schalenkern siemens k1
Abstract: 4900 SIEMENS Schalenkern B65651-D630-K26 Schalenkerne smd n48 STYROFLEX p14x8 siemens B65541-T400-A48 B65512A3001X17
Text: P-Kerne Schalenkerne Allgemeines Allgemeines S + M Components liefert eine breite Palette von Schalenkerngrößen, genannt P-Kerne (Pot Cores), darunter 8 Bauformen gemäß IEC 133 und DIN 41293. Die Kerne werden aus verschiedenen SIFERRIT-Werkstoffen gefertigt und können dementsprechend vielfältig und bis über 100 MHz
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B63399-B5
FRAME4/u/intranet/dtp4/SMC-CD/FER/P36x22
B65679-E2-X101
B65679-E3-X22
B65679-E2-X22
B65679-E1-X22
schalenkern siemens k1
4900 SIEMENS
Schalenkern
B65651-D630-K26
Schalenkerne
smd n48
STYROFLEX
p14x8 siemens
B65541-T400-A48
B65512A3001X17
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2SJ192
Abstract: EN3765
Text: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
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EN3765
2SJ192
2083B
2SJ192]
2092B
2SJ192
EN3765
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siemens ferrite n22 p14
Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Text: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches
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1794-VHSC
Abstract: 1794-PS13 Allen-Bradley 1794-irt8 manual Allen-Bradley 1794-irt8 1794-IRT8 specification 1794-TB3G WIRING DIAGRAM 1794-IRT8 1794-IE8 Allen-Bradley 1794-of4i manual Allen-Bradley 1794-ie8 manual
Text: Technical Data FLEX I/O and FLEX Integra 1794 Series and 1793 Series Flexible, Inexpensive, / ; ,270 DQG )/(; ,QWHJUD70 DUH IOH[LEOH ORZFRVW PRGXODU ,2 V\VWHPV and Compact IRU GLVWULEXWHG DSSOLFDWLRQV WKDW RIIHU DOO WKH IXQFWLRQV RI ODUJHU UDFNEDVHG ,
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QWHJUD70
1794-VHSC
1794-PS13
Allen-Bradley 1794-irt8 manual
Allen-Bradley 1794-irt8
1794-IRT8 specification
1794-TB3G WIRING DIAGRAM
1794-IRT8
1794-IE8
Allen-Bradley 1794-of4i manual
Allen-Bradley 1794-ie8 manual
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2SK1414
Abstract: No abstract text available
Text: Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . unit:mm 2077A
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EN4230
2SK1414
2SK1414]
2SK1414
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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2SK1413
Abstract: No abstract text available
Text: Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.
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EN4229
2SK1413
2076B
2SK1413]
2SK1413
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ Ml rights ristrni 2 3 4 5 6 A TI 1 12 86 96 Di c h t u n g / sea/ Montageausschn i1 1 / p a n e! c u t o ut C^l 73 86 n\ y M l Diiensions in n Original Size DIN A 4 Dat. 413277 1 0 .1 0 .0 7 R u l l 412937 2 4 .0 5 .0 7 24782 3 0 .0 9 .9 8 PL
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ hll rights resernd 5 4 3 '/ All Diiensions in m Original Size DIN A A 2 A Dat. 412934 2 2 . 0 5 . 0 7 DY 411606 0 2 . 0 8 . 0 5 DY Detail. 2 8 . 0 9 . 0 0 Insp. 2 8 . 0 9 . 0 0 411057 2 7 .0 5 .0 4 Bor Stand. 29285 0 5 .0 4 .0 1 28297
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D-32339
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ M l rights reserrei 5 4 1 3 D X ohne U b e r w u r f m u t t e r und D i c h t e i n s a t z B without screw cap and sealing All Diiensions in h Original Size DIN A A Techn. Character. Dat. A EC01883 17.05.10 DY 412934 22.05.07 DY
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalfen/ till rights resernd 5 4 3 2 1 X ohne U b e r w u r f m u t t e r und D i c h t e i n s a t z B without screw cap and sealing v \ All Diiensions in m Original Size DIN A A Techn. Character. Dat. E C 0 1 8 8 3 1 7 . 0 5 . 1 0 DY A 412934
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D-32339
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Untitled
Abstract: No abstract text available
Text: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C
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2SJ226
41293YK
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Untitled
Abstract: No abstract text available
Text: 2SK1419 2063 AP A d v a n ce d P e rfo rm a n c e Series Voss= 6 0 V N Channel Power M OSFET F eatures • Low ON resistance. • Very high-speed switching. • Converters. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C
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2SK1419
10//S,
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2SK1414
Abstract: ir 9637
Text: Ordering num ber: EN 4 2 3 0 _ 2SK1414 No.4230 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F e a tu r e s - Low ON resistance, low input capacitance, very high-speed switching. • H igh reliability Adoption of H VP process .
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2SK1414
ir 9637
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Untitled
Abstract: No abstract text available
Text: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 DIST 50 AF RIGHTS RESERVED. REVISIONS P F ZONE LTR 6 D THIS PART 1. j 2 . ^ 7 2 - L T DESCRIPTION
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27/SEP/95
1471-fi
27-5EP-95
22/dw
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Untitled
Abstract: No abstract text available
Text: ÂRK"LES CORPORATION DEPI i 1 2 3 4 5 6 7 8 9 10 PART NAME: TERMINAL, C U ST O M E R DR AW I N G W A T E R T O W N ,MA PARI NO: FEMA LE 3 0 0 0 H 2 I 4A / - 7 - 2 1 MATERIAL FINISH 3 0 0 0 H 2 14 A-7-2 .016 ±.001 TH'K BRASS C 2 6 0 0 0 , 3/4 H A R D PRETINNED
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10-29-B5
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2092A
Abstract: No abstract text available
Text: 2SJ192 2083A LD L o w D rive S eries V Dss=60V 2092A P Channel Power M OSFET Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SJ192
41293TH
2092A
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DS-16 SANYO
Abstract: 2SJ226
Text: Ordering num ber:EN3811 No.3811 _ 2SJ226 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive, • Its height onboard is 9.5mm. - Meets radial taping.
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EN3811
2SJ226
10//S,
100//A
DS-16 SANYO
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2SJ193
Abstract: 41293TH 37662
Text: Ordering number: EN3766 _ 2SJ193 N o.3766 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. A b s o lu te M ax im u m R a tin g s at T a=25°C
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EN3766
2SJ193
250mm2
41293TH
37662
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2SK1467
Abstract: No abstract text available
Text: Ordering num ber:EN35Ö8A 2SR1467 N0.35O8A N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b so lu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage
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EN3508A
35O8A
2SK1467
250mm2
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Untitled
Abstract: No abstract text available
Text: 2SK1467 m LD L o w D riv e S e rie s V DSs = 3 0 V 2062 N Channel Power M OSFET 3 50 8A F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage
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2SK1467
250mm2X
41293TH
/7190MH
X-6948
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2SK1311
Abstract: No abstract text available
Text: 2SK1311 2062 LD L o w D rive S eries V d ss = 6 0 V N Channel Power M OSFET F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage Vdss G ate to Source Voltage
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2SK1311
250mm2X
X-6380
2SK1311
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Untitled
Abstract: No abstract text available
Text: 2SK1414 207 7 U H U l t r a h i g h V o l t a g e S e r ie s V DSs = 1 5 0 0 V N Channel Power M OSFET £4230 F eatures • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C
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2SK1414
10/iS,
10//S
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Untitled
Abstract: No abstract text available
Text: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage
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2SJ194
41293TH
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