date y Displays batch total, preset quantity, flow rate, and accumulated total Overview The 414 Batch Controller is suited to	Original	PDF	20-240V 10-120V 2-28V RS232/422 DS-25/06/14 Frequency Input
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KRC410, 411, 414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 4 1/4	Original	PDF	KRC410,
15Y SMD TRANSISTOR Abstract: SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL Text: SUMER 13555 BISHOP'S COURT BROOKFIELD, WI. 53005 414/784-6641 ~""-"- IPMI SSM AUDIO PRODUCTS AUDIO HANDBOOK VOLUMEl TABLE OF CONTENTS Precision Monolithics Inc. Introduction . 4	Original	PDF	SSM-2013 15Y SMD TRANSISTOR SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL
5006 OPTICAL Abstract: No abstract text available Text: User's Guide SLVU279 – December 2008 TPS54617EVM-414 6-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3	Original	PDF	SLVU279 TPS54617EVM-414 5006 OPTICAL
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KRC410, 411, 414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B M M ・With Built-in Bias Resistors. ・Simplify Circuit Design. D J A 2 G ・Reduce a Quantity of Parts and Manufacturing Process.	Original	PDF	KRC410, KRC414
TRANSISTOR BC 413 Abstract: BC414C BC413C bc 357 transistor pin details BC413B BC413 bc 357 transistor BC414B BC414 Transistor BC413C Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC 414, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	PDF	BC414 C-120 Rev160701 TRANSISTOR BC 413 BC414C BC413C bc 357 transistor pin details BC413B BC413 bc 357 transistor BC414B BC414 Transistor BC413C
Untitled Abstract: No abstract text available Text: P048F048T12AL P048F048M12AL PRMTM Regulator • 48 V input V•I ChipTM PRM • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 414 W/in3 • 1.45 MHz switching frequency • Small footprint – 110 W/in2	Original	PDF	P048F048T12AL P048F048M12AL
Untitled Abstract: No abstract text available Text: P048F048T12AL P048F048M12AL PRMTM Regulator • 48 V input V•I ChipTM PRM • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 414 W/in3 • 1.45 MHz switching frequency • Small footprint – 110 W/in2	Original	PDF	P048F048T12AL P048F048M12AL P048F048T12AL
TOP414G Abstract: TOPSWITCH buck TOP412 self oscillating flyback converter circuit 7474 ic pin configuration TOP414 TOPSWITCH EF20 MBRD620CT MURS120T3 Text: TOP412/414 ® TOPSwitch Family Three-terminal DC to DC PWM Switch Product Highlights Low Cost Replacement for Discrete Switchers • Up to 15 fewer components - cuts cost, increases reliability • Allows for a smaller and lighter solution under 12 mm height, all surface mount components	Original	PDF	OP412/414 OP414 PI-2371-120198 TOP414G TOPSWITCH buck TOP412 self oscillating flyback converter circuit 7474 ic pin configuration TOP414 TOPSWITCH EF20 MBRD620CT MURS120T3
PI-2216-120198 Abstract: TOP414G TOP414 top412g PI-2216 topswitch TOP412 TOPSWITCH buck dpak DIODE 7474 ic pin configuration Text: TOP412/414 TOPSwitch ® Family Three-terminal DC to DC PWM Switch Product Highlights Low Cost Replacement for Discrete Switchers • Up to 15 fewer components - cuts cost, increases reliability • Allows for a smaller and lighter solution under 12 mm height, all surface mount components	Original	PDF	OP412/414 OP414 PI-2371-120198 PI-2216-120198 TOP414G TOP414 top412g PI-2216 topswitch TOP412 TOPSWITCH buck dpak DIODE 7474 ic pin configuration
transistor BF 414 Abstract: No abstract text available Text: SIEMENS NPN Silicon RF Transistor BF 414 • For low-noise, common base VH F and FM stages Type Marking Ordering Code BF 414 - Q62702-F517 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage	OCR Scan	PDF	Q62702-F517 transistor BF 414
WLFT 404 Abstract: L203 WLFT 405 Text: Thermally conductive foil both sides adhesive - good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request art. WLFT 404 WLFT 404 WLFT 404 WLFT 404 WLFT 414 WLFT 414 no. R25 R50 R100 R200 R25	OCR Scan	PDF	100x100 100x200 200x200 100x200 WLFT 404 L203 WLFT 405
Untitled Abstract: No abstract text available Text: SANKEN ELECTRIC CO LTD SSE » Lrl I; 7*^0741 QG01G11 414 H S A K J Silicon NPN Triple Diffused Planar ☆ H ig h Voltage Switching Transistor 2SC4518A Application Exwnpla : Switching Regulator,Lighting Inverter, and General Purpose Electrical Characteristics	OCR Scan	PDF	QG01G11 2SC4518A 2SC4518 550min 10Omax MT-25 T0220)

