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    4101 TRANSISTOR Search Results

    4101 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4101 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HXTR4101

    Abstract: HXTR-4101 30ma 40v npn NPN rf transistor RF TRANSISTOR 1.5 GHZ
    Text: HXTR 4101 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION: The HXTR4101 is a Common Base Device Designed for Oscillator Applications up to 10 GHz. MAXIMUM RATINGS IC 70 mA VEBO 1.5 V VCEO 20 V TJ 300 °C TSTG -65 °C to 250 °C PT 900 mW @ TC = 25 °C


    Original     		PDF HXTR4101 HXTR-4101 30ma 40v npn NPN rf transistor RF TRANSISTOR 1.5 GHZ

    Untitled

    Abstract: No abstract text available
    Text: HXTR 4101 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION: The HXTR4101 is a Common Base Device Designed for Oscillator Applications up to 10 GHz. MAXIMUM RATINGS IC 70 mA VEBO 1.5 V VCEO 20 V TJ 300 C TSTG -65 C to 250 C PT 900 mW @ TC = 25 C O O O O


    Original     		PDF HXTR4101

    IHLP-1616BZ-ER-R47-M-01

    Abstract: IHLP1616BZER1R0M01 EEEFK1A151P IHLP1616BZERR47M01 GRM188R71C104K MAX15022
    Text: 19-4101; Rev 0; 5/08 MAX15022 Evaluation Kit The MAX15022 evaluation kit EV kit circuit demonstrates the MAX15022 IC, which integrates two highperformance PWM switching step-down regulators and two low-dropout (LDO) controllers. Each controller and regulator features independent enable controls for


    Original     		PDF MAX15022 MAX15022 IHLP-1616BZ-ER-R47-M-01 IHLP1616BZER1R0M01 EEEFK1A151P IHLP1616BZERR47M01 GRM188R71C104K

    LINFINITY LX8383A

    Abstract: 3845b power supply 3845b 2842ad8 intel 965 motherboard circuit diagram UC2843D CS830 uc3842 switching power supply with 3843b IRF6345
    Text: Automotive Products Guide INSTRUMENTATION - GAUGE DRIVERS GAUGES DRIVEN PART NUMBER MAJOR CS-289 1 CS-3750 1 CS-4101 1 CS-4102 1 CS-4121 1 CS-4172 1 CS-8190 1 CS-8191 1 INPUT MINOR FREQ. PWM SPI CURRENT • DRIVE METHOD 20 mA • • • 2 FEATURES OUTPUT


    Original     		PDF CS-289 CS-4121 CS-4172 CS-8190 CS-8191 CS-4102 CS-4101 CS-3750 CS-8442 CS-8441 LINFINITY LX8383A 3845b power supply 3845b 2842ad8 intel 965 motherboard circuit diagram UC2843D CS830 uc3842 switching power supply with 3843b IRF6345

    NCP18XH103D03RB

    Abstract: NCP18WF104D ncp18wf104f12rb NCP18XQ102p03RB NCP18WB473D ncp18wf104d03rb
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF NCP18WM474p03RB NCP18XH103D03RB NCP18WF104D ncp18wf104f12rb NCP18XQ102p03RB NCP18WB473D ncp18wf104d03rb

    NCP15WF104D03RC

    Abstract: 4557 ic IC 4614 NCP15XH103D03RC 4582 transistor 4557 transistor C 3998 NCP15WB473D03RC murata ntc 47k ohm 3950 thermistor 100K
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF

    NTC 100K 3950

    Abstract: No abstract text available
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF NCP18WF104p03RB NCP18WM154p03RB NCP18WM224p03RB NCP18WM474p03RB NTC 100K 3950

    Untitled

    Abstract: No abstract text available
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF NCP15WM154p03RC NCP15WM224p03RC NCP15WM474p03RC

    2C918HV

    Abstract: chip die npn transistor
    Text: MOTOROM Orderthis document by 2C818HVD SEMICONDUCTOR TECHNICAL DATA e 2C918HV Chip NPN Silicon Smal14ignal Transistor ,. .deeigned for VHF operation .11 in tuned amptifier/oscillator applications. ● SmalHgnal Power Gain — 15 dB Min @ 200 MHz . Noise Figure — 6.0 dB Max@ 60MHz


    Original     		PDF 2C818HVD 2C918HV Smal14ignal 60MHz 10x15 10aim 2C91W/D chip die npn transistor

    2N2219A MOTOROLA

    Abstract: 2N2219A 2N2219AJAN 4101 transistor
    Text: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039


    Original     		PDF 2N2219AJANID 2N2219AJAN, T0205AD 2N22d9A 2N2219AJAN/D 2N2219A MOTOROLA 2N2219A 2N2219AJAN 4101 transistor

    2C2605HV

    Abstract: raon
    Text: MOTOROU . Orderthis document by 202605HVID SEMICONDUCTOR TECHNICAL DATA @ 2C2605HV Chi~ PNP Silicon Low+oise Amplifier Transistor . . .deaigned for hig~ain, ● Iowoise ,111, ,11 ,11 a ~ amplfier applications. N.F-= 5.0 dB @ 100 H, “3.0 dB @ 10 kHz MAXIMUM RATINGS


    Original     		PDF 202605HVID 2C2605HV raon

    NCP21XV103J03RA

    Abstract: NCP21WF104J03RA NCP21WB473J03RA NCP21XM472J03RA NTC thermistor 10k ohm b 3950 NTC thermistor 100k ohm b 3950 3539 transistor Sensor NTC 10K NTC 220 ohm transistor 1012
    Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please


    Original     		PDF NCP03 NCP15 NCP18 NCP21 NCP21XV103J03RA NCP21WF104J03RA NCP21WB473J03RA NCP21XM472J03RA NTC thermistor 10k ohm b 3950 NTC thermistor 100k ohm b 3950 3539 transistor Sensor NTC 10K NTC 220 ohm transistor 1012

    2C2484HV

    Abstract: No abstract text available
    Text: MOTOROU Order this document by 2C2WHV/D SEMICONDUCTOR TECHNICAL DATA o *,\ Y,+* ,., ‘ ., $ . , ,. t?,~ , .:;: ,11 ,:‘‘>,:R’ IllIlk J L 2C2484HV Chip NPN Silicon Small-ignal Transistor .designed for hig~ain, Iowoiee amptifierapplications. p o


    Original     		PDF 2C2484HV 10kHz 2C2484HV Box2091~ ArizonaS502S. K145BP

    ME0412

    Abstract: ME0411 ME4102 ME0413 ME4101 transistor 4103 ME4103
    Text: ME 4101 ' ME 4102 • ME 4103 SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES MECHANICAL OUTLINE APPLICATIONS TO-92F • High G ain h frg . 1 0 0 - 6 0 0 @ lm A • Low Noise Pre-am plifier


    OCR Scan     		PDF ME4101 ME4102 ME4103 60Vmin ME0411 ME0412 ME0413 200mW 425mW 20MHz ME4102 ME4101 transistor 4103

    4311 mosfet transistor

    Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
    Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.


    OCR Scan     		PDF 2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072

    smd transistor 2f

    Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
    Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.


    OCR Scan     		PDF Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z

    etd 41

    Abstract: 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 BUF41 NPN Transistor 10A 400V OA41
    Text: 7 q g q g 3 7 £ fl D o g a s i SGS-THOMSON i Li lf^(S llD(gi S A 3 BUF410/410I BUF410A/410AI S-THOMSON 3GE » FASTSWITCH EASY-TO-DRIVE (ETD) NPN TRANSISTORS PRELIMINARY DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTOR ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­


    OCR Scan     		PDF BUF410/41 BUF41 OA/41 100KHz 10OKHz BUF410/410I BUF410A/410AI etd 41 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 NPN Transistor 10A 400V OA41

    ME0412

    Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103
    Text: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V


    OCR Scan     		PDF 60Vmin ME0411 ME0412 ME0413 200mW 425mW 8822 TRANSISTOR ME0413 20MHZ 4102 transistor ME4103

    SMD T26

    Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
    Text: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r


    OCR Scan     		PDF AX057 AX078 AX057 SMD T26 S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N63CL Internally Clam ped N-Channel IGBT This Logic Level Insulated G ate B ipolar Transistor IGBT features G ate-E m itter E S D protection, G ate Collector O v e rVoltage Protection from monolithic circuitry for usage as an Ignition


    OCR Scan     		PDF MGP20N63CL 21A-09 O-220AB

    CEP7030L

    Abstract: b703 CEB7030L B7030 p7030l
    Text: JU N 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 6 5 A , Rds on>= 8m Q D @ V gs =10V. Rd s(o n = 12itiQ @ V gs =4.5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.


    OCR Scan     		PDF TQ-220 O-263 to-263 t0-220 CEP7030L/CEB7030L CEP7030L b703 CEB7030L B7030 p7030l

    SMP20N20

    Abstract: No abstract text available
    Text: SMP20N20 CfSiEcanix J -m in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) (V) ( ii) Id (A) 200 0.16 20 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25 C Unless Otherwise Noted)


    OCR Scan     		PDF SMP20N20 O-22QAB 10peration SMP20N20

    ME0412

    Abstract: ME0413 ME0411
    Text: M E4101 • ME4102 • ME4103 M SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO FEATURES • H ig h G a i n M ECH AN ICAL O UTLINE APPLICATIO NS h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y


    OCR Scan     		PDF E4101 ME4102 ME4103 O-92F E0411 ME0412 ME0413 Rt30181-6, 8y82M- ME0413 ME0411

    p-channel 250V 30A power mosfet

    Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
    Text: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .


    OCR Scan     		PDF -200V, p-channel 250V 30A power mosfet p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260