Untitled Abstract: No abstract text available Text: 7 ^ - 3 / F 6 - 25 R 12 KF EUPEC SEE T> Transistor Transistor 34032=17 0000273 414 « U P E C Thermische Eigenschaften *thjc Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W	OCR Scan	PDF
TRANSISTOR BC 413 Abstract: TFK 101 TFK 902 transistor bc 102 TFK 413 BC413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 TFK 102 Text: BC 413 - BC 414 Silizium-NPN-Epitaxial -Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharm e Vorstufen Applications: Low noise pre stages Besondere Merkmale: Features: • Rauschmaß < 3 dB • Noise figure < 3 d B • In Gruppen so rtie rt	OCR Scan	PDF
1BW TRANSISTOR Abstract: transistor bw 51 transistor 1BW 25 Text: 7 ^ -3 / F 6 - 25 R12 KF EUPEC SEE Transistor T> Transistor 34032=17 0 000 273 Thermische Eigenschaften *thjc Elektrische Eigenschaften 414 « U P E C Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W	OCR Scan	PDF	D0D0273 34D32CI7 1BW TRANSISTOR transistor bw 51 transistor 1BW 25
ELTEC INSTRUMENTS Abstract: No abstract text available Text: 414 Series Opposed Dual Pyroelectric IR Detector with Source Follower E LH T E C Manufactured under one or more of the following US patents 3,839.640 - 4.218,620 - 4.326,663 - 4,384207 - 4,437,003 4,441,023 - 4.523,095 .040 SPACING r T 1.0 ELEMENT T.O080	OCR Scan	PDF	1000jxm ELTEC INSTRUMENTS
BC413 Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c Text: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP	OCR Scan	PDF	A53Sba5 D041S64 VPTO52I2 Q62702-C375 Q62702-C375-V1 Q62702-C375-V2 Q62702-C376 Q62702-C376-V1 Q62702-C376-V2 35Li05 BC413 AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
BF414 Abstract: transistor BF 414 414 transistor BF 414 marking code B1C TRANSISTOR MARKING CODE "SP" K 414 transistor Text: TELEFUNKEN ELECTRONIC Û1 C D • ô'tëO D 'Jt. 0 0 Q5 2 G4 fi 7 BF 414 M electronic TO Creative Technologies Silicon PNP Epitaxial Planar RF Transistor Applications: VHF input stages in common base configuration Features: • Small feedback capacitance • Large signal to intermodulation ratio	OCR Scan	PDF
bc 471 Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN Text: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN	OCR Scan	PDF	fi23SbGS Q62702-C377 Q62702-C377-V1 Q62702-C377-V2 Q62702-C377-V3 Q62702-C378 Q62702-C378-V1 Q62702-C378-V2 Q62702-C378-V3 fl535b05 bc 471 IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
bc 945 Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135 Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549	OCR Scan	PDF	O-92-GehÃ BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
2N6517 npn Abstract: 2N6515 2N6517 Text: SAMSUNG SEMICONDUCTOR INC 2N6517 D J 7^414-2 QOOTII? 3 \| NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • C o llecto r-E m itter Voltage: Vcto=350V • C o lle cto r D issipation: P c m*x =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	PDF	2N6517 625mW T-29-21 2N6515 100mA, 20MHz 300fjs, 2N6517 npn
230Z Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111 Text: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB	OCR Scan	PDF	h427414 T-33-T- NEL2300 Emitterj17 bHS7414 V3301 -r-33 NEL230353 230Z V3301 NEL230253 L230C NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111

414 TRANSISTOR Search Results

414 TRANSISTOR Result Highlights (5)

414 TRANSISTOR Datasheets Context Search

transistor BF 414

Frequency Input

Untitled

15Y SMD TRANSISTOR

5006 OPTICAL

Untitled

TRANSISTOR BC 413

Untitled

Untitled

TOP414G

PI-2216-120198

transistor BF 414

WLFT 404

Untitled

Untitled

TRANSISTOR BC 413

1BW TRANSISTOR

ELTEC INSTRUMENTS

BC413

BF414

bc 471

bc 945

2N6517 npn

230Z